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Les Procédés par Plasmas Impliqués dans l'Intégration des Matériaux SiOCH Poreux pour les Interconnexions en Microélectronique

Abstract : To increase the integrated circuits pace and decrease the devices size, interconnects must be isolated by porous SiOCH. Because of porous SiOCH degradation by plasma exposure, the integration of narrow trenches into porous SiOCH necessitates to re-develop plasma processes (etching, striping and pore sealing).

This thesis addresses plasmas/materials interactions during the integration of porous SiOCH into narrow trenches (<100 nm). The transfer of patterns from a metallic or an organic hard mask to a porous or a hybrid SiOCH (hybrid means that pores are created after the integration) is characterized and optimized thanks to plasma diagnostics and material analyses. Mechanisms of material degradation during post-etch plasma treatments are also defined.

The hybrid material and the dense SiOCH present similar etch mechanisms with a fluorocarbon-based plasma. The TiN and the organic material present other etch mechanisms, assuring a good selectivity. The process defined for narrow trenches etching with an organic hard mask leads to straight profiles. On the contrary, profiles distortions due to etch by-products deposits, bow profiles and dielectric lines buckling are obtained with a TiN hard mask. Both porous and hybrid materials are modified by post-etch plasma treatments.
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https://tel.archives-ouvertes.fr/tel-00181477
Contributor : Maxime Darnon <>
Submitted on : Monday, October 29, 2007 - 11:57:09 AM
Last modification on : Tuesday, February 16, 2021 - 3:33:53 AM
Long-term archiving on: : Tuesday, September 21, 2010 - 2:56:56 PM

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  • HAL Id : tel-00181477, version 2

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Maxime Darnon. Les Procédés par Plasmas Impliqués dans l'Intégration des Matériaux SiOCH Poreux pour les Interconnexions en Microélectronique. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨tel-00181477v2⟩

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