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Effets d'irradiation et diffusion des produits de fission (césium et iode) dans le carbure de silicium

Abstract : Silicon carbide is envisaged as a cladding material for the nuclear fuel in the fourth generation reactors. The aim of this work is to study the capacity to retain fission products and the structure evolution of this material under the combined effects of temperature and irradiation. The low energy ion implantations and the incorporation of stable analogues of fission products (Cs and I) in single crystalline 6H-SiC samples were performed by using the ion implanter or the accelerator of the CSNSM. The high energy heavy ion irradiations were made at GANIL. The evolution of the implanted ion profiles and the crystal structure were studied by RBS and Channeling. Complementary information were obtained by using the UV-visible absorption spectroscopy. The low energy ion implantations at room temperature induce a fast structural damage in the crystal. On the other hand, it is possible to attain a small disorder rate in the crystal during implantation by increasing the implantation temperature (600 °C). The high energy heavy ion irradiations do not damage the SiC crystals. On the contrary, they cause an annealing of the disorder created by the low energy implantations. The implanted ions (I) do not diffuse during low or high energy ion irradiations at room temperature and at 600 °C. However, a diffusion of Cs ions was observed during a post-implantation annealing at 1300 °C. At this temperature, the crystal which had an extended amorphous layer starts to recover a single-crystal structure.
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Contributor : Aurégane Audren <>
Submitted on : Monday, July 9, 2007 - 5:25:17 PM
Last modification on : Tuesday, February 5, 2019 - 12:12:10 PM
Long-term archiving on: : Thursday, April 8, 2010 - 10:46:33 PM


  • HAL Id : tel-00161085, version 1


Aurégane Audren. Effets d'irradiation et diffusion des produits de fission (césium et iode) dans le carbure de silicium. Physique [physics]. Université de Caen, 2007. Français. ⟨tel-00161085⟩



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