Skip to Main content Skip to Navigation
Theses

Dispositifs semiconducteurs en pompage électrique pour laser en cavité verticale externe émettant à 1,55 µm

Abstract : The subject of this PHD work is the realisation of an InP based semiconductor devices for electrically pumped vertical-extarnal cavity surface-emitting lasers (VECSEL) operating at a wavelength of 1.55 μm. We have developped in this work a new electrically pumped semiconductor devices with large emission diameters (up to 50μm). We have tested ion implanted and burried tunnel junction as two confinement scheme for electrical injection. We have obesved the fist time in our knowlege a laser emission in continous wave at room temperature. We have tested two kinds of cavity lenght, a short cavity configuration with single longitudinal tunneled emission over 15 nm and a long cavity configuration with external miroir wih radius of curvature of 10 mm with a maximum output power close to 0.5 mW at room temperature in continous wave operation. Increasing of output power can be achieved by a better control of the thermal effect in the structure.
Document type :
Theses
Complete list of metadatas

https://tel.archives-ouvertes.fr/tel-00287689
Contributor : Adel Bousseksou <>
Submitted on : Thursday, June 12, 2008 - 2:57:15 PM
Last modification on : Thursday, January 11, 2018 - 6:14:36 AM
Long-term archiving on: : Friday, November 25, 2016 - 9:27:11 PM

Identifiers

  • HAL Id : tel-00287689, version 1

Collections

Citation

Adel Bousseksou. Dispositifs semiconducteurs en pompage électrique pour laser en cavité verticale externe émettant à 1,55 µm. Physique [physics]. Université Paris Sud - Paris XI, 2007. Français. ⟨tel-00287689⟩

Share

Metrics

Record views

308

Files downloads

1497