Skip to Main content Skip to Navigation
Theses

Préparation de surfaces structurées et reprise d'épitaxie par jets moléculaires. Réalisation de micro et nanostructures sur GaAs

Abstract : Surface patterning and epitaxial regrowth are key technologies for novel optoelectronic (nano) devices. The aim of this thesis has been to develop a preparation of GaAs micro- and nanopatterned surfaces suited for regrowth and to study the organization of InAs quantum dots on these surfaces. The patterns have been achieved by electronic lithography in a cap resist and transferred into GaAs by chemical etching. Surface decontamination by a O2: SF6 micro-wave plasma has been demonstrated. Roughening upon in situ deoxidization has been prevented thanks to a low temperature H plasma treatment. Molecular beam epitaxy on these patterned surfaces has been studied. InAs quantum dots have been grown and lateral ordering has been attained. This preparation method has been shown to be efficient for GaAs selective regrowth on Si3N4/GaAs patterned surfaces.
Complete list of metadatas

Cited literature [66 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-00309826
Contributor : Arlette Evrard <>
Submitted on : Thursday, August 7, 2008 - 1:35:44 PM
Last modification on : Friday, January 10, 2020 - 9:08:07 PM
Long-term archiving on: : Thursday, June 3, 2010 - 6:02:50 PM

Identifiers

  • HAL Id : tel-00309826, version 1

Citation

Olivier Desplats. Préparation de surfaces structurées et reprise d'épitaxie par jets moléculaires. Réalisation de micro et nanostructures sur GaAs. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2008. Français. ⟨tel-00309826⟩

Share

Metrics

Record views

413

Files downloads

1638