]. G. Moore, Cramming More Components Onto Integrated Circuits, Proceedings of the IEEE, vol.86, issue.1, p.114, 1965.
DOI : 10.1109/JPROC.1998.658762

. Sudraud, Purification and crystallization of tungsten wires fabricated by focused-ionbeam-induced deposition, Appl. Phys. Lett, vol.86, p.192112, 2005.

Y. Cui, X. Duan, J. Hu, and C. M. Lieber, Doping and Electrical Transport in Silicon Nanowires, The Journal of Physical Chemistry B, vol.104, issue.22, p.5213, 2000.
DOI : 10.1021/jp0009305

]. A. Houel, D. Tonneau, N. Bonnail, H. Dallaporta, and V. Safarov, Direct patterning of nanostructures by field-induced deposition from a scanning tunneling microscope tip, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.6
DOI : 10.1116/1.1520548

M. T. Cuberes, R. R. Schlittler, and J. K. Gimzewski, Manipulation of C 60 molecules on Cu(111) surfaces using a scanning tunneling microscope, Appl. Phys. A: Mat. Sc. and Proc. 66, p.669, 1998.
DOI : 10.1007/s003390051219

B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Fabrication of Ti/TiOx tunneling barriers by tapping mode atomic force microscopy induced local oxidation, Applied Physics Letters, vol.71, issue.12, p.1733, 1997.
DOI : 10.1063/1.120019

R. Rothuizen, R. Stutz, G. K. Widmer, and . Binnig, The 'Millipede'--More than one thousand tips for future AFM data storage, IBM J. Res. Dev, vol.44, issue.3, p.323, 2000.

M. I. Lutwyche, Highly parallel data storage system based on scanning probe arrays, Applied Physics Letters, vol.77, issue.20, p.3299, 2000.
DOI : 10.1063/1.1326486

]. J. Kavalieros, B. Doyle, S. Datta, G. Dewey, M. Doczy et al., http://public.itrs.net [13Tri-gate transistor architecture with high-k gate dielectrics, metal gates, and strain engineering, Introducing the 45nm Next Generation Intel® Core? Microarchitecture, p.62, 2006.

]. T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi et al., Ultimately thin double-gate SOI MOSFETs, IEEE Transactions on Electron Devices, vol.50, issue.3, p.830, 2003.
DOI : 10.1109/TED.2003.811371
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.464.463

]. R. Chau, Integrated CMOS Tri-Gate Transistors: Paving the Way to Future Technology Generations, p.1, 2006.

H. P. Wong, Beyond the conventional transistor, IBM Journal of Research and Development, vol.46, issue.2.3, p.133, 2002.
DOI : 10.1147/rd.462.0133

]. J. Kedzierski, High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), p.437, 2001.
DOI : 10.1109/IEDM.2001.979530

I. Zutic, J. Fabian, and S. D. Sharma, Spintronics: Fundamentals and applications

]. R. Dennard, Field-effect transistor memory, p.286, 1968.

]. D. Zhao, Y. Zhu, R. Li, and J. Liu, Transient processes in a Ge/Si hetero-nanocrystal p-channel memory, Solid-State Electronics, vol.50, issue.3, p.362, 2006.
DOI : 10.1016/j.sse.2006.01.008

]. G. Binning, H. Rohrer, C. Gerber, and E. , Surface Studies by Scanning Tunneling Microscopy, Physical Review Letters, vol.49, issue.1, p.57, 1982.
DOI : 10.1103/PhysRevLett.49.57

]. G. Binning, H. Rohrer, C. Gerber, and E. , 7 ?? 7 Reconstruction on Si(111) Resolved in Real Space, Physical Review Letters, vol.50, issue.2, p.120, 1983.
DOI : 10.1103/PhysRevLett.50.120

J. A. Strocio, R. M. Feentra, and A. P. Fein, Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface, Physical Review Letters, vol.58, issue.16, p.1668, 1987.
DOI : 10.1103/PhysRevLett.58.1668

]. R. Feentra, J. A. Strocio, J. Tersoff, and A. P. Fein, Atom-selective imaging of the GaAs(110) surface, Physical Review Letters, vol.58, issue.12, p.1192, 1987.
DOI : 10.1103/PhysRevLett.58.1192

G. Binning, C. F. Quate, and C. Gerber, Atomic Force Microscope, Physical Review Letters, vol.56, issue.9, p.930, 1986.
DOI : 10.1103/PhysRevLett.56.930

]. C. Barth and M. Reichling, Imaging the atomic arrangements on the high-temperature reconstructed ?-Al 2 O 3 (0001) surface, Nature, vol.414, issue.6859, p.54, 2001.
DOI : 10.1038/35102031

J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek et al., Modification of hydrogen???passivated silicon by a scanning tunneling microscope operating in air, Applied Physics Letters, vol.56, issue.20, p.2001, 1990.
DOI : 10.1063/1.102999

C. R. Marrian, E. A. Dobisz, and J. A. Dagata, Electron-beam lithography with the scanning tunneling microscope, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.6, p.2877, 1992.
DOI : 10.1116/1.585978

]. M. Ishibashi, S. Heike, H. Kajiyama, Y. Wada, and T. Hashizume, Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System, Japanese Journal of Applied Physics, vol.37, issue.Part 1, No. 3B
DOI : 10.1143/JJAP.37.1565

]. E. Snow, D. Park, and P. M. Campbell, Single???atom point contact devices fabricated with an atomic force microscope, Applied Physics Letters, vol.69, issue.2, p.269, 1996.
DOI : 10.1063/1.117946

]. B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Fabrication of Ti/TiO X tunneling barriers by tapping mode atomic force microscope induced local oxidation, Appl. Phys

E. S. Snow and P. M. Campbell, AFM Fabrication of Sub-10-Nanometer Metal-Oxide Devices with in Situ Control of Electrical Properties, Science, vol.270, issue.5242, p.1639, 1995.
DOI : 10.1126/science.270.5242.1639

]. J. Shirakashi, M. Ishii, K. Matsumoto, N. Miura, and M. Konagai, Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process, Japanese Journal of Applied Physics, vol.35, issue.Part 2, No. 11B
DOI : 10.1143/JJAP.35.L1524

E. S. Snow, P. M. Campbell, and F. K. Perkins, High speed patterning of a metal silicide using scanned probe lithography, Applied Physics Letters, vol.75, issue.10, p.1476, 1999.
DOI : 10.1063/1.124730

P. Avouris, T. Hertel, and R. Martel, Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication, Applied Physics Letters, vol.71, issue.2, p.285, 1997.
DOI : 10.1063/1.119521

P. M. Campbell, E. S. Snow, and P. J. Mcmarr, Fabrication of nanometer???scale side???gated silicon field effect transistors with an atomic force microscope, Applied Physics Letters, vol.66, issue.11, p.1388, 1995.
DOI : 10.1063/1.113210

E. S. Snow, W. H. Juan, S. W. Pang, and P. M. Campbell, Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclotron resonance source, Applied Physics Letters, vol.66, issue.14, p.1729, 1995.
DOI : 10.1063/1.113348

S. C. Minne, H. T. Soh, P. Flueckiger, and C. F. Quate, Fabrication of 0.1 ??m metal oxide semiconductor field???effect transistors with the atomic force microscope, Applied Physics Letters, vol.66, issue.6, p.703, 1995.
DOI : 10.1063/1.114105

J. W. Lyding, T. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln, Nanoscale patterning and oxidation of H???passivated Si(100)???2??1 surfaces with an ultrahigh vacuum scanning tunneling microscope, Applied Physics Letters, vol.64, issue.15, p.2010, 1994.
DOI : 10.1063/1.111722

G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Ideal hydrogen termination of the Si???(111) surface, Applied Physics Letters, vol.56, issue.7, p.656, 1990.
DOI : 10.1063/1.102728

]. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen, and L. Ley, Nanometer???scale field???induced oxidation of Si(111):H by a conducting???probe scanning force microscope: Doping dependence and kinetics, Applied Physics Letters, vol.67, issue.21, p.3144, 1995.
DOI : 10.1063/1.114861

R. Garcia, M. Calleja, and H. Rohrer, Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges, J. Appl

M. Calleja and R. Garcia, Nano-oxidation of silicon surfaces by noncontact atomic-force microscopy: Size dependence on voltage and pulse duration, Applied Physics Letters, vol.76, issue.23, p.3427, 2000.
DOI : 10.1063/1.126856

M. Bruel, Silicon on insulator material technology, Electronics Letters, vol.31, issue.14, pp.31-1201, 1995.
DOI : 10.1049/el:19950805

W. K. Chu, R. H. Kastl, R. F. Lever, S. Mader, and B. J. Masters, Radiation Damage of 50???250 keV Hydrogen Ions in Silicon, Ion Implantation in Semiconductors1976
DOI : 10.1007/978-1-4613-4196-3_51

J. H. Evans, An interbubble fracture mechanism of blister formation on helium-irradiated metals, Journal of Nuclear Materials, vol.68, issue.2, p.129, 1977.
DOI : 10.1016/0022-3115(77)90232-X

]. L. Palun, Etude prospective sur les dispositifs Silicium à Blocage de Coulomb dans une perspective d'application à la micro-électronique", thèse soutenue à l, 2000.

]. H. Jansen, H. Gardeniers, M. De-boer, M. Elwenspoek, and J. Fluitman, A survey on the reactive ion etching of silicon in microtechnology, Journal of Micromechanics and Microengineering, vol.6, issue.1, p.14, 1996.
DOI : 10.1088/0960-1317/6/1/002

V. Sparks, K. Dacosta, M. Ouandjela, and . Skvarla, The art of spin electronics, J. Man. Magn. Mater, vol.175, p.1, 1997.

I. Zutic, J. Fabian, and S. D. Sarma, A proposal for a spin-polarized solar battery, Appl. Phys

C. L. Dennis, C. Sirisathitkul, G. J. Ensell, J. F. Gregg, and S. M. Thompson, High current gain silicon-based spin transistor, Journal of Physics D: Applied Physics, vol.36, issue.2, p.81, 2003.
DOI : 10.1088/0022-3727/36/2/303
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.505.1752

]. C. Dennis, C. V. Tiusan, J. F. Gregg, G. J. Ensell, and S. M. Thompson, Silicon spin diffusion transistor: materials, physics and device characteristics, IEE Proceedings - Circuits, Devices and Systems, vol.152, issue.4, p.340, 2005.
DOI : 10.1049/ip-cds:20050008

J. Fabian, I. Zutic, and S. D. Sarma, Magnetic bipolar transistor, Applied Physics Letters, vol.84, issue.1, p.85, 2004.
DOI : 10.1063/1.1637954
URL : http://arxiv.org/abs/cond-mat/0307014

]. S. Alvarado and P. Renaud, Observation of spin-polarized-electron tunneling from a ferromagnet into GaAs, Physical Review Letters, vol.68, issue.9, p.1387, 1992.
DOI : 10.1103/PhysRevLett.68.1387

V. F. Motsnyi, P. Van-dorpe, W. Van-roy, E. Goovaerts, V. I. Safarov et al., Optical investigation of electrical spin injection into semiconductors, Physical Review B, vol.68, issue.24, p.245319, 2003.
DOI : 10.1103/PhysRevB.68.245319

. Schuhl, Spin-dependent transmission of electrons through the ferromagnetic metal base of a hot electron transistorlike system, phys. Rev. Lett, vol.80, p.2425, 1998.

D. Lépine, Spin Resonance of Localized and Delocalized Electrons in Phosphorus-Doped Silicon between 20 and 30 ??K, Physical Review B, vol.2, issue.7, p.2429, 1970.
DOI : 10.1103/PhysRevB.2.2429

S. Datta and B. Das, Electronic analog of the electro???optic modulator, Applied Physics Letters, vol.56, issue.7, p.665, 1990.
DOI : 10.1063/1.102730

E. I. Rashba, Properties of semiconductors with an extremum loop, I/ Cyclotron and combinational resonance in a magnetic field perpendicular to the plane of the loop, Sov. Phys. Solid State, vol.2, p.1109, 1960.

A. G. Aronov and G. E. Pikus, Spin injection into semiconductors, Sov. Phys. Semicond, vol.10, p.698, 1976.

Z. G. Yu and M. E. Flatté, Electric-field dependent spin diffusion and spin injection into semiconductors, Physical Review B, vol.66, issue.20, p.201202, 2002.
DOI : 10.1103/PhysRevB.66.201202
URL : http://arxiv.org/abs/cond-mat/0201425

Z. G. Yu and M. E. Flatté, Spin diffusion and injection in semiconductor structures:??? Electric field effects, Physical Review B, vol.66, issue.23, p.235302, 2002.
DOI : 10.1103/PhysRevB.66.235302

G. Schmidt, D. Ferrand, L. W. Mollenkamp, A. T. Filip, and B. J. Van-wees, Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, Physical Review B, vol.62, issue.8, p.4790, 2000.
DOI : 10.1103/PhysRevB.62.R4790

A. Fert and H. Jaffres, Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor, Physical Review B, vol.64, issue.18, p.184420, 2001.
DOI : 10.1103/PhysRevB.64.184420

R. P. Borges, C. L. Denis, J. F. Gregg, E. Jouguelet, K. Ounadjela et al., Comparative study of spin injection into metals and semiconductors, Journal of Physics D: Applied Physics, vol.35, issue.3, p.186, 2002.
DOI : 10.1088/0022-3727/35/3/304

. Ounadjela, Spin injection efficiency in spin electronic devices, J. Magn. Mater, vol.265, p.274, 2003.

V. F. Motsnyi, V. I. Safarov, J. De-boeck, J. Das, W. Van-roy et al., Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure, Applied Physics Letters, vol.81, issue.2, p.265, 2002.
DOI : 10.1063/1.1491010

C. Duluard, A. Bsiesy, A. Filipe, A. Francinelli, H. Achard et al., Magnetic and electrical characterization of ???ferromagnet/insulator/silicon??? diodes, Materials Science and Engineering: B, vol.126, issue.2-3, p.168, 2006.
DOI : 10.1016/j.mseb.2005.09.010
URL : https://hal.archives-ouvertes.fr/hal-00019862

E. C. Stöner and E. P. Wohlfarth, A mechanism of magnetic hysteresis in heterogeneous alloys, p.599, 1948.

]. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt et al., Molenkamp ?Injection and detection of a spin-polarized current in a light-emitting diode?, REFERENCES Nature, vol.402, p.787, 1999.

]. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno et al., Awschalom, ?Electrical spin injection in a ferromagnetic semiconductor heterostructure ?, Nature, vol.402, issue.2, p.790, 1999.

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. Schönherr et al., Room-Temperature Spin Injection from Fe into GaAs, Physical Review Letters, vol.87, issue.1, p.16601, 2001.
DOI : 10.1103/PhysRevLett.87.016601
URL : http://hdl.handle.net/2003/459

]. A. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. , Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor, Applied Physics Letters, vol.80, issue.7, p.1240, 2002.
DOI : 10.1063/1.1449530

R. Franchy, Growth of thin, crystalline oxide, nitride and oxynitride films on metal and metal alloy surfaces, Surface Science Reports, vol.38, issue.6-8, p.195, 2000.
DOI : 10.1016/S0167-5729(99)00013-8

J. H. Park, G. S. Lee, J. Y. Yang, K. S. Yoon, C. O. Kim et al., Efficient characterization of ultrathin AlOx insulating barriers in magnetic tunnel junctions fabricated by masked rf plasma oxidation technique, Applied Physics Letters, vol.80, issue.21, p.3982, 2002.
DOI : 10.1063/1.1481538

X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank et al., Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100), Physical Review Letters, vol.94, issue.5, p.56601, 2005.
DOI : 10.1103/PhysRevLett.94.056601

G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. Parkin et al., Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector, Applied Physics Letters, vol.87, issue.26, p.262503, 2005.
DOI : 10.1063/1.2149369

H. Oughaddou, S. Vizzini, B. Aufray, B. Ealet, J. ?. Gay et al., Growth and oxidation of aluminum thin films deposited on Ag(1???1???1), Applied Surface Science, vol.252, issue.12, p.4167, 2006.
DOI : 10.1016/j.apsusc.2005.06.024

P. Hesto, The nature of electronic conduction in thin insulating layers, Instabilities in Silicon Devices, p.263, 1986.

J. Maserjian and N. , interface during Fowler???Nordheim tunneling, Journal of Vacuum Science and Technology, vol.20, issue.3, p.743, 1982.
DOI : 10.1116/1.571448

]. R. Hill, Poole-Frenkel conduction in amorphous solids, Philosophical Magazine, vol.34, issue.181, p.59, 1971.
DOI : 10.1063/1.1702682

A. Annexe, Forces d'interactions et modes opératoires de l'AFM

B. Annexe, Lithographie AFM ? mécanisme d'oxydation

D. Annexe, Blocage de Coulomb ? transistor à un électron