]. S. Campbell, D. C. Campbell, X. Gilmer, M. T. Wang, H. S. Hisich et al., MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics, IEEE Transactions on Electron Devices, vol.44, issue.1, p.104, 1997.
DOI : 10.1109/16.554800

]. A. Chandrakasan, W. Chandrakasan, F. Bowhill, and . Fox, Design of High-Performance Microprocessor Circuits, 2001.
DOI : 10.1109/9780470544365

J. A. Curless, R. Hallmark, W. J. Droopad, L. Ooms, S. Salem et al., Thin Solid Films, Tech. Int. Electron Devices Meet, pp.1324-130, 1957.

. Phys, ]. M. Letthomg, J. Hong, A. R. Kwo, J. P. Kortan et al., Science reports, J. Mat. Res. J. Mater. Res. J. mater. Res. Appl. Phys. Lett, vol.68, issue.82, pp.2965-1897, 1196.

]. T. Schroeder, T. L. Schroeder, J. Lee, C. Zegenhagen, P. Wenger et al., Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si(001), Applied Physics Letters, vol.85, issue.7, p.1229, 2004.
DOI : 10.1063/1.1771465

M. Alonso and E. J. Finn, Quantun and Statistical Physic

J. Kogure, . Sci, ]. K. Techkulkly, J. Kukly, M. Ihanus et al., A lanthanide Lanthology Part 1, A-L, Appl. Phys. Lett. Molycorp. Inc., Mountain View California IEDM Tech. Dig. Adv. Mater, vol.19, issue.15, pp.585-2342, 1993.

]. T. Okada, M. Okada, K. Shajahan, M. Sawada, . Ishidaono-]-h et al., Films, Japanese Journal of Applied Physics, vol.44, issue.4B, pp.2320-1832, 2001.
DOI : 10.1143/JJAP.44.2320
URL : https://hal.archives-ouvertes.fr/hal-01284377

]. C. Pecharroman, F. Pecharroman, J. Gracia, M. Holgado, A. Ocana et al., Determination of texture by infrared spectroscopy in titanium oxide???anatase thin films, Journal of Applied Physics, vol.93, issue.8, p.4634, 2003.
DOI : 10.1063/1.1560858

J. Peeters and L. Li, A new model for the plasma anodization of silicon at constant current, Journal of Applied Physics, vol.72, issue.2, pp.719-1646, 1992.
DOI : 10.1063/1.351858

]. R. Puthenkovilakam, Y. Puthenkovilakam, J. Lin, J. Choi, H. Lu et al., Effects of post???deposition annealing on the material characteristics of ultrathin HfO2 films on silicon, Journal of Applied Physics, vol.97, issue.2, p.23704, 2005.
DOI : 10.1063/1.1831543

J. C. Banerjee, . Lee, ]. A. Techramirez, J. Ramirez, . Phys et al., Tsougaris and C. Zelwer, Acta crystallogr [Srim] The TRIM software is available for free download on: www.srim.gov, Spectrochimica Acta 73A, pp.145-590, 1966.

P. Wang, B. E. Fejes, P. J. White, J. Tobin, . M. Wang-]-z et al., Acta crystallogr, Electrochem. Soc. Appl. Surf. Sci. Thin Solid Films Appl. Phys. Lett. J. Appl. Phys. J. Mater. Sci. Lett, vol.152, issue.18, pp.203-231, 1965.