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Réalisation de structures silicium-sur-isolant partielles pour applications aux circuits de puissance

Abstract : SOI identifies a “silicon substrate / insulating film / thin silicon layer” structure. A lot of studies have been made since the 70's to obtain that kind of structures. The LEGO process is based on fusion and recrystallization of thick poly-silicon patterns on oxide, and provides localized SOI patterns on a silicon substrate. It has first been developed by G. Celler and al. in the 80's and is being reconsidered today because of new market demand for low cost partial SOI: the coexistence of control and power devices on the same chip for mixed power integration and with efficient electrical insulation.
Following an overview of the existing techniques for the fabrication of SOI wafers, this thesis describes the LEGO process and the different optimizations that were performed to obtain monocrystalline SOI patterns up to 2mm². Then, we will present the fabrication of MOS devices on partial SOI substrates, and we will demonstrate that this LEGO process is compatible with completely functionnal devices showing the same electrical performances than on bulk silicon substrate. Finally, we will conclude on the possible applications of this process.
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Submitted on : Thursday, February 7, 2008 - 2:17:20 PM
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  • HAL Id : tel-00245808, version 1

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Isabelle Bertrand. Réalisation de structures silicium-sur-isolant partielles pour applications aux circuits de puissance. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2006. Français. ⟨tel-00245808⟩

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