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« Etude et Réalisation de jonctions p/n en diamant »

Abstract : In order to achieve single crystalline {111} diamond p/n junction, studies of Ib diamond substrate, n-type and p-type CVD diamond epilayers were carried out.
Surface and internal defects of the diamond bulk substrates were optically studied using Nomarski microscope, AFM and X-Ray measurements. In particular, the polishing defects of the diamond substrate were shown to be able to damage the crystalline quality of the CVD films.
A Reactive Ion Etching pre-treatment of the substrate surface was performed before the growth in order to remove the defects induced by mechanical polishing. Sets of phosphorus-doped samples simultaneously grown on substrates without and with RIE pre-treatment were optically analysed and characterized using cathodoluminescence and Hall Effect measurements. The positive effect of the substrate surface etching on the optical and electrical quality of diamond layers was proved with the decrease of Band A emission related to dislocations and the increase of the low field Hall mobility for the pre-treated sample. Experimental data of the electron mobility were compared with theoretical calculations based on the relaxation time approximation allowing us to determine the impurities and phonon scattering mechanisms and the acoustic deformation potential of diamond close to 17.7 eV. The maximum value of the Hall mobility achievable at thermodynamical equilibrium in n-type diamond was determined. A temperature dependence of a new scattering was proposed for the untreated sample.
The crystalline, optical and electronic properties of CVD {111} diamond thin films with boron ranging from 8x1015 cm-3 to 3x1021 cm-3 were studied as a function of boron incorporation measured by SIMS.
Finally, two diamond p/n junctions, one deposited on heavy boron-doped substrate, the other grown upon an insulating RIE pre-treated substrate were prepared. I(V), cathodoluminescence, electroluminescence and EBIC measurements of each diamond diode were carried out, compared and discussed.
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Contributor : Céline Tavares <>
Submitted on : Thursday, January 3, 2008 - 11:17:13 AM
Last modification on : Friday, December 18, 2020 - 1:34:03 PM
Long-term archiving on: : Friday, November 25, 2016 - 7:52:22 PM

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  • HAL Id : tel-00201822, version 1

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CNRS | UJF | UGA

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Céline Tavares. « Etude et Réalisation de jonctions p/n en diamant ». Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2006. Français. ⟨tel-00201822⟩

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