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Nanostructuration de surface de plaques de silicium (001) par révélation d'un réseau de dislocations enterrées pour l'auto-organisation à longue distance de nanostructures

Abstract : In order to carry on the trend of optical and electronical devices dimensions shrinking, nanostructures are expected to be an alternative solution to conventional microelectronics technology. Nevertheless, to be exploited, the size, density and positioning of these nanostructures have to be accurately controlled. To avoid time consuming solutions, collective growth is privileged and long range positional order displays in general only if the surface is first prepared. In this framework, we developed a nanopatterned substrate by revealing of a buried dislocations (2D) regular network elaborated by direct twist bonding of (001) silicon wafers. Use of preferential chemical etching has been optimized to reveal dislocations lines creating at the surface a square network of silicon nano-dots disjointed by nano-trenches more or less deep. This kind of template has been tested to induce a long range positional order of Ge dots and metallic nanoparticles (Ni, Au, Ag). We shown that self-organization of these nanostructures was possible only if the energetic barrier induced by trenches depth was large enough to prevent the kinetic effects. In these conditions, self-assembled Ge islands have been analyzed by X-rays methods and metallic nanoparticles by plasmon resonance.
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https://tel.archives-ouvertes.fr/tel-00185768
Contributor : Alexis Bavard <>
Submitted on : Sunday, November 18, 2007 - 3:21:15 PM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM
Long-term archiving on: : Thursday, September 23, 2010 - 4:26:56 PM

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  • HAL Id : tel-00185768, version 3

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Alexis Bavard. Nanostructuration de surface de plaques de silicium (001) par révélation d'un réseau de dislocations enterrées pour l'auto-organisation à longue distance de nanostructures. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨tel-00185768v3⟩

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