Technique de caractérisation des semi-conducteurs ultra-rapides C.3 Caractérisation "pompe-sonde ,
on peut interpréter cette variation comme une conséquence de l'occupation de certains états dans la bande de valence et dans la bande de conduction. Ainsi, juste après l'excitation optique du matériau, un photon d'énergie h? identique à celle de l'impulsion initiale, sera plus dicilement absorbée puisque les niveaux d'arrivée dans la bande de conduction sont déjà occupés ,
InGaAs la densité d'état dans la bande de conduction est beaucoup plus faible que celle de la bande de valence (plus d'un ordre de grandeur, cf section B ,
évolution temporelle de la transmission optique après excitation permet donc, en première approximation, d'en déduire l'évolution temporelle de la population de la bande de conduction. À partir de ces données ,
ne sont pas tout à fait adaptées à la mesure de constante de temps >100 ps. En eet, de longs retards impliquent de grandes diérences de longueur de trajet optique entre la pompe et la sonde. Or, la superposition optique de la pompe et de la sonde sur l'échantillon est critique et est dicile à obtenir quelle que soit la position de la ligne à retard ,
plusieurs critères sont importants : on doit avoir h? ? E gap Si h? E gap on mesure alors le temps que mettent les électrons pour redescendre au minimum de la bande de conduction. La puissance de la sonde utilisée doit être susamment faible pour ne pas trop modier la distribution des porteurs ,
Lignes de champ électrique, lignes équipotentielles (tous les 0,5 V), et norme du champ électrique pour un photoconducteur planaire de 5 µm et une diérence de potentiel de 10 V entre les 2 électrodes ,
Beam patterns of terahertz quantum cascade lasers with subwavelength cavity dimensions, Appl. Phys. Lett, vol.88, p.151105, 2006. ,
Hole trapping time measurement in low-temperature-grown gallium arsenide, Appl. Phys. Lett, issue.25, p.8353045306, 2003. ,
Optical generation and sideband injection locking of tunable 11???120 GHz microwave/millimetre signals, Electronics Letters, vol.36, issue.18, p.3615471548, 2000. ,
DOI : 10.1049/el:20001090
Comparison of three dierent methods for coupling of microwave and terahertz signals generated by resonant laser-assisted eld emission, J. Vac. Sci. Technol. B, vol.19, issue.1, p.6871, 2001. ,
Étude théorique et experimentale des lasers solides Er 3+ et Nd 3+ : applications des lasers bi-fréquences aux télécommunications optiques et hyperfréquences, 2001. ,
Dual tunable wavelength Er:Yb:Glass laser for terahertz beat frequency generation, IEEE Photonics Technology Letters, issue.11, p.1015541556, 1998. ,
Tunable absolute-fréquency laser at 1,5 µmm Electronics Letters, p.17801782, 2000. ,
An amorphous silicon photodetector for picosecond pulses, Applied Physics Letters, vol.36, issue.1, p.6668, 1980. ,
DOI : 10.1063/1.91276
High power and high brightness laser diode structures at 980nm using an Al-free active region, Novel In-Plane Semiconductor Laser II, volume 4995 of Proceedings of SPIE, Photonics West, p.184195, 2003. ,
All-optoelectronic terahetz system using low-temperature-grown InGaAs photomixers, Optics Express, issue.23, p.1396399644, 2005. ,
) grown at low-temperature, x Ga 1?x As, p.2214711475, 1993. ,
Imaging with THz quantum cascade lasers using a Schottky diode mixer, Optics Express, vol.13, issue.17, p.1364976503, 2005. ,
DOI : 10.1364/OPEX.13.006497
Finit-element simulation of GaAs MESFET's with lateral doping proles and submicron gates, IEEE transactions on electron device, p.23, 1976. ,
Gol tsman. Direct detection eect in small volume hot electron bolometer mixers, Appl. Phys. Lett, issue.16, p.86163503, 2005. ,
Terahertz instruments for radioastronomy and planetary remote sensing from space. 3 mes journées térahertz, Aussois, p.2330, 2005. ,
Nonlinear phase matching in THz semiconductor waveguides, Semiconductor Science and Technology, vol.19, issue.8, p.964970, 2004. ,
DOI : 10.1088/0268-1242/19/8/003
Millimeter Wave Engineering and Applications, 1984. ,
Bowing parameter of the band-gap energy of GaN x As 1?x, Appl. Phys. Lett, vol.70, issue.12, p.16081610, 1997. ,
High-average-power 1-µm performance and frequency conversion of a diode-end-pumped Yb :YAG laser, IEEE J. of Quant. Elec, issue.10, p.3420102019, 1998. ,
Semiconductor Statistics, 1962. ,
Semiconducting and other major properties of gallium arsenide, Journal of Applied Physics, vol.53, issue.10, pp.123-181, 1982. ,
DOI : 10.1063/1.331665
Annealing studies of low-temperature-grown gaas :be, J. Appl. Phys, vol.71, issue.4, p.16991707, 1992. ,
Slot aerials and their relation to complementary wire aerials (Babinet's principle), Journal of the Institution of Electrical Engineers - Part IIIA: Radiolocation, vol.93, issue.4, p.620626, 1946. ,
DOI : 10.1049/ji-3a-1.1946.0150
The dynamics of spatially-resolved laser eigenstates, IEEE Journal of Quantum Electronics, vol.26, issue.9, p.14511454, 1990. ,
DOI : 10.1109/3.102619
Planar antennas on a dielectric surface, Electronics Letters, vol.17, issue.20, p.729731, 1981. ,
DOI : 10.1049/el:19810512
Photomixing up to 3.8 THz in low???temperature???grown GaAs, Applied Physics Letters, vol.66, issue.3, p.285287, 1995. ,
DOI : 10.1063/1.113519
Milliwatt output levels and superquadratic bias dependence in a low???temperature???grown GaAs photomixer, Applied Physics Letters, vol.64, issue.24, p.33113313, 1994. ,
DOI : 10.1063/1.111289
Oscillations up to 712 GHz in InAs/AlSb resonant???tunneling diodes, Applied Physics Letters, vol.58, issue.20, p.5822912293, 1991. ,
DOI : 10.1063/1.104902
Coherent millimeter???wave generation by heterodyne conversion in low???temperature???grown GaAs photoconductors, Journal of Applied Physics, vol.73, issue.3, p.14801484, 1993. ,
DOI : 10.1063/1.353222
Étude théorique et expérimentale de quelques aspects nouveaux des lasers à un ou plusieurs axes de propagation. Applications, 1997. ,
Tunable optical microwave source using spacially resolved laser eigenstates, Optics Letters, vol.22, issue.6, p.384386, 1997. ,
DOI : 10.1364/ol.22.000384
Photoelectronic Properties of Semiconductors, 1992. ,
An ultrawide-bandwidth tapered resistive TEM horn antenna, IEEE Trans. on Antennas ans Prop, vol.48, issue.12, p.18481857, 2000. ,
CW submillimeter laser action in optically pumped methyl uoride, methyl alcohol and vinyl chloride gases, Appl. Phys. Lett, vol.17, issue.6, p.249251, 1970. ,
Deep-level optical spectroscopy in GaAs, Physical Review B, vol.23, issue.10, p.53355359, 1981. ,
DOI : 10.1103/PhysRevB.23.5335
A broadband 800 GHz Schottky balanced doubler, IEEE Microwave and Wireless Components Letters, vol.12, issue.4, p.117118, 2002. ,
DOI : 10.1109/7260.993286
Optimisation of ber-coupled laser-diode end-pumped laser : inuence of pump beam quality, IEEE J. of Quant. Elec, issue.11, p.3220102016, 1996. ,
Génération et détection de rayonnement aux fréquences térahertz à partir d'antennes photo-conductrices en InGaAs sur InP, 2006. ,
Nanoscale tera-hertz metal-semiconductor-metal photodetectors, IEEE Journal of Quantum Electronics, vol.28, issue.10, p.23582368, 1992. ,
DOI : 10.1109/3.159542
Comparison of In 0.33 Al 0.67 As / In 0.34 Ga 0.66 As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buer layers, J. Vac. Sci. Technol. B, vol.18, issue.5, p.25132517, 2000. ,
URL : https://hal.archives-ouvertes.fr/hal-00158227
Sources lasers femtosecondes pompées par diode basées sur l'ion Ytterbium, 2001. ,
Continuous-wave THz generation through photomixing using a dual-frequency Yb 3+ :KGd(WO 4 ) 2 laser, Passive Millimetre-Wave and Terahertz Imaging and Technology, 2004. ,
THz-dual-frequency Yb 3+ :KGd(WO 4 ) 2 laser for continuous wave thz generation through photomixing, Electronics Letters, issue.15, p.40942943, 2004. ,
Terahertz time-domain spectroscopy charactérisation of the far-infrared absorption and index of refraction of high-resistivity, oat-zone silicon, J. Opt. Soc. Am. B, vol.21, issue.7, p.13791386, 2004. ,
Annealing induced refractive index and absorption changes of low???temperature grown GaAs, Applied Physics Letters, vol.65, issue.25, p.6532693271, 1994. ,
DOI : 10.1063/1.112433
Impedance properties of complementary multiterminal planar structures, IRE Transactions on Antennas and Propagation, vol.7, issue.5, pp.371-378, 1959. ,
DOI : 10.1109/TAP.1959.1144717
Caractérisation électro-optique de composants térahertz par échatillonnage Franz-Keldysh subpicoseconde, 2003. ,
Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs, Applied Physics Letters, vol.84, issue.12, p.20492051, 2004. ,
DOI : 10.1063/1.1688977
URL : https://hal.archives-ouvertes.fr/hal-00018499
Terahertz intersubband electroluminescence from quantum cascade heterostructures, 2001. ,
OPTICAL FREQUENCY MIXING IN BULK SEMICONDUCTORS, Applied Physics Letters, vol.1, issue.4, p.7779, 1962. ,
DOI : 10.1063/1.1753704
Carrier lifetime versus ionimplantation dose in silicon on sapphire, Appl. Phys. Lett, vol.50, issue.8, p.460462, 1987. ,
Ultrafast photoresponse at 1.55 ??m in InGaAs with embedded semimetallic ErAs nanoparticles, Applied Physics Letters, vol.86, issue.5, p.51908, 2005. ,
DOI : 10.1063/1.1852092
Demonstration of a 630-GHz photomixer used as a local oscillator, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), p.127130, 1999. ,
DOI : 10.1109/MWSYM.1999.779440
Accurate modeling of dual dipole and slot elements used with photomixers for coherent terahertz output power, IEEE Trans. Microwave Theory and Tech, vol.49, issue.6, p.10321038, 2001. ,
Room-temperature terahertz emission from nanometer field-effect transistors, Applied Physics Letters, vol.88, issue.14, p.141906, 2006. ,
DOI : 10.1063/1.2191421
URL : https://hal.archives-ouvertes.fr/hal-00241317
The equiangular spiral antenna, IRE Transactions on Antennas and Propagation, vol.7, issue.2, p.181189, 1959. ,
DOI : 10.1109/TAP.1959.1144653
Two-terminal millimeter-wave sources, IEEE Trans. Microwave Theory and Tech, vol.46, issue.6, p.739746, 1998. ,
DOI : 10.1109/tsmw.1997.702438
LT- GaAs detector with 451 fs response at 1.55 µm via two-photon absorption, Electronics Letters, vol.35, issue.2, p.173174, 1999. ,
Étude théorique et expérimentale de la génération térahertz par photocommutation dans des composants en GaAs basse température, 2004. ,
Photoluminescence and deep levels in latticematched InGaAsN/GaAs, J. of Appl. Phys, vol.96, p.41764180, 2004. ,
Pulsed terahertz transmission spectroscopy of liquid CHCl 3 , CCl 4 , and their mixtures, J. Phys. Chem, vol.100, issue.29, p.1182411835, 1996. ,
High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs, IEEE Transactions on Electron Devices, vol.37, issue.12, pp.12-224932498, 1990. ,
DOI : 10.1109/16.64523
Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures ?, Appl. Phys. Lett, issue.26, p.7943134315, 2001. ,
Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer, Applied Physics Letters, vol.86, issue.24, p.244104, 2005. ,
DOI : 10.1063/1.1949724
Lossy Transmission Lines, 1987. ,
Antennes plaquées fractales millimétriques et sub-millimétriques, 13ème Journées Nationales Microondes -Lille, 2003. ,
Photocurrent of 1eV GaInNAs lattice-matched to GaAs, Journal of Crystal Growth, vol.195, issue.1-4, p.401408, 1998. ,
DOI : 10.1016/S0022-0248(98)00563-6
Handbook series on Semiconductor parameters , vol2, World Scientic, 1999. ,
Modelling of millimetre-wave and terahertz imaging systems, Passive Millimetre-Wave and Terahertz Imaging and Technology , volume 5619 of Proc. of SPIE, p.154165, 2004. ,
Performance characteristics of the dual exponentially tapered slot antenna (detsa) for wireless communications applications, IEEE Transactions on Vehicular Technology, vol.52, issue.2, p.305311, 2003. ,
DOI : 10.1109/TVT.2003.808796
Optimization of photomixers and antennas for continuous-wave terahertz emission, IEEE Journal of Quantum Electronics, vol.41, issue.5, p.41717728, 2005. ,
DOI : 10.1109/JQE.2005.844471
High resistivity annealed low-temperature GaAs with 100 fs lifetimes, Applied Physics Letters, vol.83, issue.20, p.8341994201, 2003. ,
DOI : 10.1063/1.1628389
Continuous-wave terahertz imaging using diode lasers, Terahertz and Gigahertz Electronics and Photonics III, p.139150, 2004. ,
DOI : 10.1117/12.542788
Resonant dipole antennas for continuous-wave terahertz photomixers, Applied Physics Letters, vol.85, issue.9, p.16221624, 2004. ,
DOI : 10.1063/1.1789244
Subband gap carrier dynamics in low-temperaturegrown gaas, Appl. Phys. Lett, vol.70, issue.15, 1997. ,
An ultrafast optoelectronic THz beam system : Applications to time-domain spectroscopy. Optics and Photonics News, p.2128, 1992. ,
Far-infrared timedomain spectroscopy with terahertz beams of dielectrics and semiconductors, J. Opt. Soc. Am. B, vol.7, issue.10, p.20062015, 1990. ,
Generation of coherent cwterahertz radiation using a tunable dual-wavelength external cavity laser diode, Jpn. J Appl. Phys, issue.11A, pp.38-1246, 1999. ,
Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures, IEEE Journal of Quantum Electronics, vol.28, issue.10, p.2824642472, 1992. ,
DOI : 10.1109/3.159553
High-speed photodetector applications of gaas and In x Ga 1?x As/GaAs grown by low-temperature molecular-beam epitaxy, J. Electron. Mat, issue.12, p.2214491455, 1993. ,
Terahertz studies of collisionbroadened rotational lines, J. Phys. Chem. A, vol.101, issue.20, p.36463660, 1997. ,
The semiconductor waveguide facet reectivity problem, IEEE J. of Quant. Elec, issue.8, p.2922732281, 1993. ,
Ultrafast ytterbium-doped bulk lasers and laser ampliers, Appl. Phys. B, vol.69, p.317, 1999. ,
Handbook of microwave integrated circuits, Artech Houce, 1987. ,
GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 µm, Appl. Phys. Lett, vol.75, issue.18, p.27162718, 1999. ,
Terahertz study of 1,3,5-trinitro-s-triazine by time-domain and Fourier transform infrared spectroscopy, Applied Physics Letters, vol.85, issue.23, p.8555355537, 2004. ,
DOI : 10.1063/1.1829793
Optimum indium composition for (Ga,In)(N,As)???GaAs quantum wells emitting beyond 1.5??m, Applied Physics Letters, vol.88, issue.9, p.91111, 2006. ,
DOI : 10.1063/1.2180441
Observation of arsenic precipitates in GaInAs grown at low temperature on InP, Applied Physics Letters, vol.62, issue.18, p.6222092211, 1993. ,
DOI : 10.1063/1.109418
Achromatically injection-seeded terahertz-wave parametric generator, Optics Letters, vol.27, issue.24, p.21732175, 2002. ,
DOI : 10.1364/ol.27.002173
Injection-seeded terahertz-wave parametric oscillator, Applied Physics Letters, vol.78, issue.8, p.7810261028, 2001. ,
DOI : 10.1063/1.1350420
InP-InGaAs Uni-Traveling-Carrier photodiodes, IEICE Trans. Elec, issue.6, pp.83-938949, 2000. ,
Reduced thermal conductivity in low-temperature-grown GaAs, Applied Physics Letters, vol.74, issue.16, pp.2325-2327, 1999. ,
DOI : 10.1063/1.123839
Carrier lifetimes in ion???damaged GaAs, Applied Physics Letters, vol.54, issue.24, p.24242426, 1989. ,
DOI : 10.1063/1.101096
Echantillonnage électro-optique à 1,55 µm pour la mesure de circuits rapides sur InP, 2004. ,
Ultrafast carrier dynamics and optical nonlinearities of low???temperature???grown InGaAs/InAlAs multiple quantum wells, Applied Physics Letters, vol.69, issue.26, p.6940624064, 1996. ,
DOI : 10.1063/1.117818
Structural properties of As???rich GaAs grown by molecular beam epitaxy at low temperatures, Applied Physics Letters, vol.54, issue.19, p.5418811883, 1989. ,
DOI : 10.1063/1.101229
Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.7, issue.4, p.710713, 1989. ,
DOI : 10.1116/1.584630
Terahertz semiconductor-heterostructure laser, Nature, vol.417, p.156159, 2002. ,
A 1.3-??m GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K, Japanese Journal of Applied Physics, vol.39, issue.Part 2, No. 2A, pp.39-86, 1999. ,
DOI : 10.1143/JJAP.39.L86
Dipole and slot elements and arrays on semi-innite substrates, IEEE Trans. on Antennas and Propagation, issue.6, p.33600607, 1985. ,
DOI : 10.1109/tap.1985.1143638
A Novel Material of GaInNAs for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, pp.351273-1275, 1996. ,
DOI : 10.7567/SSDM.1995.D-8-1
Accurate relative frequency cancellation between two independent lasers, Optics Letters, vol.24, issue.1, p.1618, 1989. ,
DOI : 10.1364/OL.24.000016
Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs, Applied Physics Letters, vol.75, issue.21, p.7533363338, 1999. ,
DOI : 10.1063/1.125343
Be-doped low-temperature-grown GaAs material for optoelectronic switches, IEE Proc. Optoelectron, pp.111-115, 2002. ,
DOI : 10.1049/ip-opt:20020435
Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low???temperature GaAs for optoelectronic applications, Applied Physics Letters, vol.66, issue.24, p.6633043306, 1995. ,
DOI : 10.1063/1.113738
1.9THz quantum-cascade lasers with one-well injector, Applied Physics Letters, vol.88, issue.12, p.121123, 2006. ,
DOI : 10.1063/1.2189671
URL : https://hal.archives-ouvertes.fr/in2p3-00148681
Material properties of Ga 0.47 In 0.53 As grown on InP by low-temperature molecular beam epitaxy, Appl. Phys. Lett, issue.11, p.6113471349, 1992. ,
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs, Applied Physics Letters, vol.74, issue.5, p.729731, 1999. ,
DOI : 10.1063/1.123105
The eect of arsenic overpressure on the structural properties GaAs grown at low temperature, J. Appl. Phys, issue.8, p.8043774383, 1996. ,
Étude théorique et expérimentale des lasers solides bi-fréquences dans les domaines GHz à THz, en régime continu ou impulsionnel. Applications micro-ondes, 2003. ,
Recombinaition in Semiconductors, 1991. ,
Amplitude and frequency stabilized solid-state lasers in the near infrared, Journal of Physics D: Applied Physics, vol.34, issue.16, p.23962407, 2001. ,
DOI : 10.1088/0022-3727/34/16/303
A self-consistent two-dimensional model of quantum-well semiconductor laser : Optimisation of a GRIN-SCH SQW laser structure, IEEE J. of Quant. Elec, vol.28, issue.4, p.792803, 1992. ,
Al-free active region (?? = 852nm) DFB laser diodes for atomic clocks and interferometry applications, Semiconductor Lasers and Laser Dynamics II, p.61840, 2006. ,
DOI : 10.1117/12.662723
Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs, IEEE Journal of Quantum Electronics, vol.24, issue.2, p.267275, 1988. ,
DOI : 10.1109/3.123
Saturation characteristics of fast photodetectors, IEEE Transactions on Microwave Theory and Techniques, vol.47, issue.7, pp.1297-1303, 1999. ,
DOI : 10.1109/22.775469
Native point defects in low???temperature???grown GaAs, Applied Physics Letters, vol.67, issue.2, p.279281, 1995. ,
DOI : 10.1063/1.114782
The role of point defects and arsenic precipitates in carrier trapping and recombination in low???temperature grown GaAs, Applied Physics Letters, vol.69, issue.10, p.6914651467, 1996. ,
DOI : 10.1063/1.116909
Anomalous hall-eect results in low-temperature molecular-beamepitaxial GaAs, : Hopping in a dense EL2 like band, Phys. Rev. B, issue.6, pp.423578-3581, 1990. ,
Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200C, Appl. Phys. Lett, issue.23, p.6029002902, 1992. ,
Annealing dynamics of molecular-beam epitaxial GaAs grown at 200C, J. Appl. Phys, vol.74, issue.1, p.306310, 1993. ,
Diode-pumped cw and fs laser based on Yb:CaF 2, Commercial and Biomedical Applications of Ultrafast Lasers V, p.186194, 2005. ,
DOI : 10.1117/12.593879
Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the eects of annealing, J. Appl. Phys, issue.7, p.7936223629, 1996. ,
Le ltre monochromatiques polarisant et ses applications en physique solaire (annales d'astrophysique 1944), Sel. paper on Instr. in Astronomy, vol.87, p.331, 1993. ,
A 1.7-1.9 THz local oscillator source, IEEE Microwave and Wireless Components Letters, vol.14, issue.6, p.253255, 2004. ,
DOI : 10.1109/LMWC.2004.828027
Local oscillator chain for 1.55 to 1.75 THz with 100- µW peak power, IEEE Microw. Wireless Compon. Lett, issue.12, p.15871873, 2005. ,
High-performance operation of single-mode terahertz quantum cascade lasers with metallic gratings, Applied Physics Letters, vol.87, issue.18, p.181101, 2005. ,
DOI : 10.1063/1.2120901
Ultrafast response (? 2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 µm, Appl. Phys. Lett, issue.26, p.8355515553, 2003. ,
Beat frequency generation up to 3.4THz from simultaneous two-mode lasing operation of sampled-grating DBR laser, Electronics Letters, vol.35, issue.6, p.472474, 1999. ,
Design and characterisation of optical-THz phase-matched traveling-wave photomixers, Proc. SPIE, p.484492, 1999. ,
A tunable cavity-locked diode laser source for terahertz photomixing, IEEE Transactions on Microwave Theory and Techniques, vol.48, issue.3, p.380387, 2000. ,
DOI : 10.1109/22.826836
Generation of coherent terahertz radiation by photomixing in dipole conductive antennas, Appl. Phys. Lett, vol.70, issue.5, p.559561, 1997. ,
Terahertz photomixing with diode lasers in lowtemperature-grown GaAs, Appl. Phys. Lett, issue.26, p.6738443846, 1995. ,
Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs, Applied Physics Letters, vol.70, issue.3, p.354356, 1997. ,
DOI : 10.1063/1.118412
Formation of arsenic precipitates in GaAs buer layers grown by molecular beam epitaxy at low substrate temperatures, Appl. Phys. Lett, vol.57, issue.15, p.15311533, 1990. ,
Tunable CW-THz system with a log-periodic photoconductive emitter, International Semiconductor Device Research Symposium, 2003, p.20412045, 2004. ,
DOI : 10.1109/ISDRS.2003.1272114
Etude de photodetecteurs à ondes progressives adaptés à la detection hyperfréquence, 1997. ,
Structural and electrical properties of low temperature GaInAs, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.11, issue.3, pp.798-801, 1993. ,
DOI : 10.1116/1.586792
Sensing with Terahertz Radiation, 2003. ,
DOI : 10.1007/978-3-540-45601-8
Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler, IEEE Transactions on Microwave Theory and Techniques, vol.48, issue.6, p.10001006, 2000. ,
DOI : 10.1109/22.904737
Widely tunable two-frequency Nd :YAG laser, Conference on Lasers and Electro-Optics (CLEO), p.23172319, 2005. ,
DOI : 10.1109/cleo.2005.202456
Dual-frequency laser at 1.53 µm for generating high-purity optically carried microwave signals up to 20 GHz, Conference on Lasers and Electro-Optics (CLEO), 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00674591
Generation of CW terahertz radiation using two-colour laser with Fabry-Perot etalon, Electronics Letters, vol.41, issue.3, p.41128129, 2005. ,
DOI : 10.1049/el:20057532
High-power terahertz-wave generation from a resonant-antenna-integrated uni-traveling-carrier photodiode, 2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859), p.313316, 2004. ,
DOI : 10.1109/MWP.2004.1396904
An integral equation and its application to spiral antennas on semi-innite dielectric materials, IEEE Trans. on Antennas and Prop, vol.46, issue.2, p.267274, 1998. ,
The leaky lens : A broadband xed-beam leaky-wave antenna, IEEE Trans. on Antennas and Prop, issue.10, p.5332403246, 2005. ,
Thermodynamic analysis of the MBE growth of GaInAsN, Semiconductor Science and Technology, vol.16, issue.10, p.16831835, 2001. ,
DOI : 10.1088/0268-1242/16/10/304
Identication of a second energy level of EL2 in n-type GaAs, Phys. Rev. B, vol.38, issue.5, p.36063609, 1988. ,
Optical properties of Au, Ni, and Pb at submillimeter wavelengths, Applied Optics, vol.26, issue.4, p.744752, 1987. ,
DOI : 10.1364/AO.26.000744
Control of low-temperature-grown gaas for utltrafast switchning applications, Ultrafast Penomena in Semiconductors V, volume 4280 of Proc. of SPIE, p.202210, 2001. ,
Handbook of Optical Constants of Solids, 1998. ,
Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy, Applied Physics Letters, vol.77, issue.2, p.214216, 2000. ,
DOI : 10.1063/1.126928
Recombination mechanism and carrier lifetimes of semi???insulating GaAs:Cr, Journal of Applied Physics, vol.68, issue.3, p.10941098, 1990. ,
DOI : 10.1063/1.346749
Photoconducteurs sur GaAs : gain, bruit, structure optimale, Annales des Télécommunications, vol.40, pp.3-498104, 1985. ,
Ytterbium-doped ber ampliers, IEEE J. of Quant. Elec, vol.33, issue.7, p.10491056, 1997. ,
Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing, Journal of Applied Physics, vol.98, issue.8, p.83524, 2005. ,
DOI : 10.1063/1.2112173
CW and tunable laser operation of Yb 3+ doped CaF 2, Appl. Phys. B, vol.78, p.681684, 2004. ,
Génération et propagation aux fréquences Térahertz, 2002. ,
Terahertz frequency dierence from vertically integrated low-temperature-grown GaAs photodetector, Appl. Phys. Lett, issue.7, p.8111741176, 2002. ,
Integrated terahertz TEM horn antenna, Electronics Letters, vol.43, issue.2, p.7375, 2007. ,
DOI : 10.1049/el:20073679
URL : https://hal.archives-ouvertes.fr/hal-00255785
Terahertz electromagnetic generation via optical frequency difference, IEE Proceedings - Optoelectronics, vol.149, issue.3, pp.82-87, 2002. ,
DOI : 10.1049/ip-opt:20020321
URL : https://hal.archives-ouvertes.fr/hal-00019548
Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy, Applied Physics Letters, vol.70, issue.18, p.7024192421, 1997. ,
DOI : 10.1063/1.118890
Optique, géométrique, ondulatoire et polarisation, 1991. ,
Optique, Fondements et applications, Dunod, 2000. ,
Generation of phase-locked and tunable continuous-wave radiation in the terahertz regime, Optics Letters, vol.30, issue.23, p.32313233, 2005. ,
DOI : 10.1364/OL.30.003231
Trap???enhanced electric fields in semi???insulators: The role of electrical and optical carrier injection, Applied Physics Letters, vol.59, issue.16, p.1972, 1974. ,
DOI : 10.1063/1.106153
Millimeter-wave and terahertz intergrated circuit antennas, Proceedongs of the IEEE, p.17481770, 1992. ,
Terahertz optical rectication from 110 zinc-blende crystals, Appl. Phys. Lett, vol.64, issue.11, p.13241326, 1994. ,
Frequency independent antennas, IRE International Convention Record, 1966. ,
DOI : 10.1109/IRECON.1957.1150565
Imaging antenna arrays, IEEE Transactions on Antennas and Propagation, vol.30, issue.4, p.535540, 1982. ,
DOI : 10.1109/TAP.1982.1142856
Terahertz response of metal-semiconductor-metal photodetectors, Journal of Applied Physics, vol.84, issue.11, pp.6419-6425, 1998. ,
DOI : 10.1063/1.368969
The interaction of laser and photoconductor in a continuous-wave terahertz photomixer, IEEE Journal of Quantum Electronics, vol.41, issue.9, p.11881196, 2005. ,
DOI : 10.1109/JQE.2005.852804
Terahertz?wave surface?emitted dierence frequency generation in slant?stripe?type periodically poled LiNbO 3 crystal, Appl. Phys. Lett, vol.81, issue.18, p.33233325, 2002. ,
Model of thin-lm microstrip line for circuit design, IEEE Trans. on Mirowaves Theory and Tech, vol.49, issue.1, p.104110, 2001. ,
Standard Mathematical Tables, Chemical Rubber CO, 1969. ,
Picosecond nonequilibrium carrier transport in GaAs, Applied Physics Letters, vol.38, issue.2, p.104105, 1981. ,
DOI : 10.1063/1.92258
Detection and identification of explosives using terahertz pulsed spectroscopic imaging, Applied Physics Letters, vol.86, issue.24, p.241116, 2005. ,
DOI : 10.1063/1.1946192
Metal-Semiconductor-Metal traveling-wave photodetectors, IEEE Photonics Technology Letters, issue.6, p.16623625, 2001. ,
A monochromatic and high?power terahertz source tunable in the ranges of 2.7?38.4 and 58.2?3540 µm for variety of potential applications, Appl. Phys. Lett, vol.84, issue.10, p.16351637, 2004. ,
Terahertz technology, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.3, p.910928, 2002. ,
DOI : 10.1109/22.989974
Twisted-mode technique for obtaining axially uniform energy density in a laser cavity, Appl. Opt, vol.4, p.142, 1965. ,
Ultrafast high???intensity nonlinear absorption dynamics in low???temperature grown gallium arsenide, Applied Physics Letters, vol.69, issue.17, p.6925662568, 1996. ,
DOI : 10.1063/1.117701
Hole photoionization cross sections of EL2 in GaAs, Applied Physics Letters, vol.52, issue.20, p.16891691, 1988. ,
DOI : 10.1063/1.99020
New MBE buer used to eliminate backgating in GaAs MESFETs, IEEE Elect. Dev. Lett, vol.9, issue.2, p.7780, 1988. ,
Subpicosecond photoconducting dipole antennas, IEEE Journal of Quantum Electronics, vol.24, issue.2, p.255260, 1988. ,
DOI : 10.1109/3.121
Transit-time limited frequency response of InGaAs MSM photodetectors, IEEE Transactions on Electron Devices, vol.37, issue.11, p.22852291, 1990. ,
DOI : 10.1109/16.62290
Highcarrier-density electron dynamics in low-temperature-grown GaAs, Appl. Phys. Lett, issue.24, p.7032453247, 1997. ,
Propriétés physique des matériaux III-V à non st÷chiométrie contrôlée, 1999. ,
Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under dierent growth and annealing conditions, J. Appl. Phys, issue.10, p.8860266031, 2000. ,
Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature, Applied Physics Letters, vol.74, issue.9, p.12391241, 1999. ,
DOI : 10.1063/1.123511
Detection of terahertz radiation with lowtemperature-grown GaAs-based photoconductive antenna using 1.55 µm probe, Appl. Phys. Lett, vol.77, issue.9, p.13961398, 2000. ,
A low-noise xed-tuned 300-360- GHz sub-harmonic mixer using planar schottky diodes, IEEE Microw. Wireless Compon. Lett, vol.15, issue.12, p.865867, 2005. ,
Device saturation behavior of submillimeter-wave membrane photonic transmitters, IEEE Photonics Tech. Lett, vol.16, issue.3, p.873875, 2004. ,
Etude par double et triple diraction des rayons X, et modélisation , de la relaxation des contraintes dans des hétérostructures semiconductrices GaInAs/ GaAs et Al InAs/ GaAs à rampe de composition graduelle linéaire, 1997. ,
Terahz time domain spectroscopy of water vapor, Optics Letters, vol.14, issue.20, p.11281130, 1989. ,
Characterization of an optoelectronic terahertz beam system, IEEE Transactions on Microwave Theory and Techniques, vol.38, issue.11, pp.1684-1691, 1990. ,
DOI : 10.1109/22.60016
A photomixer local oscillator for a 630-GHz heterodyne receiver. IEEE microwave and guided wave letters, p.245247, 1999. ,
Optical and terahertz power limits in the low-temperature-grown GaAs photomixers, Applied Physics Letters, vol.71, issue.19, p.7127432745, 1997. ,
DOI : 10.1063/1.120445
Electron lifetime of heavily Be-doped Ga 0.47 In 0.53 As as function of growth temperature and doping density, Appl. Phys. Lett, issue.22, p.8041514153, 2002. ,
URL : https://hal.archives-ouvertes.fr/hal-00148650
Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy, Phys. Rev. B, issue.7, p.4533723375, 1992. ,
Arsenic precipitates and the semi-insulating properties of GaAs buer layers grown by low-temperature molecular beam epitaxy, Appl. Phys. Lett, vol.57, issue.13, p.13311333, 1990. ,
Role of excess As in low-temperature-grown GaAs, Physical Review B, vol.46, issue.8, p.4646174620, 1992. ,
DOI : 10.1103/PhysRevB.46.4617
An overview of fractal antenna engeineering research, IEEE Antennas and Propagation Mag, vol.45, issue.1, p.3857, 2003. ,
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers, Japanese Journal of Applied Physics, vol.31, issue.Part 2, No. 7A, pp.31-853, 1992. ,
DOI : 10.1143/JJAP.31.L853
A novel THz source based on a two-color Nd :LSB microchip-laser and a LT-GaAsSb photomixer, Applied Physics B : Lasers and Optics, vol.87, issue.11, p.1316, 2006. ,
Terahertz quantum-cascade laser at ? = 100 µm using metal waveguidefor mode connement, Appl. Phys. Lett, vol.83, issue.11, p.21242126, 2003. ,
Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion, Physical Review Letters, vol.67, issue.17, p.23392342, 1991. ,
DOI : 10.1103/PhysRevLett.67.2339