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Approche du potentiel effectif pour la simulation Monte-Carlo du transport électronique avec effets de quantification dans les dispositifs MOSFETs

Abstract : Today, the MOSFET transistor reaches nanometric dimensions for which quantum effects cannot be neglected anymore. It is thus necessary to develop models able to precisely describe the physical phenomena of electronic transport, and to account for the impact of these effects on the performances of the nanometric transistors. In this context, this work concerns the introduction of the quantization effects into a semi-classical Monte Carlo code for the simulation of electronic transport in MOSFETs devices. With this aim in view, the use of a quantum corrected potential is well suited since this correction can be applied to various transistor architectures without a large increase of CPU time. First of all, we evaluate and identify the limits of the usual effective potential correction. This analysis leads us to propose a novel effective potential formulation based on the improvement of the electron wave-packet representation. Without source-drain bias, this formulation is shown to allow a realistic description of the quantum confinement effects in double-gate, SOI and bulk MOSFETs architectures. Then, comparisons with semi-classical Monte Carlo simulations highlight the impact of the quantum confinement effects on electronic transport in a nanometric double-gate MOSFET. Finally, our novel formulation of quantum corrected potential is validated by obtaining results similar to those of a Monte Carlo/Schrödinger coupled method.
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https://tel.archives-ouvertes.fr/tel-00165490
Contributor : Marie-Anne Jaud <>
Submitted on : Thursday, July 26, 2007 - 1:31:18 PM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM
Long-term archiving on: : Monday, September 24, 2012 - 11:25:21 AM

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  • HAL Id : tel-00165490, version 1

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Marie-Anne Jaud. Approche du potentiel effectif pour la simulation Monte-Carlo du transport électronique avec effets de quantification dans les dispositifs MOSFETs. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2006. Français. ⟨tel-00165490⟩

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