Préparation et caractérisation d'un alliage amorphe ferrimagnétique de GdCo entrant dans la conception de jonctions tunnel magnétiques
Résistance des jonctions tunnel magnétiques aux rayonnements ionisants

Abstract : The magnetic random access memories (MRAM) are on the way to supplant the other forms of random access memories using the states of electric charge, and this thanks to their many technical advantages: not-volatility, speed, low consumption power, robustness. Also, the MRAM are alleged insensitive with the ionizing radiations, which was not checked in experiments until now. The current architecture of the MRAM is based on the use of magnetic tunnel junctions (MTJ). These MRAM can present an important disadvantage, because they are likely of present errors of addressing, in particular when integration (density of memory cells) is increasingly thorough. The work undertaken during this thesis relates to these two points: - to check the functional reliability of the MRAM containing JTM exposed to high energy ionizing radiations ; - to study a ferrimagnetic amorphous alloy, GdCo, likely to enter the composition of JTM and allowing to free from the possible errors of addressing by a process of thermal inhibition of the memory cells. This work of thesis showed that the MRAM containing JTM preserve their functional properties fully when they are subjected to intense ionizing radiations, and that GdCo is a very interesting material from the point of view of the solid state physics and magnetism, that its physical properties are very promising as for its applications, and that its integration in a JTM still claims technological developments.
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Yann Conraux. Préparation et caractérisation d'un alliage amorphe ferrimagnétique de GdCo entrant dans la conception de jonctions tunnel magnétiques
Résistance des jonctions tunnel magnétiques aux rayonnements ionisants. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨tel-00182425⟩

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