C. Annexe, Technique de caractérisation des semi-conducteurs ultra-rapides C.3 Caractérisation "pompe-sonde

. Dans-le-cadre-d-'un-modèle-simple, on peut interpréter cette variation comme une conséquence de l'occupation de certains états dans la bande de valence et dans la bande de conduction. Ainsi, juste après l'excitation optique du matériau, un photon d'énergie h? identique à celle de l'impulsion initiale, sera plus dicilement absorbée puisque les niveaux d'arrivée dans la bande de conduction sont déjà occupés

. Dans-le-gaas, InGaAs la densité d'état dans la bande de conduction est beaucoup plus faible que celle de la bande de valence (plus d'un ordre de grandeur, cf section B

. La-mesure-de-l, évolution temporelle de la transmission optique après excitation permet donc, en première approximation, d'en déduire l'évolution temporelle de la population de la bande de conduction. À partir de ces données

. Signalons-que-les-mesures-de, ne sont pas tout à fait adaptées à la mesure de constante de temps >100 ps. En eet, de longs retards impliquent de grandes diérences de longueur de trajet optique entre la pompe et la sonde. Or, la superposition optique de la pompe et de la sonde sur l'échantillon est critique et est dicile à obtenir quelle que soit la position de la ligne à retard

. Dans-ce-type-d-'expérience, plusieurs critères sont importants : on doit avoir h? ? E gap Si h? E gap on mesure alors le temps que mettent les électrons pour redescendre au minimum de la bande de conduction. La puissance de la sonde utilisée doit être susamment faible pour ne pas trop modier la distribution des porteurs

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