Recherches expérimentales sur l'épitaxie ou orientation mutuelle de cristaux d'espèces différentes, Bull. Soc. Fr. Minér. Crist, vol.51, p.7, 1928. ,
De l'épitaxie: quelques remarques sur le problème qu'elle soulève ,
Formation of self-assembled quantum dots induced by the Stranski???Krastanow transition: a comparison of various semiconductor systems, Comptes Rendus Physique, vol.6, issue.1, 2005. ,
DOI : 10.1016/j.crhy.2004.11.003
Key parameters for the formation of II???VI self-assembled quantum dots, Journal of Alloys and Compounds, vol.371, issue.1-2, p.63, 2004. ,
DOI : 10.1016/j.jallcom.2003.05.006
Defects in epitaxial multilayers I. Misfit dislocations, Journal of Crystal Growth, vol.27 ,
DOI : 10.1016/0022-0248(74)90424-2
Defects in epitaxial multilayers, Journal of Crystal Growth, vol.29, issue.3, p.273, 1975. ,
DOI : 10.1016/0022-0248(75)90171-2
Defects in epitaxial multilayers, Journal of Crystal Growth, vol.32, issue.2, p.265, 1976. ,
DOI : 10.1016/0022-0248(76)90041-5
Misfit dislocations in nanocomposites with quantum dots, nanowires and their ensembles, Ad.in Phys, p.627, 2006. ,
Epitaxial self-organization: from surfaces to magnetic materials, C. R. Physique, vol.6, issue.1, 2005. ,
DOI : 10.1002/chin.200605245
URL : https://hal.archives-ouvertes.fr/hal-00004734
Surface evolution of faceted islands, Surface Science, vol.515, issue.2-3, p.493, 2002. ,
DOI : 10.1016/S0039-6028(02)01998-2
Barrierless Formation and Faceting of SiGe Islands on Si(001), Physical Review Letters, vol.89, issue.19, p.196104, 2002. ,
DOI : 10.1103/PhysRevLett.89.196104
Evolution of Ge/Si(100) islands: Island size and temperature dependence, Journal of Applied Physics, vol.87, issue.5, p.2245, 2000. ,
DOI : 10.1063/1.372168
As on GaAs(100), Physical Review B, vol.46, issue.15, p.9551, 1992. ,
DOI : 10.1103/PhysRevB.46.9551
Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study, Physical Review B, vol.62, issue.24, p.16657, 2000. ,
DOI : 10.1103/PhysRevB.62.16657
Formation of Si/Ge nanostructures at surfaces by self-organization, J. Phys.: Cond. Matter, vol.16, p.1535, 2004. ,
Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study, Physical Review Letters, vol.66, issue.15, 1991. ,
DOI : 10.1103/PhysRevLett.66.1998
Structural Transition in Large-Lattice-Mismatch Heteroepitaxy, Physical Review Letters, vol.77, issue.19 ,
DOI : 10.1103/PhysRevLett.77.4046
Self-organized epitaxial growth on spontaneously nano-patterned METplates, C. R. Physique, vol.6, 2005. ,
Role of patterning in islands nucleation on semiconductor surfaces, Comptes Rendus Physique, vol.7, issue.9-10, 2006. ,
DOI : 10.1016/j.crhy.2006.10.013
Nanometric artificial structuring of semiconductor surfaces for crystalline growth, Comptes Rendus Physique, vol.6, issue.1, 2005. ,
DOI : 10.1016/j.crhy.2004.11.006
Two-dimensional long-range???ordered growth of uniform cobalt nanostructures on a Au(111) vicinal template, Europhysics Letters (EPL), vol.58, issue.5, p.730, 2002. ,
DOI : 10.1209/epl/i2002-00410-4
Nano-patterned silicon surfaces for the self-organised growth of metallic nanostructures, Superlattices and Microstructures, vol.36, issue.1-3, p.235, 2004. ,
DOI : 10.1016/j.spmi.2004.08.006
URL : https://hal.archives-ouvertes.fr/tel-00012192
Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates, Applied Physics Letters, vol.82, issue.26, p.4779, 2003. ,
DOI : 10.1063/1.1581986
Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces, Nanotechnology, vol.17, issue.17, p.4451, 2006. ,
DOI : 10.1088/0957-4484/17/17/028
Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates, Journal of Applied Physics, vol.93, issue.10, p.6258, 2003. ,
DOI : 10.1063/1.1566455
Self-assembling of Ge on finite Si(001) areas comparable with the island size, Selfassembling of Ge on finite Si (001) areas comparable with the island size, p.3517, 2003. ,
DOI : 10.1063/1.1576498
Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning, Nanotechnology, vol.14, issue.2, p.264, 2002. ,
DOI : 10.1088/0957-4484/14/2/331
Local Strain-Mediated Chemical Potential Control of Quantum Dot Self-Organization in Heteroepitaxy, Physical Review Letters, vol.92, issue.2, pp.25502-25503, 2004. ,
DOI : 10.1103/PhysRevLett.92.025502
Ge dot organization on Si substrates patterned by focused ion beam, Applied Physics Letters, vol.85, issue.26, p.6401, 2004. ,
DOI : 10.1063/1.1828597
On the mechanisms of epitaxial island alignment on patterned substrates, Journal of Applied Physics, vol.97, issue.3, p.33527, 2005. ,
DOI : 10.1063/1.1848195
Strained heteroepitaxy on nanomesas: a way toward perfect lateral organization of quantum dots, Journal of Crystal Growth, vol.275, issue.1-2, p.305, 2005. ,
DOI : 10.1016/j.jcrysgro.2004.10.145
URL : https://hal.archives-ouvertes.fr/hal-00125383
Formation and ordering of Ge nanocrystals on SiO 2 using FIB nanolithography, Mat. Sc. Sem. Proc, vol.9, p.812, 2006. ,
Solid-state dewetting for ordered arrays of crystallographically oriented metal particles, Applied Physics Letters, vol.86, issue.12, p.121903, 2005. ,
DOI : 10.1063/1.1885180
Lateral ordering of quantum dots by periodic subsurface stressors, Applied Physics Letters, vol.74, issue.16, p.2280, 1999. ,
DOI : 10.1063/1.123824
How to control the self-organization of nanoparticles by bonded thin layers, Surface Science, vol.432, issue.1-2 ,
DOI : 10.1016/S0039-6028(99)00501-4
Self-organized growth of nanostructures arrays on strain-relief patterns, Nature, vol.394, 1998. ,
Computation of the preferential nucleation sites for Ge quantum dots on a relaxed SiGe layer, Acta Materialia, vol.55, issue.1, p.225, 2007. ,
DOI : 10.1016/j.actamat.2006.07.027
Relaxed template for fabricating regularly distributed quantum dot arrays, Applied Physics Letters, vol.71, issue.24, p.3586, 1997. ,
DOI : 10.1063/1.120393
Epitaxial Systems, Physical Review Letters, vol.78, issue.3, p.503, 1997. ,
DOI : 10.1103/PhysRevLett.78.503
Strong alignment of self-assembling InP quantum dots, Physical Review B, vol.54, issue.7, p.4913, 1996. ,
DOI : 10.1103/PhysRevB.54.4913
Lattice engineered compliant substrate for defect-free heteroepitaxial growth, Applied Physics Letters, vol.70, issue.13, p.1685, 1997. ,
DOI : 10.1063/1.118669
GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth ,
Twist-type silicon bicrystals and compliant substrates prepared from silicon-on-insulator wafers, Philosophical Magazine A, vol.3, issue.4, p.881, 2000. ,
DOI : 10.1080/01418610008212088
Compliant substrates: a review on the concept, techniques and mechanisms, Applied Surface Science, vol.164, issue.1-4 ,
DOI : 10.1016/S0169-4332(00)00326-3
Compliant effect in twist-bonded systems, Applied Surface Science, vol.188, issue.1-2, p.193, 2002. ,
DOI : 10.1016/S0169-4332(01)00745-0
URL : https://hal.archives-ouvertes.fr/hal-00149669
Self-organized pattern formation of biomolecules at silicon surfaces: Intended application of a dislocation network, Mat. Sci. And Eng. C, vol.26, p.902, 2006. ,
Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network, Applied Physics Letters, vol.88, issue.7, p.73112, 2006. ,
DOI : 10.1063/1.2176849
Contribution à l'étude des interfaces de soudure directe dans le silicium, 1996. ,
Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices, Journal of Applied Physics, vol.82, issue.10, p.4892, 1997. ,
DOI : 10.1063/1.366353
Wafer bonding of different III???V compound semiconductors by atomic hydrogen surface cleaning, Journal of Applied Physics, vol.90, issue.8, p.3856, 2001. ,
DOI : 10.1063/1.1403684
Organisation à longue distance par un réseau de dislocations faiblement enterré de nanostructures de semiconducteurs III-V auto-assemblées sur substrat de GaAs, 2004. ,
Long-range ordering of III???V semiconductor nanostructures by shallowly buried dislocation networks, Journal of Physics: Condensed Matter, vol.16, issue.45, p.7941, 2004. ,
DOI : 10.1088/0953-8984/16/45/016
URL : https://hal.archives-ouvertes.fr/hal-00003231
Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures, Physical Review B, vol.70, issue.15, p.155329, 2004. ,
DOI : 10.1103/PhysRevB.70.155329
URL : https://hal.archives-ouvertes.fr/hal-00003230
Ordered growth of germanium hut islands on Si (001) molecular bonded substrates, Applied Physics Letters, vol.85, issue.23, p.5700, 2004. ,
DOI : 10.1063/1.1829795
Ordered growth of germanium dots induced by the strain field of tilt dislocations in molecular bonded silicon (001) thin films, Surface Science, vol.600, issue.11, p.135, 2006. ,
DOI : 10.1016/j.susc.2006.03.020
Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates, Journal of Crystal Growth, vol.278, issue.1-4, p.83, 2005. ,
DOI : 10.1016/j.jcrysgro.2004.12.167
Ultra thin silicon films directly bonded onto silicon wafers, Mat. Sci. Eng. B, vol.73, p.42, 2000. ,
Accurate control of the misorientation angles in direct wafer bonding, Applied Physics Letters, vol.80, issue.5, p.793, 2002. ,
DOI : 10.1063/1.1446987
Stability of interfacial dislocations in (001) silicon surfacial grain boundaries, Applied Physics Letters, vol.80, issue.22, p.4121, 2002. ,
DOI : 10.1063/1.1481957
Ordering of Ge quantum dots with buried Si dislocation networks, Applied Physics Letters, vol.80, issue.17, p.3078, 2002. ,
DOI : 10.1063/1.1474601
Auto-organisation de nano-structures par des réseaux de dislocations enterrées ,
Fabrication of nanoperiodic surface structures by controlled etching of dislocations in bicrystals, Applied Physics Letters, vol.78, issue.15, p.2205, 2001. ,
DOI : 10.1063/1.1362330
Controlled surface nanopatterning with buried dislocation arrays, Surface Science, vol.545, issue.3, p.211, 2003. ,
DOI : 10.1016/j.susc.2003.08.051
38 II.1.4.a) Le collage hydrophile, p.39 ,
40 II.2.1. Préparation des surfaces avant collage hydrophobe41 II.2.1.a) Etapes de finition du substrat SOI (Positif), 41 II.2.1.b) Etapes de finition du Négatif, p.42 ,
44 II.2.2.a) Contamination interfaciale, II.2.2. Hydrophobisation des surfaces de silicium45 II.2.2.b) Interaction entre les particules et, p.45 ,
46 II.2.3.a), p.48 ,
Organisation à longue distance par un réseau de dislocations faiblement enterré de nanostructures de semiconducteurs III-V auto-assemblées sur substrat de GaAs, 2004. ,
Wafer bonding of different III???V compound semiconductors by atomic hydrogen surface cleaning, Journal of Applied Physics, vol.90, issue.8, p.3856, 2001. ,
DOI : 10.1063/1.1403684
Etude du collage par adhésion moléculaire hydrophile: Application au contrôle de l'énergie de collage, Thèse de Doctorat de l'Institut National Polytechnique de Grenoble, 1992. ,
Etude de la fracture impliquée dans le procédé Smart Cut? Application au matériau SOI, Thèse de l'Institut National Polytechnique de Grenoble, 2000. ,
The Bonding Energy Control: An Original Way to Debondable Substrates, Elect, Chem. Soc. Proceedings, Semi. Waf. Bond. VII: Sci. Techn. And Appl, vol.19, p.49, 2003. ,
Rough Surface Adhesion Mechanisms for Wafer Bonding, ECS Transactions ,
DOI : 10.1149/1.2357071
SEMICONDUCTOR WAFER BONDING, Annual Review of Materials Science, vol.28, issue.1 ,
DOI : 10.1146/annurev.matsci.28.1.215
A Model for the Silicon Wafer Bonding Process, Japanese Journal of Applied Physics, vol.28, issue.Part 1, No. 10, p.1735, 1989. ,
DOI : 10.1143/JJAP.28.1735
What determines the lateral bonding speed in silicon wafer bonding?, Appl. Phys. Lett, vol.67, p.863, 1995. ,
Les théories de l'adhésion et mesure de l'adhérence, Le vide et les couches minces, pp.47-257, 1991. ,
Wafer direct bonding: tailoring adhesion between brittle materials ,
Accurate control of the misorientation angles in direct wafer bonding, Appl. Phys. Lett, vol.80, p.793, 2002. ,
Mechanism of Particle Deposition on Silicon Surface during Dilute HF Cleans, Journal of The Electrochemical Society, vol.150, issue.11, p.667, 2003. ,
DOI : 10.1149/1.1610469
Vapor Phase Wafer Cleaning Technology, Handbook of semiconductor wafer cleaning technology, p.294, 1993. ,
Chemistry at silicon crystalline surfaces, Appl. Surf. Sci, vol.89, p.351, 1995. ,
The brittle-ductile transition in silicon, p.55, 1991. ,
61 III.2.1. Etude du système CrO 3 62 III.2.1.a) Etude de l'homogénéité en épaisseur d'une solution à base de Chrome sur substrats témoins SOI64 III.2.1.c) Evolution de la nano-structuration de surface au cours de la gravure chimique Y7d) Etude de la croissance de Ge sur des surfaces faiblement nano-structurées (obtenues après gravure chimique préférentielle Y7), p.69 ,
69 III.2.2.a) Mise en évidence expérimentale de l'intérêt d'une seconde attaque chimique69 III.2.2.b) Caractéristiques du système CH 3 COOH-HNO 3 -HF : Etat de l'art71 III.2.2.c) Etude de l'attaque Dash sur substrat TwSOI74 III.2.2.d) Etude d'une solution diluée en HF sur substrat, 79 III.2.2.e) Conclusion sur la gravure chimique basée sur le système HNA, p.88 ,
89 III.3.1. Structuration de surface après une attaque CrO 3 ? HF ? H 2 90 III.3.2.a) Structuration de surface après une attaque Dash, p.93 ,
106 III.5.3. Modélisation de l'intensité diffractée d'une surface nanostructurée périodique 2D en absence du réseau de dislocationsa) Expression du facteur de structure : S(q), p.110 ,
114 III.6.1. Estimation de la profondeur de tranchée après une oxydation thermique, III.6. Impact de l'oxydation thermique sur une surface ,
Quick Turnaround Technique for Highlighting Defects in Thin Si, p.105, 2004. ,
Silicon preferential (defect delineation) etch rate, Properties of crystalline silicon, number 20 in Datareviews Series, p.822, 1999. ,
Copper Precipitation on Dislocations in Silicon, Journal of Applied Physics, vol.27, issue.10, p.1193, 1956. ,
DOI : 10.1063/1.1722229
A New Preferential Etch for Defects in Silicon Crystals, Journal of The Electrochemical Society, vol.124, issue.5, p.757, 1977. ,
DOI : 10.1149/1.2133401
Fabrication of nanoperiodic surfaces structures by controlled etching of dislocations in bicrystals, Appl. Phys. Lett, vol.78, p.2205, 2001. ,
Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study, Surf. Sci, vol.600, p.3187, 2006. ,
Chemical Etching of Silicon: I. The System HF ,
Chemical Etching of Silicon: II. The system HF, HNO 3 , H 2 O, and HC 2 H 3 O 2, J. Electrochem. Soc, vol.107, p.108, 1960. ,
Chemical Etching of Silicon: III. A Temperature Study in the Acid System, p.365, 1961. ,
High efficiency chemical etchant for the formation of luminescent porous silicon, Appl. Phys. Lett, vol.64, p.1693, 1994. ,
On the Mechanism of Chemically Germanium and SIlicon, J. Electrochem. Soc, vol.107, p.810, 1960. ,
Photoluminescence and formation mechanism of chemically etched silicon, Appl. Phys. Lett, vol.60, p.1863, 1992. ,
Acid-Based Etching of Silicon Wafers: Mass-Transfer and Kinetic Effects, J. Electrochem. Soc, vol.147, pp.176-188, 2000. ,
A Theorical and Experimental Analysis of Macrodecoration of Defects in Monocrystalline Silicon, J. Electrochem. Soc, vol.149, pp.153-165, 2002. ,
A Review and Unifying Analysis of Defect Decoration and Surface Polishing by Chemical Etching in Silicon Processing, Ind. Eng. Chem. Res, vol.42, p.2558, 2003. ,
Highly Sensitive Etchants for Delineation of Defects in Single-and Polycrystalline Silicon Materials, J. Electrochem. Soc, vol.143, p.4079, 1996. ,
Electronic transport in nanometre-scale silicon-on-insulator membranes, Nature, vol.439, p.703, 2006. ,
Dissociation of screw dislocations in (001) lowangle twist boundaries: a source of the 30° partial dislocations in silicon, Phil. Mag. Lett, vol.79, p.531, 1999. ,
Structural characterization of ultra-thin (001) silicon films bonded onto (001) silicon wafers : a transmission electron microscopy study ,
Huge differences between low-and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers, Appl. Phys. Lett, vol.77, p.1135, 2000. ,
The brittle-ductile transition in silicon, p.55, 1991. ,
Lateral ordering of quantum dots by periodic subsurface stressors, Appl. Phys. Lett, vol.74, p.2280, 1999. ,
Computation of the preferential nucleation sites for Ge quantum dots on a relaxed SiGe layer, Acta Materiala, vol.55, p.225, 2007. ,
Dislocations strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction ,
Grazing incidence diffraction by laterally patterned semiconductor nanostructures, J. Phys. D: Appl. Phys, vol.32, p.726, 1999. ,
Strain and shape analysis of multilayer surface gratings by coplanar and by grazing incidence x-ray diffraction, J. Appl. Phys, vol.87, p.3744, 2000. ,
High Resolution X-Rays Scattering from Thin Films and Multilayers, p.149, 1998. ,
Observation of atomic step morphology on silicon oxide surfaces, J. Vac. Sci. Techn. A, vol.10, p.2055, 1992. ,
125 IV.1.2. Influence du rapport d'aspect de la structuration de surface sur l'organisation latérale des îlotsa) Estimation de la courbure de surface modélisée par un profil de forme cycloïdale, Sommaire IV.1. Influences de paramètres cinétiques et morphologiques sur.............. 131 IV.1.3.c) Résultats et Discussion, p.133 ,
139 IV.2.1. Description de la technique de diffraction des rayons X en incidence rasante (GIXD) appliquée aux substrats nanostructurés TwSOIa) Estimation de la contrainte et de l'interdiffusionb) Description de la technique de diffraction anomale des rayons X, 144 IV.2.2.c) Estimation de la concentration de Germanium au sein des îlots ......................................... 146 IV.2.2.d) Extraction des facteurs de diffusion atomique du Si et, p.148 ,
Physique de la croissance cristalline, Collection Aléa-Saclay, 1995. ,
Diffusional Viscosity of a Polycrystalline Solid, Journal of Applied Physics, vol.21, issue.5, p.437, 1950. ,
DOI : 10.1063/1.1699681
Theory of Thermal Grooving, Journal of Applied Physics, vol.28, issue.3, p.333, 1957. ,
DOI : 10.1063/1.1722742
Abstract, Mat. Res. Soc. Symp. Proc. 715, 2002. ,
DOI : 10.1557/PROC-715-A8.5
URL : https://hal.archives-ouvertes.fr/hal-01153717
Local Strain-Mediated Chemical Potential Control of Quantum Dot Self-Organization in Heteroepitaxy, Physical Review Letters, vol.92, issue.2, 2004. ,
DOI : 10.1103/PhysRevLett.92.025502
Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates, Applied Physics Letters, vol.82, issue.26, p.26, 2003. ,
DOI : 10.1063/1.1581986
Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates, Journal of Applied Physics, vol.93, issue.10, p.10, 2003. ,
DOI : 10.1063/1.1566455
On the mechanisms of epitaxial island alignment on patterned substrates, Journal of Applied Physics, vol.97, issue.3, p.33527, 2005. ,
DOI : 10.1063/1.1848195
Strained heteroepitaxy on nanomesas: a way toward perfect lateral organization of quantum dots, Journal of Crystal Growth, vol.275, issue.1-2, p.305, 2005. ,
DOI : 10.1016/j.jcrysgro.2004.10.145
URL : https://hal.archives-ouvertes.fr/hal-00125383
Relaxation model of coherent island formation in heteroepitaxial thin films, Journal of Applied Physics, vol.88, issue.8, p.4586, 2000. ,
DOI : 10.1063/1.1311305
Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study, Surface Science, vol.600, issue.16, pp.3187-3193, 2006. ,
DOI : 10.1016/j.susc.2006.06.004
Resonant Anomalous X-Rays Scattering : Theory and Applications, 1994. ,
Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction, Phys. Rev. Lett, vol.92, p.186101, 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00140720
Favre-Nicolin, In situ investigation of the island nucleation of Ge on Si(001) using x-ray scattering methods, Appl. Phys. Lett, vol.89, p.143114, 2006. ,
The validity of form-factor, modified-form-factor and anomalous-scattering-factor approximations in elastic scattering calculations, Acta Crystallographica Section A Foundations of Crystallography, vol.51, issue.3, p.271, 1995. ,
DOI : 10.1107/S010876739400886X
Numerical tables of anomalous scattering factors calculated by the cromer and liberman method Direct Determination of Strain and Composition Profiles in SiGe Islands by Anomalous X-Ray Diffraction at High Momentum Transfer, KEK Report Phys. Rev. Lett, vol.88, issue.90, pp.66105-66106, 1989. ,
Mane-Mane, O. Fruchart, Real-Time Monitoring of Growing Nanoparticles, Science, vol.300, p.1416, 2003. ,
Grazing incidence small angle x-ray scattering: new tool for studying thin film growth, J. Appl. Cryst, vol.22, issue.6, p.528, 1989. ,
: a program for grazing-incidence small-angle X-ray scattering analysis of supported islands, Journal of Applied Crystallography, vol.35, issue.4, p.406, 2002. ,
DOI : 10.1107/S0021889802006088
Favre-Nicolin, In situ investigation of the island nucleation of Ge on Si(001) using x-ray scattering methods, Appl. Phys. Lett, vol.89, p.143114, 2006. ,
165 V.2.1. Influence de la morphologie de surface sur l'organisation latérale des îlots métalliques 165 V.2.1.a) Croissance d'îlots de nickel, ., p.168 ,
176 V.3.1. Croissance d'îlots de nickel, ., p.179 ,
Semiconductor nanowires, Journal of Physics D: Applied Physics, vol.39, issue.21, p.387, 2006. ,
DOI : 10.1088/0022-3727/39/21/R01
Carbon nanotube catalysis by metal silicide: resolving inhibition versus growth, Nanotechnology, vol.18, issue.1, p.15602, 2007. ,
DOI : 10.1088/0957-4484/18/1/015602
The structure of gold silicide in thin Au/Si films, Thin Solid Films, vol.68, issue.2, p.373, 1980. ,
DOI : 10.1016/0040-6090(80)90269-2
UHV high-resolution electron microscopy and chemical analysis of room-temperature Au deposition on Si(001)-2??1, Physical Review B, vol.55, issue.12, p.7910, 1997. ,
DOI : 10.1103/PhysRevB.55.7910
Surface energy and work function of elemental metals, Physical Review B, vol.46, issue.11 ,
DOI : 10.1103/PhysRevB.46.7157
Metal adatoms on oxidised silicon surfaces, Metal adatoms on oxidised silicon surfaces, p.937, 1988. ,
DOI : 10.1088/0268-1242/3/9/018
Solid-state dewetting for ordered arrays of crystallographically oriented metal particles, Applied Physics Letters, vol.86, issue.12, p.121903, 2005. ,
DOI : 10.1063/1.1885180
Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni???Si reactive film formation, Applied Physics Letters, vol.87, issue.4, p.41904, 2005. ,
DOI : 10.1063/1.1999021
Applications of a tight-binding total-energy method for transition and noble metals: Elastic constants, vacancies, and surfaces of monatomic metals, Physical Review B, vol.54, issue.7 ,
DOI : 10.1103/PhysRevB.54.4519
Epitaxial Ag templates on Si(001) for bicrystal CoCrTa media, Epitaxial Ag templates on Si (001) for bicrystal CoCrTa media, p.4370, 1997. ,
DOI : 10.1063/1.364826
Modelling of surface energies of elemental crystals, Journal of Physics: Condensed Matter, vol.16, issue.4 ,
DOI : 10.1088/0953-8984/16/4/001
Surface plasmon subwavelength optics, Nature, vol.424, issue.6950, p.824, 2003. ,
DOI : 10.1038/nature01937
URL : https://hal.archives-ouvertes.fr/hal-00472360
The Optical Properties of Metal Nanoparticles:?? The Influence of Size, Shape, and Dielectric Environment, The Journal of Physical Chemistry B, vol.107, issue.3, p.668, 2003. ,
DOI : 10.1021/jp026731y
Nanoparticles Optics: The Importance of Radiative, Dipole Coupling in Two-Dimensionnal Nanoparticles Arrays ,
Optical properties of two interacting gold nanoparticles, Optics Communications, vol.220, issue.1-3, p.137, 2003. ,
DOI : 10.1016/S0030-4018(03)01357-9
Interparticle Coupling Effects on Plasmon Resonances of Nanogold Particles, Interparticle Coupling Effects on Plasmon Resonances of Nanogold Particles, p.1087, 2003. ,
DOI : 10.1021/nl034197f
Optical pulse propagation in metal nanoparticle chain waveguides, Physical Review B, vol.67, issue.20, p.205402, 2003. ,
DOI : 10.1103/PhysRevB.67.205402
Plasmon slot waveguides: Towards chip-scale propagation with subwavelength-scale localization, Physical Review B, vol.73, issue.3, p.35407, 2006. ,
DOI : 10.1103/PhysRevB.73.035407
Exploitation of Localized Surface Plasmon Resonance, Advanced Materials, vol.34, issue.19, p.1685, 2004. ,
DOI : 10.1002/adma.200400271
Detection of DNA Hybridization by Gold Nanoparticle Enhanced Transmission Surface Plasmon Resonance Spectroscopy, The Journal of Physical Chemistry B, vol.107, issue.27, p.6497, 2003. ,
DOI : 10.1021/jp0342834
Optical excitation of surface plasmons: An introduction, Contemporary Physics, vol.35, issue.3, p.173, 1991. ,
DOI : 10.1103/PhysRevLett.64.784
Radiative Decay of Non-radiative Surface Plasmons Excited by Ligth, Zeitschrift für Naturforschung, vol.23, p.2135, 1968. ,
Direct Measurement of the Single-Metal-Cluster Optical Absorption, Phys. Rev. Lett, vol.93, p.127401, 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00142055
Nanoparticles Optics: The Importance of Radiative, Dipole Coupling in Two-Dimensionnal Nanoparticles Arrays ,
Controlling the optical response of regular arrays of gold particles for surface-enhanced Raman scattering, Phys. Rev. B, vol.65, p.75419, 2002. ,
Grating-induced plasmon mode in gold nanoparticle arrays, The Journal of Chemical Physics, vol.123, issue.22, p.221103, 2005. ,
DOI : 10.1063/1.2140699
Optical Extinction Spectroscopy of Oblate, Prolate and Ellipsoid Shaped Gold Nanoparticles: Experiments and Theory, Plasmonics, vol.63, issue.8, p.135, 2006. ,
DOI : 10.1007/s11468-006-9014-7
Surface studies by low-energy electron microscopy (LEEM) and conventional UV photoemission electron microscopy (PEEM), Ultramicroscopy, vol.31, issue.1, p.49, 1989. ,
DOI : 10.1016/0304-3991(89)90033-8
Ultrahigh vacuum surface electron microscopy with a cathode lens ,
Resonant electron emission of silver spheroids induced by laser surface plasmon excitation, Journal of Physics: Condensed Matter, vol.9, issue.27, p.5765, 1997. ,
DOI : 10.1088/0953-8984/9/27/008
The lateral photoemission distribution from a defined cluster/substrate system as probed by photoemission electron microscopy, New Journal of Physics, vol.7, p.68, 2005. ,
DOI : 10.1088/1367-2630/7/1/068
Optical properties of metal nanoparticles as probed by photoemission electron microscopy, Journal of Applied Physics, vol.101, issue.8, p.83518, 2007. ,
DOI : 10.1063/1.2719282
URL : https://hal.archives-ouvertes.fr/hal-00268215