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Caractérisations et fiabilité de mémoires magnétiques à accès aléatoires (MRAM)

Abstract : The magnetic random access memories (or MRAM) are now entering the phase of mass production. This thesis aims at the evaluation and the characterization of the potential problems of reliability due to the introduction of the magnetic part into the MRAM memories.
First, I describe in detail the physical principles, both electric and magnetic, of the magnetic tunnel junctions which are the crucial component of magnetic memories. I identify at each stage the new factors likely to influence the reliability (compared to a traditional CMOS process), while giving a quantitative evaluation of their possible impact.
Along this line, I established and tested a process to characterize a critical feature of the MRAM, its non-volatility, which can then be used on isolated elements from a wafer in order to check the magnetic quality of the circuit. We chose to compare calculations of the energy barrier with real measurements of the barrier on samples provided by the Alliance Crolles 2.
Finally, I undertook a study on another type of structure of magnetic memories utilizing the motion of magnetic domain walls using a current. This study also aimed at estimating the energy barrier of these new structures. We showed that they would be an interesting alternative to the miniaturization of magnetic memories.
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Contributor : Elsa Nicolle <>
Submitted on : Thursday, May 15, 2008 - 5:28:39 PM
Last modification on : Wednesday, October 14, 2020 - 3:57:09 AM
Long-term archiving on: : Friday, November 25, 2016 - 9:56:35 PM


  • HAL Id : tel-00279958, version 1



Elsa Nicolle. Caractérisations et fiabilité de mémoires magnétiques à accès aléatoires (MRAM). Physique [physics]. Université Paris Sud - Paris XI, 2008. Français. ⟨tel-00279958⟩



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