W. Liu, S. Nelson, D. G. Hill, and A. Khatibzadeh, Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities, IEEE Transactions on Electron Devices, vol.40, issue.11, pp.1917-1927, 1993.
DOI : 10.1109/16.239729

W. Liu, A. Khatibzadeh, J. Sweder, and H. F. Chau, The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors, IEEE Transactions on Electron Devices, vol.43, issue.2, pp.245-251, 1996.
DOI : 10.1109/16.481724

P. Tseng, L. Zhang, G. B. Gao, and M. F. Chang, A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications, IEEE Journal of Solid-State Circuits, vol.35, issue.9, pp.1338-1334, 2000.
DOI : 10.1109/4.868045

J. Trichet, Power Control Solutions Comparison". Présentation interne Motorola, 2003.

G. Trauth, V. Vanhuffel, and J. Trichet, An advanced controller for multi-band open loop power control mode RF power amplifier, Microwave Engineering, pp.39-40, 2002.

A. Inoue, S. Nakatsuka, S. Suzuki, K. Yamamoto, T. Shimura et al., Direct measurement of the maximum operating region in GaAs HBTs for RF power amplifiers, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), pp.1687-1690, 2001.
DOI : 10.1109/MWSYM.2001.967230

T. Johanson, RF Power Transistor United States Patent, 2002.

A. Inoue, S. Nakatsuka, R. Hattori, and Y. Matsuda, The maximum operating region in SiGe HBTs for RF power amplifiers, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), pp.1023-1026, 2002.
DOI : 10.1109/MWSYM.2002.1011805

S. Heckmann, J. M. Nébus, R. Quéré, J. C. Jacquet, D. Floriot et al., Measurement and modelling of Static and Dynamic Breakdowns of Power GaInP/GaAs HBT's, IEEE MTT-S Digest, pp.1001-1004, 2002.

J. B. Johnson, A. J. Joseph, D. C. Sheridan, R. M. Maladi, P. Brandt et al., Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications, IEEE Journal of Solid-State Circuits, vol.39, issue.10, pp.1605-1614, 2004.
DOI : 10.1109/JSSC.2004.833570

J. F. Imbornone, M. Murphy, R. S. Donahue, and E. Heaney, New insight into subharmonic oscillation mode of GaAs power amplifiers under severe output mismatch condition, IEEE Journal of Solid-State Circuits, vol.32, issue.9, pp.1319-1325, 1997.
DOI : 10.1109/4.628734

J. F. Imbornone, M. Murphy, R. S. Donahue, and E. Heaney, New Insight into Subharmonic Oscillation Mode of GaAs Power Amplifiers Under Severe Output Mismatch Condition, IEEE GaAs IC Symposium, pp.307-310, 1996.

L. Carbonini and A. Manara, A procedure to evaluate the output VSWR of high power amplifiers, 1998 IEEE EMC Symposium. International Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.98CH36253), pp.241-244, 1998.
DOI : 10.1109/ISEMC.1998.750093

J. B. Johnson, A. J. Joseph, D. Sheridan, and R. M. Malladi, SiGe BiCMOS technologies for power amplifier applications, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003., pp.179-182, 2003.
DOI : 10.1109/GAAS.2003.1252389

A. J. Joseph, J. Dunn, G. Freeman, and D. L. Harame, Product applications and technology directions with SiGe BiCMOS, IEEE Journal of Solid-State Circuits, vol.38, issue.9, pp.1471-1478, 2003.
DOI : 10.1109/JSSC.2003.815930

S. Augaudy, Caractérisation et modélisation des transistors Microondes, Application à l'étude de la linéarité des amplificateurs à fort rendement, thèse de Doctorat, 2002.

T. Niwa, T. Ishigaki, H. Shimawaki, and Y. Nashimoto, A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers, IEEE MTT-S International Microwave Symposium Digest, 2003, pp.711-714, 2003.
DOI : 10.1109/MWSYM.2003.1212471

Y. J. Chen, C. Wang, T. C. Tsai, S. M. , and J. Liu, Heterojunction Bipolar Transistor Power Transistor", United States Patent, Patent Number: 0099879A1, 2004.

T. R. Apel, J. E. Bonkowski, and P. H. Litzenberg, Power Amplifier Mismatch Protection With Clamping Diodes in RF Feedback Circuit, 2002.

C. R. Jackson and D. R. Burke, VSWR Adaptive Power Amplifier System, United States Patent, 1992.

D. Hill, RF Amplifier and Method Therefore", United States Patent, Patent Number: 0038680 A1, 2003.

S. Suzuki, K. Yamamoto, T. Asada, K. Choumei, A. Inoue et al., A New Approach To Prevent the Burnout Under Mismatching Load Conditions, High Power HBT", 29 th European Microwave Conference, pp.117-120, 1999.

K. Yamamoto, S. Suzuki, K. Mori, T. Asada, T. Okuda et al., A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique, IEEE Journal of Solid-State Circuits, vol.35, issue.8, pp.8-1109, 2000.
DOI : 10.1109/4.859499
URL : https://hal.archives-ouvertes.fr/in2p3-00420531

K. Yamamoto, A. Inoue, S. Suzuki, and T. Asada, Power Amplifier, United States Patent, 2001.

P. Antognetti, J. Griffiths, D. Helms, J. Moniz, S. Munro et al., Active Bias Network Circuit for Radio Frequency Amplifier, 2002.

J. R. King, High VSWR Mismatch Output Stage ", United States Patent, 2000.

D. C. Dening and K. Muhonen, Power Amplifier Protection, 2003.

T. W. Arell, H. Lewinski, J. M. Lott, and O. J. Lopez, Active Clamping Circuit for Power Amplifiers, 2003.

J. C. Arnott, Power Amplifier Overload Protection", United States Patent, Patent Number: 0045251 A1, 2003.

D. Dening and K. Muhonen, Power Amplifier Protection Circuit", United States Patent, 2004.

D. Hill, Circuit Approaches for Improved PA Ruggedness", présentation interne Motorola, 2003.

V. Vanhuffel, HBT Mismatch Protection Circuit, Rapport interne Motorola, 2002.

D. P. Prikhodko, A. G. Van-zuijlen, and N. Kramer, RF Power Amplifier Circuit, pp.87626-87627, 2003.

A. Scuderi, F. Carrara, A. Alessandro, and G. Palmisano, A high performance RF power amplifier with protection against load mismatches, IEEE MTT-S International Microwave Symposium Digest, 2003, pp.699-702, 2003.
DOI : 10.1109/MWSYM.2003.1212468

P. Dicarlo, S. Boerman, R. Burton, H. C. Chung, D. Evans et al., A highly integrated quad-band GSM TX-front-end-module, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003., pp.280-283
DOI : 10.1109/GAAS.2003.1252411

E. Jarvinen, S. Kalajo, M. Matilainen, and I. Digest, Bias circuits for GaAs HBT power amplifiers, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), pp.507-510, 2001.
DOI : 10.1109/MWSYM.2001.966942

S. Augaudy, Caractérisation et modélisation des transistors Microondes, Application à l'étude de la linéarité des amplificateurs à fort rendement, thèse de Doctorat, 2002.

Y. S. Noh and C. S. Park, Linearized InGaP/GaAs HBT MMIC power amplifier with active bias circuit, Proceedings RAWCON 2001. 2001 IEEE Radio and Wireless Conference (Cat.No.01EX514), 2001.
DOI : 10.1109/RAWCON.2001.947639

J. Kim, J. H. Kim, Y. S. Noh, and C. S. Park, MMIC power amplifier adaptively linearized with RF coupled active bias circuit for W-CDMA mobile terminals applications, IEEE MTT-S International Microwave Symposium Digest, 2003, pp.2209-2212, 2003.
DOI : 10.1109/MWSYM.2003.1210603

A. Soury, Modélisation des phénomènes de mémoire à long terme des amplificateurs de puissance pour la simulation des systèmes de télécommunications, thèse de Doctorat, pp.39-2002, 2002.

N. and L. Gallou, Modélisation par séries de Volterra dynamiques des phénomènes de mémoire non linéaires pour la simulation système d'amplificateurs de puissance, thèse de Doctorat, pp.55-2001, 2001.

T. Gasseling, Caractérisation non linéaire avancée de transistors de puissance pour la validation de leur modèle CAO, thèse de Doctorat, pp.45-2003, 2003.

C. Wang, H. Hsu, H. Shu, Y. Liu, and Y. Hsin, Improved InGaP/GaAs HBTs AC Performance and Linearity with Collector Design, IEEE RFIC, pp.391-394, 2004.

C. Cassan, Etude des techniques de linéarisation d'amplificateurs pour stations de base radiocellulaires de troisième génération, thèse de Doctorat, 2002.

K. Cho, D. Jang, S. Kim, J. Kim, and S. P. Stapleton, An analog compensation method for asymmetric IMD characteristics of a power amplifier, IEEE MTT-S International Microwave Symposium Digest, 2003, p.4, 2004.
DOI : 10.1109/MWSYM.2003.1212617

M. Kwok-keung, C. Cheng, and . Leung, A Novel Generalized Low-Frequency Signal-Injection Method for Multistage Amplifier Linearization, IEEE Transactions on Microwave Theory and Techniques, vol.51, pp.2-553, 2003.

C. Fan, M. Kwok-keung, and . Cheng, Theoretical and Experimental Study of Amplifier Linearization Based on Harmonic and Baseband Signal Injection Technique, IEEE Transactions on Microwave Theory and Techniques, vol.50, pp.7-1801, 2002.

W. Jenkins and A. Khanifar, Linearization of power amplifiers through injection of low-frequency second-order products, Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573), pp.11-14, 2002.
DOI : 10.1109/RAWCON.2002.1030161

Y. Yang and B. Kim, A new linear amplifier using low-frequency second-order intermodulation component feedforwarding, IEEE Microwave and Guided Wave Letters, vol.9, issue.10, pp.10-419, 1999.
DOI : 10.1109/75.798035

C. Leung, M. Kwok-keung, and . Cheng, A New Approach to Amplifier Linearization by the Generalized Baseband Signal Injection Method, IEEE Microwave and Wireless Components Letters, vol.12, pp.9-336

B. Kim, J. Chn, and B. Shin, Doherty Amplifier Using Adaptive Bias Control, 2004.

N. Sasho and M. Abe, Power Amplifying Apparatus and radio Communications Apparatus Using Same, 2005.

S. Forestier, Gestion dynamique de la génération de puissance en hyperfréquence pour des modulations numériques : Application à l'optimisation des performances d'un amplificateur millimétrique, thèse de Doctorat, 2003.

F. Robin, C. Duvanaud, F. Huin, and R. Allam, Amélioration du rendement et de la linéarité des amplificateurs par le contrôle dynamique de la tension de polarisation de drain, 12 èmes Journées Nationales Microondes, 2001.

S. Dardenne, C. Duvanaud, and R. Allam, Effet de l'injection de composantes fréquentielles d'ordre 3 et basses fréquences pour un amplificateur à deux étages, 14 èmes Journées Nationales Microondes, 2005.

S. Dardenne, C. Duvanaud, F. Robin, F. Huin, J. Paillot et al., Cancellation of Third Order Intermodulation Currents in a two-stages Amplifier Topology, IEEE MTT-S Digest, pp.193-196, 2003.

B. Peter and . Kenington, High Linearity RF Amplifier Design, Artech House, 2000.

S. C. Cripps, RF power amplifiers for wireless communications, Artech House, 1999.
DOI : 10.1109/MMW.2000.823830

B. Aleiner, Correlation between P1dB and ACP in TDMA Power Amplifiers, Applied Microwave and Wireless, pp.82-94, 1999.

H. Ikeda, H. Kosugi, and T. Uwano, A low distortion and high efficiency paralleloperation power amplifier combined in different phases in wide range of load impedances, IEEE MTT-S Digest, pp.535-538, 1996.

A. Van-bezooijen, C. Chanlo, and A. H. Van-roermund, Adaptively preserving power amplifier linearity under antenna mismatch, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), pp.1515-1518
DOI : 10.1109/MWSYM.2004.1338865

F. Ellinger, R. Vogt, and W. Bächtold, Compact reflective-type phase-shifter MMIC for C-band using a lumped-element coupler, IEEE Transactions on Microwave Theory and Techniques, vol.49, issue.5, pp.913-917, 2001.
DOI : 10.1109/22.920148

D. Williams, J. Leckey, and P. J. Tasker, A study of the effect of envelope impedance on intermodulation asymmetry using a two-tone time domain measurement system, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), pp.1841-1844, 2002.
DOI : 10.1109/MWSYM.2002.1012221

F. Robin, Contrôle dynamique de la polarisation des transistors de puissance pour l'amplification linéaire et à haut rendement de signaux à enveloppe variable, thèse de Doctorat, 2003.

A. Stephen and . Maas, Nonlinear Microwave and RF Circuits, 2003.

W. Karoui, P. Riondet, T. Parra, and G. Montoriol, An adaptive protection circuit for power amplifier ruggedness improvement, RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits, pp.12-17, 2005.
DOI : 10.1109/RFIC.2005.1489834

W. Karoui, P. Riondet, G. Montoriol, and T. Parra, An adaptive protection circuit for a power amplifier, 2005.
DOI : 10.1109/rfic.2005.1489834

W. Karoui, P. Riondet, T. Parra, and G. Montoriol, Circuit de protection pour l'amélioration de la robustesse des amplificateurs de puissance radiofréquences à base de TBH GaAs, 14 ème Journées Nationales Microondes (JNM'2005), pp.11-13, 2005.

W. Karoui, P. Savary, R. Jaoui, and T. Parra, A Novel Linearizer for RF Power Amplifier, 2006.

W. Karoui, P. Savary, and T. Parra, Circuit de linéarisation à très basse consommation pour amplificateurs de puissance radiofréquences monolithiques à fort rendement et haute linéarité", 7 ème colloque sur le traitement analogique de l'information, du signal et de ses applications, pp.19-20, 2006.

W. Karoui, T. Parra, and P. Savary, Circuit de linéarisation basé sur l'injection d'un signal basse fréquence pour amplificateurs de puissance radiofréquences bi-modes et quadribandes pour téléphonie mobile, 15 ème Journées Nationales Microondes (JNM'2007, pp.23-25, 2007.