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Etude de la croissance de boîtes quantiques InAs/InP(001) par épitaxie en phase vapeur aux organométalliques pour des applications à 1,55 µm

Abstract : We have studied the growth of InAs/InP(001) quantum dots by metalorganic vapor phase epitaxy for the realisation of 1.55 µm devices. The structural properties of the dots, studied by transmission electronic microscopy, and their optical properties, studied by photoluminescence, have been correlated to the growth conditions. Our study evidences on one hand thermodynamic and kinetic influences of InAs growth parameters, and on the other hand the influence of the cap-layer growth.
We show that quantum dot wavelength can be tuned by varying the cap-layer growth rate or by an intentional phosphorus incorporation (InAsP dot formation). The good control of the morphology and of the emission wavelength of the dots opens the way for applications in the 1.55 µm telecommunication domain aimed by this study. The use of high cap-layer growth rate to embed the quantum dots allows to obtain an emission beyond 2 µm, and then opens the way for new applications in gas sensing.
Finally, the observation at low temperature (4 K) of the exciton and biexciton of a single InAs/InP(001) quantum dot by micro-photoluminescence shows that these quantum dots could be used for the realisation of single photon sources for 1.55 µm quantum cryptography.
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https://tel.archives-ouvertes.fr/tel-00192587
Contributor : Adrien Michon <>
Submitted on : Wednesday, November 28, 2007 - 4:47:31 PM
Last modification on : Wednesday, December 9, 2020 - 3:09:20 PM
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  • HAL Id : tel-00192587, version 1

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Adrien Michon. Etude de la croissance de boîtes quantiques InAs/InP(001) par épitaxie en phase vapeur aux organométalliques pour des applications à 1,55 µm. Matière Condensée [cond-mat]. Université Pierre et Marie Curie - Paris VI, 2007. Français. ⟨tel-00192587⟩

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