C. Annexe, Technique de caractérisation des semi-conducteurs ultra-rapides C.3 Caractérisation "pompe-sonde

. Dans-le-cadre-d-'un-modèle-simple, on peut interpréter cette variation comme une conséquence de l'occupation de certains états dans la bande de valence et dans la bande de conduction. Ainsi, juste après l'excitation optique du matériau, un photon d'énergie h? identique à celle de l'impulsion initiale, sera plus dicilement absorbée puisque les niveaux d'arrivée dans la bande de conduction sont déjà occupés

. Dans-le-gaas, InGaAs la densité d'état dans la bande de conduction est beaucoup plus faible que celle de la bande de valence (plus d'un ordre de grandeur, cf section B

. La-mesure-de-l, évolution temporelle de la transmission optique après excitation permet donc, en première approximation, d'en déduire l'évolution temporelle de la population de la bande de conduction. À partir de ces données

. Signalons-que-les-mesures-de, ne sont pas tout à fait adaptées à la mesure de constante de temps >100 ps. En eet, de longs retards impliquent de grandes diérences de longueur de trajet optique entre la pompe et la sonde. Or, la superposition optique de la pompe et de la sonde sur l'échantillon est critique et est dicile à obtenir quelle que soit la position de la ligne à retard

. Dans-ce-type-d-'expérience, plusieurs critères sont importants : on doit avoir h? ? E gap Si h? E gap on mesure alors le temps que mettent les électrons pour redescendre au minimum de la bande de conduction. La puissance de la sonde utilisée doit être susamment faible pour ne pas trop modier la distribution des porteurs

. F. Fig, Lignes de champ électrique, lignes équipotentielles (tous les 0,5 V), et norme du champ électrique pour un photoconducteur planaire de 5 µm et une diérence de potentiel de 10 V entre les 2 électrodes

]. A. Bibliographie1, I. Adam, J. N. Kasalynas, T. O. Hovenier, J. R. Klaassen et al., Beam patterns of terahertz quantum cascade lasers with subwavelength cavity dimensions, Appl. Phys. Lett, vol.88, p.151105, 2006.

R. Adomavi£ius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus et al., Hole trapping time measurement in low-temperature-grown gallium arsenide, Appl. Phys. Lett, issue.25, p.8353045306, 2003.

M. Al-mumin, X. Wang, W. Mao, S. A. Pappert, and G. Li, Optical generation and sideband injection locking of tunable 11???120 GHz microwave/millimetre signals, Electronics Letters, vol.36, issue.18, p.3615471548, 2000.
DOI : 10.1049/el:20001090

K. Alonso and M. J. Hagmann, Comparison of three dierent methods for coupling of microwave and terahertz signals generated by resonant laser-assisted eld emission, J. Vac. Sci. Technol. B, vol.19, issue.1, p.6871, 2001.

M. Alouini, Étude théorique et experimentale des lasers solides Er 3+ et Nd 3+ : applications des lasers bi-fréquences aux télécommunications optiques et hyperfréquences, 2001.

M. Alouini, M. Brunel, F. Bretenaker, M. Vallet, and A. L. Floch, Dual tunable wavelength Er:Yb:Glass laser for terahertz beat frequency generation, IEEE Photonics Technology Letters, issue.11, p.1015541556, 1998.

M. Alouini, M. Vallet, M. Brunel, F. Bretenaker, and A. L. Floch, Tunable absolute-fréquency laser at 1,5 µmm Electronics Letters, p.17801782, 2000.

D. H. Auston, P. Lavallard, N. Sol, and D. Kaplan, An amorphous silicon photodetector for picosecond pulses, Applied Physics Letters, vol.36, issue.1, p.6668, 1980.
DOI : 10.1063/1.91276

S. Auzanneau, M. Krakowski, F. Berlie, M. Calligaro, Y. Robert et al., High power and high brightness laser diode structures at 980nm using an Al-free active region, Novel In-Plane Semiconductor Laser II, volume 4995 of Proceedings of SPIE, Photonics West, p.184195, 2003.

C. Baker, I. S. Gregory, M. J. Evans, W. R. Tribe, E. H. Lineld et al., All-optoelectronic terahetz system using low-temperature-grown InGaAs photomixers, Optics Express, issue.23, p.1396399644, 2005.

J. M. Ballingall, P. Ho, J. Mazurowski, L. Lester, K. C. Hwang et al., ) grown at low-temperature, x Ga 1?x As, p.2214711475, 1993.

S. Barbieri, J. Alton, C. Baker, T. Lo, H. E. Beere et al., Imaging with THz quantum cascade lasers using a Schottky diode mixer, Optics Express, vol.13, issue.17, p.1364976503, 2005.
DOI : 10.1364/OPEX.13.006497

J. J. Barnes, Finit-element simulation of GaAs MESFET's with lateral doping proles and submicron gates, IEEE transactions on electron device, p.23, 1976.

J. J. Baselmans, A. Baryshev, S. F. Reker, M. Hajenius, J. R. Gao et al., Gol tsman. Direct detection eect in small volume hot electron bolometer mixers, Appl. Phys. Lett, issue.16, p.86163503, 2005.

G. Beaudin and A. Maestrini, Terahertz instruments for radioastronomy and planetary remote sensing from space. 3 mes journées térahertz, Aussois, p.2330, 2005.

V. Berger and C. Sirtori, Nonlinear phase matching in THz semiconductor waveguides, Semiconductor Science and Technology, vol.19, issue.8, p.964970, 2004.
DOI : 10.1088/0268-1242/19/8/003

P. Bhartia and I. J. Bahl, Millimeter Wave Engineering and Applications, 1984.

W. G. Bi and C. W. Tu, Bowing parameter of the band-gap energy of GaN x As 1?x, Appl. Phys. Lett, vol.70, issue.12, p.16081610, 1997.

C. Bibeau, R. J. Beach, S. C. Mitchell, M. A. Emanuel, J. Skidmore et al., High-average-power 1-µm performance and frequency conversion of a diode-end-pumped Yb :YAG laser, IEEE J. of Quant. Elec, issue.10, p.3420102019, 1998.

J. S. Blakemore, Semiconductor Statistics, 1962.

J. S. Blakemore, Semiconducting and other major properties of gallium arsenide, Journal of Applied Physics, vol.53, issue.10, pp.123-181, 1982.
DOI : 10.1063/1.331665

D. E. Bliss, W. Walukiewicz, J. W. Ager, E. E. Haller, K. T. Chan et al., Annealing studies of low-temperature-grown gaas :be, J. Appl. Phys, vol.71, issue.4, p.16991707, 1992.

H. G. Booker, Slot aerials and their relation to complementary wire aerials (Babinet's principle), Journal of the Institution of Electrical Engineers - Part IIIA: Radiolocation, vol.93, issue.4, p.620626, 1946.
DOI : 10.1049/ji-3a-1.1946.0150

F. Bretenaker and A. L. Floch, The dynamics of spatially-resolved laser eigenstates, IEEE Journal of Quantum Electronics, vol.26, issue.9, p.14511454, 1990.
DOI : 10.1109/3.102619

C. R. Brewitt-taylor, D. J. Gunton, and H. D. Rees, Planar antennas on a dielectric surface, Electronics Letters, vol.17, issue.20, p.729731, 1981.
DOI : 10.1049/el:19810512

E. R. Brown, K. A. Mcintosh, K. B. Nichols, and C. L. Dennis, Photomixing up to 3.8 THz in low???temperature???grown GaAs, Applied Physics Letters, vol.66, issue.3, p.285287, 1995.
DOI : 10.1063/1.113519

E. R. Brown, K. A. Mcintosh, F. W. Smith, K. B. Nichols, M. J. Manfra et al., Milliwatt output levels and superquadratic bias dependence in a low???temperature???grown GaAs photomixer, Applied Physics Letters, vol.64, issue.24, p.33113313, 1994.
DOI : 10.1063/1.111289

E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar et al., Oscillations up to 712 GHz in InAs/AlSb resonant???tunneling diodes, Applied Physics Letters, vol.58, issue.20, p.5822912293, 1991.
DOI : 10.1063/1.104902

E. R. Brown, F. W. Smith, and K. A. Mcintosh, Coherent millimeter???wave generation by heterodyne conversion in low???temperature???grown GaAs photoconductors, Journal of Applied Physics, vol.73, issue.3, p.14801484, 1993.
DOI : 10.1063/1.353222

M. Brunel, Étude théorique et expérimentale de quelques aspects nouveaux des lasers à un ou plusieurs axes de propagation. Applications, 1997.

M. Brunel, F. Bretenaker, and A. L. Floch, Tunable optical microwave source using spacially resolved laser eigenstates, Optics Letters, vol.22, issue.6, p.384386, 1997.
DOI : 10.1364/ol.22.000384

R. H. Bube, Photoelectronic Properties of Semiconductors, 1992.

L. T. Chang and W. D. Burnside, An ultrawide-bandwidth tapered resistive TEM horn antenna, IEEE Trans. on Antennas ans Prop, vol.48, issue.12, p.18481857, 2000.

T. Y. Chang, T. J. Bridges, and E. G. Burkhardt, CW submillimeter laser action in optically pumped methyl uoride, methyl alcohol and vinyl chloride gases, Appl. Phys. Lett, vol.17, issue.6, p.249251, 1970.

A. Chantre, G. Vincent, and D. Bois, Deep-level optical spectroscopy in GaAs, Physical Review B, vol.23, issue.10, p.53355359, 1981.
DOI : 10.1103/PhysRevB.23.5335

G. Chattopadhyay, E. Schlecht, J. Gill, S. Martin, A. Maestrini et al., A broadband 800 GHz Schottky balanced doubler, IEEE Microwave and Wireless Components Letters, vol.12, issue.4, p.117118, 2002.
DOI : 10.1109/7260.993286

Y. F. Chen, T. S. Liao, C. F. Kao, T. M. Huang, K. H. Lin et al., Optimisation of ber-coupled laser-diode end-pumped laser : inuence of pump beam quality, IEEE J. of Quant. Elec, issue.11, p.3220102016, 1996.

N. Chimot, Génération et détection de rayonnement aux fréquences térahertz à partir d'antennes photo-conductrices en InGaAs sur InP, 2006.

S. Y. Chou and M. Y. Liu, Nanoscale tera-hertz metal-semiconductor-metal photodetectors, IEEE Journal of Quantum Electronics, vol.28, issue.10, p.23582368, 1992.
DOI : 10.1109/3.159542

Y. Cordier, J. Chauveau, D. Ferre, and J. Dipersio, Comparison of In 0.33 Al 0.67 As / In 0.34 Ga 0.66 As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buer layers, J. Vac. Sci. Technol. B, vol.18, issue.5, p.25132517, 2000.
URL : https://hal.archives-ouvertes.fr/hal-00158227

A. Courjaud, Sources lasers femtosecondes pompées par diode basées sur l'ion Ytterbium, 2001.

R. Czarny, M. Alouini, C. Larat, S. Dhillon, M. Krakowski et al., Continuous-wave THz generation through photomixing using a dual-frequency Yb 3+ :KGd(WO 4 ) 2 laser, Passive Millimetre-Wave and Terahertz Imaging and Technology, 2004.

R. Czarny, M. Alouini, C. Larat, M. Krakowski, and D. Dol, THz-dual-frequency Yb 3+ :KGd(WO 4 ) 2 laser for continuous wave thz generation through photomixing, Electronics Letters, issue.15, p.40942943, 2004.

J. Dai, J. Zhang, W. Zhang, and D. Grischkowsky, Terahertz time-domain spectroscopy charactérisation of the far-infrared absorption and index of refraction of high-resistivity, oat-zone silicon, J. Opt. Soc. Am. B, vol.21, issue.7, p.13791386, 2004.

S. U. Dankowski, P. Kiesel, B. Knüpfer, M. Kneissl, G. H. Döhler et al., Annealing induced refractive index and absorption changes of low???temperature grown GaAs, Applied Physics Letters, vol.65, issue.25, p.6532693271, 1994.
DOI : 10.1063/1.112433

G. A. Deschamps, Impedance properties of complementary multiterminal planar structures, IRE Transactions on Antennas and Propagation, vol.7, issue.5, pp.371-378, 1959.
DOI : 10.1109/TAP.1959.1144717

L. Desplanque, Caractérisation électro-optique de composants térahertz par échatillonnage Franz-Keldysh subpicoseconde, 2003.

L. Desplanque, J. F. Lampin, and F. Mollot, Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs, Applied Physics Letters, vol.84, issue.12, p.20492051, 2004.
DOI : 10.1063/1.1688977
URL : https://hal.archives-ouvertes.fr/hal-00018499

S. S. Dhillon, Terahertz intersubband electroluminescence from quantum cascade heterostructures, 2001.

M. Didomenico, O. R. Svelto-jr, J. N. Pantell, and . Weaver, OPTICAL FREQUENCY MIXING IN BULK SEMICONDUCTORS, Applied Physics Letters, vol.1, issue.4, p.7779, 1962.
DOI : 10.1063/1.1753704

F. E. Doany, D. Grischkowsky, and C. Chi, Carrier lifetime versus ionimplantation dose in silicon on sapphire, Appl. Phys. Lett, vol.50, issue.8, p.460462, 1987.

D. C. Driscoll, M. P. Hanson, A. C. Gossard, and E. R. Brown, Ultrafast photoresponse at 1.55 ??m in InGaAs with embedded semimetallic ErAs nanoparticles, Applied Physics Letters, vol.86, issue.5, p.51908, 2005.
DOI : 10.1063/1.1852092

E. K. Duerr, K. A. Mcintosh, S. M. Duy, S. D. Calawa, S. Verghese et al., Demonstration of a 630-GHz photomixer used as a local oscillator, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), p.127130, 1999.
DOI : 10.1109/MWSYM.1999.779440

S. M. Duy, S. Verghese, K. A. Mcintosh, A. Jackson, A. C. Gossard et al., Accurate modeling of dual dipole and slot elements used with photomixers for coherent terahertz output power, IEEE Trans. Microwave Theory and Tech, vol.49, issue.6, p.10321038, 2001.

N. Dyakonova, A. Fatimy, J. Šusakowski, W. Knap, M. I. Dyakonov et al., Room-temperature terahertz emission from nanometer field-effect transistors, Applied Physics Letters, vol.88, issue.14, p.141906, 2006.
DOI : 10.1063/1.2191421
URL : https://hal.archives-ouvertes.fr/hal-00241317

J. D. Dyson, The equiangular spiral antenna, IRE Transactions on Antennas and Propagation, vol.7, issue.2, p.181189, 1959.
DOI : 10.1109/TAP.1959.1144653

H. Eisele and G. I. Haddad, Two-terminal millimeter-wave sources, IEEE Trans. Microwave Theory and Tech, vol.46, issue.6, p.739746, 1998.
DOI : 10.1109/tsmw.1997.702438

H. Erlig, S. Wang, T. Azfar, A. Udupa, H. R. Fetterman et al., LT- GaAs detector with 451 fs response at 1.55 µm via two-photon absorption, Electronics Letters, vol.35, issue.2, p.173174, 1999.

H. Eusèbe, Étude théorique et expérimentale de la génération térahertz par photocommutation dans des composants en GaAs basse température, 2004.

C. H. Fischer and P. Bhattacharya, Photoluminescence and deep levels in latticematched InGaAsN/GaAs, J. of Appl. Phys, vol.96, p.41764180, 2004.

B. N. Flanders, R. A. Cheville, D. Grischkowsky, and N. F. Scherer, Pulsed terahertz transmission spectroscopy of liquid CHCl 3 , CCl 4 , and their mixtures, J. Phys. Chem, vol.100, issue.29, p.1182411835, 1996.

M. Y. Frankel, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs, IEEE Transactions on Electron Devices, vol.37, issue.12, pp.12-224932498, 1990.
DOI : 10.1109/16.64523

M. Y. Frankel, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures ?, Appl. Phys. Lett, issue.26, p.7943134315, 2001.

J. R. Gao, J. N. Hovenier, Z. Q. Yang, J. J. Baselmans, A. Baryshev et al., Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer, Applied Physics Letters, vol.86, issue.24, p.244104, 2005.
DOI : 10.1063/1.1949724

F. E. Gardiol, Lossy Transmission Lines, 1987.

C. Gaubert, L. Chusseau, and D. Gasquet, Antennes plaquées fractales millimétriques et sub-millimétriques, 13ème Journées Nationales Microondes -Lille, 2003.

J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, and B. M. Keyes, Photocurrent of 1eV GaInNAs lattice-matched to GaAs, Journal of Crystal Growth, vol.195, issue.1-4, p.401408, 1998.
DOI : 10.1016/S0022-0248(98)00563-6

Y. A. Goldberg and N. M. Schmidt, Handbook series on Semiconductor parameters , vol2, World Scientic, 1999.

M. L. Gradziel, D. White, N. Trappe, R. J. Mahon, T. J. Finn et al., Modelling of millimetre-wave and terahertz imaging systems, Passive Millimetre-Wave and Terahertz Imaging and Technology , volume 5619 of Proc. of SPIE, p.154165, 2004.

M. C. Greenberg, K. L. Virga, and C. L. Hammond, Performance characteristics of the dual exponentially tapered slot antenna (detsa) for wireless communications applications, IEEE Transactions on Vehicular Technology, vol.52, issue.2, p.305311, 2003.
DOI : 10.1109/TVT.2003.808796

I. S. Gregory, C. Baker, W. R. Tribe, I. V. Bradley, M. J. Evans et al., Optimization of photomixers and antennas for continuous-wave terahertz emission, IEEE Journal of Quantum Electronics, vol.41, issue.5, p.41717728, 2005.
DOI : 10.1109/JQE.2005.844471

I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere et al., High resistivity annealed low-temperature GaAs with 100 fs lifetimes, Applied Physics Letters, vol.83, issue.20, p.8341994201, 2003.
DOI : 10.1063/1.1628389

I. S. Gregory, W. R. Tribe, B. E. Cole, C. Baker, M. J. Evans et al., Continuous-wave terahertz imaging using diode lasers, Terahertz and Gigahertz Electronics and Photonics III, p.139150, 2004.
DOI : 10.1117/12.542788

I. S. Gregory, W. R. Tribe, B. E. Cole, M. J. Evans, E. H. Lineld et al., Resonant dipole antennas for continuous-wave terahertz photomixers, Applied Physics Letters, vol.85, issue.9, p.16221624, 2004.
DOI : 10.1063/1.1789244

P. Grenier and J. F. Whitaker, Subband gap carrier dynamics in low-temperaturegrown gaas, Appl. Phys. Lett, vol.70, issue.15, 1997.

D. Grischkowsky, An ultrafast optoelectronic THz beam system : Applications to time-domain spectroscopy. Optics and Photonics News, p.2128, 1992.

D. Grischkowsky, S. Keiding, M. Van-exter, and C. Fattinger, Far-infrared timedomain spectroscopy with terahertz beams of dielectrics and semiconductors, J. Opt. Soc. Am. B, vol.7, issue.10, p.20062015, 1990.

P. Gu, F. Chang, M. Tani, K. Sakai, and C. L. Pan, Generation of coherent cwterahertz radiation using a tunable dual-wavelength external cavity laser diode, Jpn. J Appl. Phys, issue.11A, pp.38-1246, 1999.

S. Gupta, J. F. Whitaker, and G. A. Mourou, Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures, IEEE Journal of Quantum Electronics, vol.28, issue.10, p.2824642472, 1992.
DOI : 10.1109/3.159553

S. Gupta, J. F. Whitaker, S. L. Williamson, G. A. Mourou, L. Lester et al., High-speed photodetector applications of gaas and In x Ga 1?x As/GaAs grown by low-temperature molecular-beam epitaxy, J. Electron. Mat, issue.12, p.2214491455, 1993.

H. Harde, R. A. Cheville, and D. Grischkowsky, Terahertz studies of collisionbroadened rotational lines, J. Phys. Chem. A, vol.101, issue.20, p.36463660, 1997.

C. M. Herzinger, C. C. Lu, T. A. Detemple, and W. C. Chew, The semiconductor waveguide facet reectivity problem, IEEE J. of Quant. Elec, issue.8, p.2922732281, 1993.

C. Hönninger, R. Paschotta, M. Graf, F. Morier-genoud, G. Zhang et al., Ultrafast ytterbium-doped bulk lasers and laser ampliers, Appl. Phys. B, vol.69, p.317, 1999.

R. K. Homann, Handbook of microwave integrated circuits, Artech Houce, 1987.

J. B. Héroux, X. Yang, and W. I. Wang, GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 µm, Appl. Phys. Lett, vol.75, issue.18, p.27162718, 1999.

F. Huang, B. Schulkin, H. Altan, J. F. Federici, D. Gary et al., Terahertz study of 1,3,5-trinitro-s-triazine by time-domain and Fourier transform infrared spectroscopy, Applied Physics Letters, vol.85, issue.23, p.8555355537, 2004.
DOI : 10.1063/1.1829793

M. Hugues, B. Damilano, J. Duboz, and J. Massies, Optimum indium composition for (Ga,In)(N,As)???GaAs quantum wells emitting beyond 1.5??m, Applied Physics Letters, vol.88, issue.9, p.91111, 2006.
DOI : 10.1063/1.2180441

J. P. Ibbetson, J. S. Speck, A. C. Gossard, and U. K. Mishra, Observation of arsenic precipitates in GaInAs grown at low temperature on InP, Applied Physics Letters, vol.62, issue.18, p.6222092211, 1993.
DOI : 10.1063/1.109418

K. Imai, K. Kawase, H. Minamide, and H. Ito, Achromatically injection-seeded terahertz-wave parametric generator, Optics Letters, vol.27, issue.24, p.21732175, 2002.
DOI : 10.1364/ol.27.002173

K. Imai, K. Kawase, J. Schikata, H. Minamide, and H. Ito, Injection-seeded terahertz-wave parametric oscillator, Applied Physics Letters, vol.78, issue.8, p.7810261028, 2001.
DOI : 10.1063/1.1350420

T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito et al., InP-InGaAs Uni-Traveling-Carrier photodiodes, IEICE Trans. Elec, issue.6, pp.83-938949, 2000.

A. W. Jackson, J. P. Ibbetson, A. C. Gossard, and U. K. Mishra, Reduced thermal conductivity in low-temperature-grown GaAs, Applied Physics Letters, vol.74, issue.16, pp.2325-2327, 1999.
DOI : 10.1063/1.123839

M. B. Johnson, T. C. Mcgill, and N. G. Paulter, Carrier lifetimes in ion???damaged GaAs, Applied Physics Letters, vol.54, issue.24, p.24242426, 1989.
DOI : 10.1063/1.101096

L. Joulaud, Echantillonnage électro-optique à 1,55 µm pour la mesure de circuits rapides sur InP, 2004.

P. W. Juodawlkis, D. T. Mcintur, and S. E. Ralph, Ultrafast carrier dynamics and optical nonlinearities of low???temperature???grown InGaAs/InAlAs multiple quantum wells, Applied Physics Letters, vol.69, issue.26, p.6940624064, 1996.
DOI : 10.1063/1.117818

M. Kaminska, Z. Liliental-weber, E. R. Weber, T. George, J. B. Kortright et al., Structural properties of As???rich GaAs grown by molecular beam epitaxy at low temperatures, Applied Physics Letters, vol.54, issue.19, p.5418811883, 1989.
DOI : 10.1063/1.101229

M. Kaminska, E. R. Weber, Z. Liliental-weber, R. Leon, and Z. U. Rek, Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.7, issue.4, p.710713, 1989.
DOI : 10.1116/1.584630

R. Köhler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Lineld et al., Terahertz semiconductor-heterostructure laser, Nature, vol.417, p.156159, 2002.

T. Kitatani, K. Nakahara, M. Kondow, K. Uomi, and T. Tanaka, A 1.3-??m GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K, Japanese Journal of Applied Physics, vol.39, issue.Part 2, No. 2A, pp.39-86, 1999.
DOI : 10.1143/JJAP.39.L86

M. Kominami, D. M. Pozar, and D. H. Schaubert, Dipole and slot elements and arrays on semi-innite substrates, IEEE Trans. on Antennas and Propagation, issue.6, p.33600607, 1985.
DOI : 10.1109/tap.1985.1143638

M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki1 et al., A Novel Material of GaInNAs for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, pp.351273-1275, 1996.
DOI : 10.7567/SSDM.1995.D-8-1

M. Kourogi, B. Widiyatmoko, K. Imai, T. Shimizu, and M. Ohtsu, Accurate relative frequency cancellation between two independent lasers, Optics Letters, vol.24, issue.1, p.1618, 1989.
DOI : 10.1364/OL.24.000016

A. Krotkus, K. Bertulis, L. Dapkus, U. Olin, and S. Marcinkevi£ius, Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs, Applied Physics Letters, vol.75, issue.21, p.7533363338, 1999.
DOI : 10.1063/1.125343

A. Krotkus, K. Bertulis, M. Kaminska, K. Korona, A. Wolos et al., Be-doped low-temperature-grown GaAs material for optoelectronic switches, IEE Proc. Optoelectron, pp.111-115, 2002.
DOI : 10.1049/ip-opt:20020435

A. Krotkus, S. Marcinkevi£ius, J. Jasinski, M. Kaminska, H. H. Tan et al., Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low???temperature GaAs for optoelectronic applications, Applied Physics Letters, vol.66, issue.24, p.6633043306, 1995.
DOI : 10.1063/1.113738

S. Kumar, B. S. Williams, Q. Hu, and J. L. Reno, 1.9THz quantum-cascade lasers with one-well injector, Applied Physics Letters, vol.88, issue.12, p.121123, 2006.
DOI : 10.1063/1.2189671
URL : https://hal.archives-ouvertes.fr/in2p3-00148681

H. Künzel, J. Böttcher, R. Gibis, and G. Urmann, Material properties of Ga 0.47 In 0.53 As grown on InP by low-temperature molecular beam epitaxy, Appl. Phys. Lett, issue.11, p.6113471349, 1992.

S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas et al., InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs, Applied Physics Letters, vol.74, issue.5, p.729731, 1999.
DOI : 10.1063/1.123105

M. Lagadas, Z. Hatzopoulos, K. Tsagaraki, M. Calamiotou, C. Lioutas et al., The eect of arsenic overpressure on the structural properties GaAs grown at low temperature, J. Appl. Phys, issue.8, p.8043774383, 1996.

N. D. Lai, Étude théorique et expérimentale des lasers solides bi-fréquences dans les domaines GHz à THz, en régime continu ou impulsionnel. Applications micro-ondes, 2003.

P. T. Landsberg, Recombinaition in Semiconductors, 1991.

P. Laporta, S. Taccheo, M. Marano, O. Svelto, E. Bava et al., Amplitude and frequency stabilized solid-state lasers in the near infrared, Journal of Physics D: Applied Physics, vol.34, issue.16, p.23962407, 2001.
DOI : 10.1088/0022-3727/34/16/303

Z. Li, K. M. Dzurko, A. Delâge, and S. P. Mcalister, A self-consistent two-dimensional model of quantum-well semiconductor laser : Optimisation of a GRIN-SCH SQW laser structure, IEEE J. of Quant. Elec, vol.28, issue.4, p.792803, 1992.

V. Ligeret, F. Vermersch, S. Bansropun, M. Lecomte, M. Calligaro et al., Al-free active region (?? = 852nm) DFB laser diodes for atomic clocks and interferometry applications, Semiconductor Lasers and Laser Dynamics II, p.61840, 2006.
DOI : 10.1117/12.662723

W. Lin, R. W. Schoenlein, J. G. Fujimoto, and E. P. Ippen, Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs, IEEE Journal of Quantum Electronics, vol.24, issue.2, p.267275, 1988.
DOI : 10.1109/3.123

P. Liu, J. Williams, M. Y. Frankel, and R. D. Esman, Saturation characteristics of fast photodetectors, IEEE Transactions on Microwave Theory and Techniques, vol.47, issue.7, pp.1297-1303, 1999.
DOI : 10.1109/22.775469

X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-weber et al., Native point defects in low???temperature???grown GaAs, Applied Physics Letters, vol.67, issue.2, p.279281, 1995.
DOI : 10.1063/1.114782

A. J. Lochtefeld, M. R. Melloch, J. C. Chang, and E. S. Harmon, The role of point defects and arsenic precipitates in carrier trapping and recombination in low???temperature grown GaAs, Applied Physics Letters, vol.69, issue.10, p.6914651467, 1996.
DOI : 10.1063/1.116909

D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz et al., Anomalous hall-eect results in low-temperature molecular-beamepitaxial GaAs, : Hopping in a dense EL2 like band, Phys. Rev. B, issue.6, pp.423578-3581, 1990.

D. C. Look, D. C. Walters, M. Mier, C. E. Stutz, and S. K. Brierley, Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200C, Appl. Phys. Lett, issue.23, p.6029002902, 1992.

D. C. Look, D. C. Walters, G. D. Robinson, J. R. Sizelove, M. G. Mier et al., Annealing dynamics of molecular-beam epitaxial GaAs grown at 200C, J. Appl. Phys, vol.74, issue.1, p.306310, 1993.

A. Lucca, F. Druon, F. Balembois, P. Georges, P. Camy et al., Diode-pumped cw and fs laser based on Yb:CaF 2, Commercial and Biomedical Applications of Ultrafast Lasers V, p.186194, 2005.
DOI : 10.1117/12.593879

J. K. Luo, H. Thomas, D. V. Morgan, and D. Westwood, Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the eects of annealing, J. Appl. Phys, issue.7, p.7936223629, 1996.

B. Lyot, Le ltre monochromatiques polarisant et ses applications en physique solaire (annales d'astrophysique 1944), Sel. paper on Instr. in Astronomy, vol.87, p.331, 1993.

A. Maestrini, J. Ward, J. Gill, H. Javadi, E. Schlecht et al., A 1.7-1.9 THz local oscillator source, IEEE Microwave and Wireless Components Letters, vol.14, issue.6, p.253255, 2004.
DOI : 10.1109/LMWC.2004.828027

A. Maestrini, J. Ward, H. Javadi, C. Tripon-canseliet, J. Gill et al., Local oscillator chain for 1.55 to 1.75 THz with 100- µW peak power, IEEE Microw. Wireless Compon. Lett, issue.12, p.15871873, 2005.

L. Mahler, A. Tredicucci, R. Kohler, F. Beltram, H. E. Beere et al., High-performance operation of single-mode terahertz quantum cascade lasers with metallic gratings, Applied Physics Letters, vol.87, issue.18, p.181101, 2005.
DOI : 10.1063/1.2120901

J. Mangeney, L. Joulaud, P. Crozat, J. Lourtioz, and J. Decobert, Ultrafast response (? 2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 µm, Appl. Phys. Lett, issue.26, p.8355515553, 2003.

Y. Matsui, M. D. Pelusi, S. Arahira, and Y. Ogawa, Beat frequency generation up to 3.4THz from simultaneous two-mode lasing operation of sampled-grating DBR laser, Electronics Letters, vol.35, issue.6, p.472474, 1999.

S. Matsuura, G. A. Blake, A. A. Wyss, J. C. Pearson, C. Kadow et al., Design and characterisation of optical-THz phase-matched traveling-wave photomixers, Proc. SPIE, p.484492, 1999.

S. Matsuura, P. Chen, G. A. Blake, J. C. Pearson, and H. M. Pickett, A tunable cavity-locked diode laser source for terahertz photomixing, IEEE Transactions on Microwave Theory and Techniques, vol.48, issue.3, p.380387, 2000.
DOI : 10.1109/22.826836

S. Matsuura, M. Tani, and K. Sakai, Generation of coherent terahertz radiation by photomixing in dipole conductive antennas, Appl. Phys. Lett, vol.70, issue.5, p.559561, 1997.

K. A. Mcintosh, E. R. Brown, K. B. Nichols, O. B. Mcmahon, W. F. Dinatale et al., Terahertz photomixing with diode lasers in lowtemperature-grown GaAs, Appl. Phys. Lett, issue.26, p.6738443846, 1995.

K. A. Mcintosh, K. B. Nichols, S. Verghese, and E. R. Brown, Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs, Applied Physics Letters, vol.70, issue.3, p.354356, 1997.
DOI : 10.1063/1.118412

M. R. Melloch, N. Otsuka, J. M. Woodall, A. C. Warren, and J. L. Freeouf, Formation of arsenic precipitates in GaAs buer layers grown by molecular beam epitaxy at low substrate temperatures, Appl. Phys. Lett, vol.57, issue.15, p.15311533, 1990.

R. Mendis, C. Sydlo, J. Sigmund, M. Feiginov, P. Meissner et al., Tunable CW-THz system with a log-periodic photoconductive emitter, International Semiconductor Device Research Symposium, 2003, p.20412045, 2004.
DOI : 10.1109/ISDRS.2003.1272114

T. Merlet, Etude de photodetecteurs à ondes progressives adaptés à la detection hyperfréquence, 1997.

R. A. Metzger, A. S. Brown, L. G. Mccray, and J. A. Henige, Structural and electrical properties of low temperature GaInAs, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.11, issue.3, pp.798-801, 1993.
DOI : 10.1116/1.586792

D. Mittleman, Sensing with Terahertz Radiation, 2003.
DOI : 10.1007/978-3-540-45601-8

X. Mélique, A. Maestrini, R. Farré, P. Mounaix, M. Favreau et al., Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler, IEEE Transactions on Microwave Theory and Techniques, vol.48, issue.6, p.10001006, 2000.
DOI : 10.1109/22.904737

L. Morvan, M. Alouini, J. Bourderionet, J. L. Gouet, D. Dol et al., Widely tunable two-frequency Nd :YAG laser, Conference on Lasers and Electro-Optics (CLEO), p.23172319, 2005.
DOI : 10.1109/cleo.2005.202456

L. Morvan, D. Dol, J. Huignard, S. Blanc, M. Brunel et al., Dual-frequency laser at 1.53 µm for generating high-purity optically carried microwave signals up to 20 GHz, Conference on Lasers and Electro-Optics (CLEO), 2004.
URL : https://hal.archives-ouvertes.fr/hal-00674591

M. Naftaly, M. R. Stone, A. Malcoci, R. E. Miles, and I. Camara-mayorgai, Generation of CW terahertz radiation using two-colour laser with Fabry-Perot etalon, Electronics Letters, vol.41, issue.3, p.41128129, 2005.
DOI : 10.1049/el:20057532

F. Nakajima, T. Furuta, and H. Ito, High-power terahertz-wave generation from a resonant-antenna-integrated uni-traveling-carrier photodiode, 2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859), p.313316, 2004.
DOI : 10.1109/MWP.2004.1396904

H. Nakano, K. Hirose, I. Ohshima, and J. Yamauchi, An integral equation and its application to spiral antennas on semi-innite dielectric materials, IEEE Trans. on Antennas and Prop, vol.46, issue.2, p.267274, 1998.

A. Neto, S. Bruni, G. Gerini, and M. Sabbadini, The leaky lens : A broadband xed-beam leaky-wave antenna, IEEE Trans. on Antennas and Prop, issue.10, p.5332403246, 2005.

V. A. Odnoblyudov, A. Y. Egorov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev et al., Thermodynamic analysis of the MBE growth of GaInAsN, Semiconductor Science and Technology, vol.16, issue.10, p.16831835, 2001.
DOI : 10.1088/0268-1242/16/10/304

P. Omling, P. Silverberg, and L. Samuelson, Identication of a second energy level of EL2 in n-type GaAs, Phys. Rev. B, vol.38, issue.5, p.36063609, 1988.

M. A. Ordal, R. J. Bell, R. W. Alexander, J. L. Long, and M. R. Querry, Optical properties of Au, Ni, and Pb at submillimeter wavelengths, Applied Optics, vol.26, issue.4, p.744752, 1987.
DOI : 10.1364/AO.26.000744

V. Ortiz, M. Cher, X. Marcadet, S. Formont, D. Adam et al., Control of low-temperature-grown gaas for utltrafast switchning applications, Ultrafast Penomena in Semiconductors V, volume 4280 of Proc. of SPIE, p.202210, 2001.

E. D. Palik, Handbook of Optical Constants of Solids, 1998.

Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, and R. H. Wu, Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy, Applied Physics Letters, vol.77, issue.2, p.214216, 2000.
DOI : 10.1063/1.126928

M. J. Papastamatiou and G. J. Papaioannou, Recombination mechanism and carrier lifetimes of semi???insulating GaAs:Cr, Journal of Applied Physics, vol.68, issue.3, p.10941098, 1990.
DOI : 10.1063/1.346749

D. Pascal, F. Hobar-boudebous, S. Laval, C. Bru, J. P. Vilcot et al., Photoconducteurs sur GaAs : gain, bruit, structure optimale, Annales des Télécommunications, vol.40, pp.3-498104, 1985.

R. Paschotta, J. Nilsson, A. C. Tropper, and D. C. Hanna, Ytterbium-doped ber ampliers, IEEE J. of Quant. Elec, vol.33, issue.7, p.10491056, 1997.

E. Pavelescu, J. Wagner, H. Komsa, T. T. Rantala, M. Dumitrescu et al., Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing, Journal of Applied Physics, vol.98, issue.8, p.83524, 2005.
DOI : 10.1063/1.2112173

V. Petit, J. L. Doualan, P. Camy, V. Ménard, and R. Moncorgé, CW and tunable laser operation of Yb 3+ doped CaF 2, Appl. Phys. B, vol.78, p.681684, 2004.

E. Peytavit, Génération et propagation aux fréquences Térahertz, 2002.

E. Peytavit, S. Arscott, D. Lippens, G. Mouret, S. Matton et al., Terahertz frequency dierence from vertically integrated low-temperature-grown GaAs photodetector, Appl. Phys. Lett, issue.7, p.8111741176, 2002.

E. Peytavit, J. Lampin, T. Akalin, and L. Desplanque, Integrated terahertz TEM horn antenna, Electronics Letters, vol.43, issue.2, p.7375, 2007.
DOI : 10.1049/el:20073679
URL : https://hal.archives-ouvertes.fr/hal-00255785

E. Peytavit, G. Mouret, J. F. Lampin, S. Arscott, P. Masselin et al., Terahertz electromagnetic generation via optical frequency difference, IEE Proceedings - Optoelectronics, vol.149, issue.3, pp.82-87, 2002.
DOI : 10.1049/ip-opt:20020321
URL : https://hal.archives-ouvertes.fr/hal-00019548

S. S. Prabhu, S. E. Ralph, M. R. Melloch, and E. S. Harmon, Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy, Applied Physics Letters, vol.70, issue.18, p.7024192421, 1997.
DOI : 10.1063/1.118890

J. Pérez, Optique, géométrique, ondulatoire et polarisation, 1991.

J. Pérez, Optique, Fondements et applications, Dunod, 2000.

Q. Quraishi, M. Griebel, T. Kleine-ostmann, and R. Bratschitsch, Generation of phase-locked and tunable continuous-wave radiation in the terahertz regime, Optics Letters, vol.30, issue.23, p.32313233, 2005.
DOI : 10.1364/OL.30.003231

S. E. Ralph and D. Grischkowsky, Trap???enhanced electric fields in semi???insulators: The role of electrical and optical carrier injection, Applied Physics Letters, vol.59, issue.16, p.1972, 1974.
DOI : 10.1063/1.106153

G. M. Rebeiz, Millimeter-wave and terahertz intergrated circuit antennas, Proceedongs of the IEEE, p.17481770, 1992.

A. Rice, Y. Jin, X. F. Ma, X. Zhang, D. Bliss et al., Terahertz optical rectication from 110 zinc-blende crystals, Appl. Phys. Lett, vol.64, issue.11, p.13241326, 1994.

V. H. Rumsey, Frequency independent antennas, IRE International Convention Record, 1966.
DOI : 10.1109/IRECON.1957.1150565

D. B. Rutledge and M. Muha, Imaging antenna arrays, IEEE Transactions on Antennas and Propagation, vol.30, issue.4, p.535540, 1982.
DOI : 10.1109/TAP.1982.1142856

M. Ryzhii, M. Willander, I. Khmyrova, and V. Ryzhii, Terahertz response of metal-semiconductor-metal photodetectors, Journal of Applied Physics, vol.84, issue.11, pp.6419-6425, 1998.
DOI : 10.1063/1.368969

D. Saeedkia, R. R. Mansour, and S. Safavi-naeini, The interaction of laser and photoconductor in a continuous-wave terahertz photomixer, IEEE Journal of Quantum Electronics, vol.41, issue.9, p.11881196, 2005.
DOI : 10.1109/JQE.2005.852804

Y. Sasaki, A. Yuri, K. Kawase, and H. Ito, Terahertz?wave surface?emitted dierence frequency generation in slant?stripe?type periodically poled LiNbO 3 crystal, Appl. Phys. Lett, vol.81, issue.18, p.33233325, 2002.

F. Schnieder and W. Heinrich, Model of thin-lm microstrip line for circuit design, IEEE Trans. on Mirowaves Theory and Tech, vol.49, issue.1, p.104110, 2001.

S. M. Selby, Standard Mathematical Tables, Chemical Rubber CO, 1969.

C. V. Shank, R. L. Fork, B. I. Greene, F. K. Reinhart, and R. A. Logan, Picosecond nonequilibrium carrier transport in GaAs, Applied Physics Letters, vol.38, issue.2, p.104105, 1981.
DOI : 10.1063/1.92258

Y. C. Shen, T. Lo, P. F. Taday, B. E. Cole, W. R. Tribe et al., Detection and identification of explosives using terahertz pulsed spectroscopic imaging, Applied Physics Letters, vol.86, issue.24, p.241116, 2005.
DOI : 10.1063/1.1946192

J. Shi, K. Gan, Y. Chiu, Y. Chen, C. Sun et al., Metal-Semiconductor-Metal traveling-wave photodetectors, IEEE Photonics Technology Letters, issue.6, p.16623625, 2001.

W. Shi and Y. J. Ding, A monochromatic and high?power terahertz source tunable in the ranges of 2.7?38.4 and 58.2?3540 µm for variety of potential applications, Appl. Phys. Lett, vol.84, issue.10, p.16351637, 2004.

P. H. Siegel, Terahertz technology, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.3, p.910928, 2002.
DOI : 10.1109/22.989974

A. E. Siegman and V. Evtuhov, Twisted-mode technique for obtaining axially uniform energy density in a laser cavity, Appl. Opt, vol.4, p.142, 1965.

U. Siegner, R. Fluck, G. Zhang, and U. Keller, Ultrafast high???intensity nonlinear absorption dynamics in low???temperature grown gallium arsenide, Applied Physics Letters, vol.69, issue.17, p.6925662568, 1996.
DOI : 10.1063/1.117701

P. Silverberg, P. Omling, and L. Samuelson, Hole photoionization cross sections of EL2 in GaAs, Applied Physics Letters, vol.52, issue.20, p.16891691, 1988.
DOI : 10.1063/1.99020

F. W. Smith, H. R. Calawa, C. L. Chen, M. J. Mantra, and L. J. Mahoney, New MBE buer used to eliminate backgating in GaAs MESFETs, IEEE Elect. Dev. Lett, vol.9, issue.2, p.7780, 1988.

P. R. Smith, D. H. Auston, and M. C. Nuss, Subpicosecond photoconducting dipole antennas, IEEE Journal of Quantum Electronics, vol.24, issue.2, p.255260, 1988.
DOI : 10.1109/3.121

J. B. Soole and H. Schumacher, Transit-time limited frequency response of InGaAs MSM photodetectors, IEEE Transactions on Electron Devices, vol.37, issue.11, p.22852291, 1990.
DOI : 10.1109/16.62290

T. S. Sosnowski, T. B. Norris, H. H. Wang, P. Grenier, and J. F. Whitaker, Highcarrier-density electron dynamics in low-temperature-grown GaAs, Appl. Phys. Lett, issue.24, p.7032453247, 1997.

M. Stellmacher, Propriétés physique des matériaux III-V à non st÷chiométrie contrôlée, 1999.

M. Stellmacher, J. Nagle, J. Lampin, P. Santoro, J. Vaneecloo et al., Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under dierent growth and annealing conditions, J. Appl. Phys, issue.10, p.8860266031, 2000.

M. Stellmacher, J. Schnell, D. Adam, and J. Nagle, Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature, Applied Physics Letters, vol.74, issue.9, p.12391241, 1999.
DOI : 10.1063/1.123511

M. Tani, K. Lee, and X. Zhang, Detection of terahertz radiation with lowtemperature-grown GaAs-based photoconductive antenna using 1.55 µm probe, Appl. Phys. Lett, vol.77, issue.9, p.13961398, 2000.

B. Thomas, A. Maestrini, and G. Beaudin, A low-noise xed-tuned 300-360- GHz sub-harmonic mixer using planar schottky diodes, IEEE Microw. Wireless Compon. Lett, vol.15, issue.12, p.865867, 2005.

J. Liu and . Chyi, Device saturation behavior of submillimeter-wave membrane photonic transmitters, IEEE Photonics Tech. Lett, vol.16, issue.3, p.873875, 2004.

S. Trudel, Etude par double et triple diraction des rayons X, et modélisation , de la relaxation des contraintes dans des hétérostructures semiconductrices GaInAs/ GaAs et Al InAs/ GaAs à rampe de composition graduelle linéaire, 1997.

M. Van-exter, . Ch, D. Fattinger, and . Grischkowsky, Terahz time domain spectroscopy of water vapor, Optics Letters, vol.14, issue.20, p.11281130, 1989.

M. Van-exter and D. Grischkowsky, Characterization of an optoelectronic terahertz beam system, IEEE Transactions on Microwave Theory and Techniques, vol.38, issue.11, pp.1684-1691, 1990.
DOI : 10.1109/22.60016

S. Verghese, E. K. Duerr, K. A. Mcintosh, S. M. Duy, S. D. Calawa et al., A photomixer local oscillator for a 630-GHz heterodyne receiver. IEEE microwave and guided wave letters, p.245247, 1999.

S. Verghese, K. A. Mcintosh, and E. R. Brown, Optical and terahertz power limits in the low-temperature-grown GaAs photomixers, Applied Physics Letters, vol.71, issue.19, p.7127432745, 1997.
DOI : 10.1063/1.120445

D. Vignaud, J. F. Lampin, E. Lefebvre, M. Zaknoune, and F. Mollot, Electron lifetime of heavily Be-doped Ga 0.47 In 0.53 As as function of growth temperature and doping density, Appl. Phys. Lett, issue.22, p.8041514153, 2002.
URL : https://hal.archives-ouvertes.fr/hal-00148650

H. J. Von-bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, and C. E. Stutz, Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy, Phys. Rev. B, issue.7, p.4533723375, 1992.

A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. Mcintur et al., Arsenic precipitates and the semi-insulating properties of GaAs buer layers grown by low-temperature molecular beam epitaxy, Appl. Phys. Lett, vol.57, issue.13, p.13311333, 1990.

A. C. Warren, J. M. Woodall, P. D. Kirchner, X. Yin, F. Pollak et al., Role of excess As in low-temperature-grown GaAs, Physical Review B, vol.46, issue.8, p.4646174620, 1992.
DOI : 10.1103/PhysRevB.46.4617

D. H. Werner and S. Ganguly, An overview of fractal antenna engeineering research, IEEE Antennas and Propagation Mag, vol.45, issue.1, p.3857, 2003.

M. Weyers, M. Sato, and H. Ando, Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers, Japanese Journal of Applied Physics, vol.31, issue.Part 2, No. 7A, pp.31-853, 1992.
DOI : 10.1143/JJAP.31.L853

U. Willer, R. Wilk, W. Schippers, S. Böttger, D. Nodop et al., A novel THz source based on a two-color Nd :LSB microchip-laser and a LT-GaAsSb photomixer, Applied Physics B : Lasers and Optics, vol.87, issue.11, p.1316, 2006.

B. S. Williams, S. Kumar, H. Callebaut, and Q. Hu, Terahertz quantum-cascade laser at ? = 100 µm using metal waveguidefor mode connement, Appl. Phys. Lett, vol.83, issue.11, p.21242126, 2003.

S. B. Zhang and J. E. Northrup, Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion, Physical Review Letters, vol.67, issue.17, p.23392342, 1991.
DOI : 10.1103/PhysRevLett.67.2339