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(a) après une exposition de 1 L d'O 2 à température ambiante suivie d'un recuit à 1000 K. Courant tunnel I T = 2 nA ; Tension seuil : U B = -1,24 V. (b) après 20 cycles de 10 L d'exposition à l'oxygène suivie d'un recuit à 1000 K. Courant tunnel I T = 23 nA ; Tension seuil, p.30 ,
72 eV) de la surface Ni 3 Al(110) après recuit à 970 K suivi d'une oxydation à 970 K (exposition : 8 L d, pp.79-112 ,
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(b)Spectres RBS ( 4 He + 1,5 MeV, p.47 ,
(a) en géométrie random ; (b) en canalisation, avec alignement suivant l'axe [111], Spectres RBS ( 4 He + 1, p.61 ,
La figure est dessinée dans le plan (110), normal à la surface, p.63 ,
Le faisceau incident ( 4 He + à 500 keV) est aligné selon, Rendement de rétrodiffusion associé au volume du monocristal de Ni(111) nu ; ? Rendement de rétrodiffusion associé à la surface du monocristal de Ni, p.63 ,
82 eV) : (a) de la surface Ni(111) avant dépôt (enregistré à 300 K) ; (b) de 3 MC Al, p.66 ,
Ni(111) nu ; (b) dépôt de 3 MC Al/Ni(111) après recuit à 750, p.71 ,
He + à 1,5 MeV, ? = 101,8°, T = 300 K) en géométrie de canalisation suivant l'axe [110] du cristal de Ni pour un dépôt de 3 MC Al. Trait noir : après recuit à 300 K ; trait rouge : après recuit à 750 K, p.75 ,
12 MC Al/Ni(111) après dépôt à 130 K ; (c) de 12 MC Al/Ni(111) après recuit à 750 K (caractéristique de NiAl) ; (d) de 4 MC Al/Ni(111) après recuit à 750 K (caractéristique de Ni 3 Al), p.81 ,
) après recuit à 750 K (caractéristique d'un plan de Ni 3 Al(111)) ; (c) de 20 MC Al/Ni(111) après recuit à 750 K (caractéristique d'un plan de NiAl(110)). (d) Schématisation du diagramme (c), p.82 ,
des deux couches constituants la couche alliée : la couche interfaciale épitaxiée de Ni 3 Al(111) et un des trois variants de la couche de NiAl(110) (NiAl, Le plan de la figure est parallèle au plan (-110) du substrat de Ni(111) (et donc au plan (-110) de la couche de Ni 3 Al(111)) et coïncide avec le plan, p.91 ,
pour le dépôt de 108 MC Al/Ni(111) après recuit à 730 K pendant 15 minutes, p.94 ,
(a) dépôt de 3 MC Al/Ni(111) après recuit à 750 K ; (b) dépôt de 3, p.98 ,
8°) enregistrés à 300 K sur un dépôt de 3 MC Al Le faisceau incident ( 4 He + à 1,5 MeV) est parallèle à l'axe [110] du cristal de Ni. Trait noir : après recuit 300 K ; trait rouge : après recuit à 750 K ; trait vert : après recuit à 850, p.99 ,
82 eV) : (a) 3 MC Al/Ni(111) déposées à 130 K puis recuites à 750 K ; (b) 3 MC Al ,
111) nu ; (b) pour une couche ultramince de Ni 3 Al(111) formée sur Ni(111) (à partir d'un dépôt de 2 MC d'Al à 130 K suivi d'un recuit à 750 K pendant 15 minutes) ; (c) après oxydation à 300 K (P(O 2 ) = 10 ?6 torr, exposition 1000 L) suivie d'un recuit à 1000 K pendant 15 minutes, p.120 ,
E d = 850 keV, ? = 150°) : (a) Ta 2 O 5 /Si (référence NRA) contenant 970×10 15 O, 3×10 15 O/cm 2 . . . . . . . . . . 123, p.17 ,
(formée à partir d'un dépôt de 2 MC d'Al) ; (b) après oxydation à 300 K (P(O 2 ) = 10 ?6 torr, exposition 1000 L) suivie d'un recuit à 1000 K de la couche ultramince de Ni 3 Al(111) : obtention d'une couche ultramince d'alumine épitaxiée sur Ni(111). (c) Représentation de la maille associée au film d'oxyde (en rouge) sur un plan (111) de Ni. La maille associée au substrat de Ni(111) est représentée en trait blanc ; la relation entre la maille du substrat et la maille, Al, issue.111111, p.125 ,
He + à 1,5 MeV, ? = 101,8°) enregistrés à température ambiante en géométrie de canalisation suivant la direction Spectre vert : pour un dépôt de 13, p.40 ,
He + à 1,5 MeV, ? = 101,8°) enregistrés à température ambiante en géométrie de canalisation suivant la direction Spectre vert : pour un dépôt de 13, p.40 ,
98 eV) d'une couche ultramince d'alumine sur Ni(111) Cette couche a été obtenue après oxydation à température ambiante (P(O 2 ) = 10 ?6 torr, exposition 1000 L) suivie d'un recuit à 1000 K d'une couche ultramince de NiAl(110) formée sur Ni(111) à partir d'un dépôt de 13, p.128 ,
98 eV) d'une couche ultramince d'alumine sur Ni(111) Cette couche a été obtenue après oxydation vers 250 K (P(O 2 ) = 10 ?6 torr, exposition 1000 L) suivie d'un recuit à 1000 K de 7,5 MC d'Al déposé sur Ni(111), p.130 ,