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MAGNETORESISTANCE ET TRANSFERT DE SPIN DANS LES JONCTIONS TUNNEL MAGNETIQUES

Abstract : The recent observation of current-induced magnetization switching (CIMS) in magnetic tunnel junctions (MTJs) has opened new possibilities of applications for spin electronics, especially with magnetic memories (MRAM). This achievement demands the accurate control of the barrier oxidation in order to obtain MTJs with good magnetic and electronic properties. Moreover, spin transfer torque is expected to show different characteristics in MTJ compared to metallic spin valves.
In a first step, an experimental study of the influence of oxygen on the magnetic properties of a Pt/Co/MOx trilayers (MOx is an oxidized metal) is presented. These modifications may be used as a probe of the oxidation state of the tunnel barrier. In a second step, we study the specific properties of spin transfer torque in a MTJ. These properties are first described within a free electron model and then estimated experimentally in MgO-based MTJ through the measurement of static phase diagrams.
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https://tel.archives-ouvertes.fr/tel-00203385
Contributor : Aurélien Manchon <>
Submitted on : Wednesday, January 9, 2008 - 6:24:53 PM
Last modification on : Thursday, July 16, 2020 - 2:28:02 PM
Document(s) archivé(s) le : Thursday, September 27, 2012 - 2:01:01 PM

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  • HAL Id : tel-00203385, version 1

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Aurélien Manchon. MAGNETORESISTANCE ET TRANSFERT DE SPIN DANS LES JONCTIONS TUNNEL MAGNETIQUES. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨tel-00203385⟩

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