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Epitaxies Si/SiGe(C) pour transistors bipolaires avancés

Abstract : The objective of this thesis is to study SiGe(C) epitaxial growth selective towards silicon nitride. Selective Epitaxial Growth (SEG) allows to improve frequence performances of heterojunction bipolar transistors, with fully self aligned structure. With this purpose, the SiH4/GeH4/SiH3CH3/HCl/B2H6/H2 system is used to elaborate selective epitaxial growth layer.
Si SEG and SiGe SEG growth rates are significantly increased with silane-based chemistry, as compared to the standard SiCl2H2/GeH4/HCl/H2 one. For instance, Si0,75Ge0,25 layer growth rate can be increased by a factor 8.
Carbon incorporation in substitutional sites is also improved by this growth rate increase. Indeed, using silane, the substitutional carbon content hugely increased (up to a factor 4). We found better carbon blocking effect on boron diffusion. Better carbon atoms incorporation improves electrical results. There is no IB current degradation with higher carbon concentrations, which means that there is no recombination centers in base electrode. IC current and fT frequence increase too, which suggest neutral base width is narrower and boron out-diffusion is lower.
We noted that recombination mechanisms of IB current and photoluminescence at room temperature are similar and that base current can be correlated with photoluminescence intensity. Indeed, we show that IB current increases when photoluminescence signal decreases.
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Contributor : Florence Brossard <>
Submitted on : Thursday, December 20, 2007 - 11:56:50 AM
Last modification on : Tuesday, February 16, 2021 - 3:33:37 AM
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Florence Brossard. Epitaxies Si/SiGe(C) pour transistors bipolaires avancés. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨tel-00200095⟩

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