III-Nitride, SiC, and Diamond Materials for Electronic Devices, Material Research Society Symposium Proceedings, pp.423-69, 1996. ,
Properties of Advanced SemiconductorMaterials GaN, pp.1-30, 2001. ,
Zone-boundary phonons in hexagonal and cubic GaN, Physical Review B, vol.55, issue.11, pp.7000-7004, 1997. ,
DOI : 10.1103/PhysRevB.55.7000
Electronic transport studies of bulk Zinc Blende and ,
Electron transport characteristics of GaN for high temperature device modeling, Journal of Applied Physics, vol.83, issue.9, pp.4777-4781, 1998. ,
DOI : 10.1063/1.367269
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN, Journal of Applied Physics, vol.81, issue.12, pp.7827-7834, 1997. ,
DOI : 10.1063/1.365392
HEMT, International Journal of High Speed Electronics and Systems, vol.14, issue.03, pp.738-744, 2004. ,
DOI : 10.1142/S0129156404002764
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN, Journal of Applied Physics, vol.88, issue.11, pp.6467-6475, 2000. ,
DOI : 10.1063/1.1309046
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1???xN, InxGa1???xN, and InxAl1???xN, Journal of Applied Physics, vol.88, issue.11, pp.6476-6482, 2000. ,
DOI : 10.1063/1.1309047
Theorical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model, IEEE Transaction on Electron Devices, vol.50, issue.2, pp.315-323, 2003. ,
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis, Applied Physics Letters, vol.75, issue.16, pp.2407-2409, 1999. ,
DOI : 10.1063/1.125029
Monte Carlo simulation of electron transport in the IIInitride wurtzite phase material system: Binary and ternaries, IEEE Trans. Electron Devices, vol.48, issue.3, pp.535-542, 2001. ,
MOLE FRACTION, International Journal of High Speed Electronics and Systems, vol.14, issue.03, pp.762-768, 2004. ,
DOI : 10.1142/S0129156404002806
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, J. Appl. Phys, vol.87, issue.1, pp.334-343, 2000. ,
Bruits et signaux parasites, Eds Dunod, 1999. ,
Semiconductor Surface Physics, p.207, 1957. ,
Criteria of Low-Noise Thick-Film Resistors, ElectroComponent Science and Technology, vol.4, issue.3-4, pp.171-177, 1977. ,
DOI : 10.1155/APEC.4.171
Low-frequency excess noise in metal—Silicon Schottky barrier diodes, IEEE Transactions on Electron Devices, vol.17, issue.7, pp.496-506, 1970. ,
DOI : 10.1109/T-ED.1970.17021
Flicker noise in metal semiconductor schottky barrier diodes due to multistep tunnelling processes, IEEE Transaction on Electron Devices, vol.18, pp.10-882, 1971. ,
Low-Frequency noise in schottky barrier diodes" Solid-States Electronics, pp.121-128, 1979. ,
Caractérisation et Modélisation du bruit basse fréquence de composant bipolaire micro-ondes: Application à la conception d'oscillateurs à faible bruit de phase ,
Low frequency noise of AlGaN/GaN HEMT grown on Al 2 O 3 , Si and SiC substrates, th Internationnal Conference on Noise and Fluctuation, ICNF 2005 Salamanca Spain, pp.299-302 ,
URL : https://hal.archives-ouvertes.fr/hal-01343434
1/f noise in MODFETs at low drain bias, IEEE Transactions on Electron Devices, vol.37, issue.10, pp.2250-2253, 1990. ,
DOI : 10.1109/16.59916
Floating-Body Effect in AlGaN, IEEE GaAs, 2002. ,
Flicker noise in GaN/Al 0,15 Ga 0,85 N doped channel heterostructure field effect transistors, IEEE Electron Device Lett, vol.19, pp.12-475, 1998. ,
Using low frequency noise characterisation of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction" Fluctuation and Noise, proc of SPIE, vol.5470, pp.296-306, 2004. ,
Carrier's transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements, 12th Gallium Arsenide and other Compound Semiconductors Application Symposium (GAAS'2004), pp.159-162, 2004. ,
Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors, Applied Physics Letters, vol.75, issue.14, pp.2064-206661, 1999. ,
DOI : 10.1063/1.124917
Utilisation du bruit basse fréquence comme indicateur de fiabilité de diodes, Application aux structures ZNER 1N4565, 2006. ,
Analyse et Techniques Numériques Université de Sherbrooke Faculté des Sciences Appliquées Ed, 1993. ,
1/f noise in MODFETs at low drain bias, IEEE Transactions on Electron Devices, vol.37, issue.10, pp.2250-2253, 1990. ,
DOI : 10.1109/16.59916
Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors, Journal of Applied Physics, vol.91, issue.5, pp.5-3318, 2002. ,
DOI : 10.1063/1.1445494
URL : https://hal.archives-ouvertes.fr/hal-00327051
A theory of the Hooge parameters of solid-state devices, IEEE Transactions on Electron Devices, vol.32, issue.3, pp.667-671, 1985. ,
DOI : 10.1109/T-ED.1985.21996
AlGaN/GaN High Electron Mobility Transistor (HEMT) Reliability, 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GaAs'2005), pp.265-268, 2005. ,
Low Frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate, 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GaAs'2005), pp.277-280, 2005. ,
URL : https://hal.archives-ouvertes.fr/hal-00154917
Source of non linearities in RF operation of AlGaN, GaN HFETs" WSM Advances in GaN HEMT Device Technology, Modeling and Applications, Microwave Theory and Technique Symposium, 2006. ,
Solid State Phenomena, pp.85-86, 2002. ,
Effect of deuterium diffusion on the electrical properties of AlGaN/GaN heterostructures, Material Research Society Symposium, 2005. ,
Origin of noise in AlGaN???GaN heterostructures in the range of 10???100MHz, Journal of Applied Physics, vol.99, issue.7, pp.73706-73712, 2006. ,
DOI : 10.1063/1.2188048
Bruit de fond dans les transistors à effet de champ et bipolaire pour les microondes, Thèse, Rapport LAAS N° 93042, 1993. ,
Deep centers in n-GaN grown by reactive molecular beam epitaxy, Applied Physics Letters, vol.72, issue.18 ,
DOI : 10.1063/1.121274
Nature of the 2,8eV photoluminescence band in Mg doped GaN, Applied Physics Letters, vol.11, pp.1326-1328, 1998. ,
Characterization of electron traps in n-GaN thin layers by deep-level transient spectroscopy using low-frequency capacitance measurements, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004., pp.222-225 ,
DOI : 10.1109/SIM.2005.1511423
Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures, Journal of Applied Physics, vol.92, issue.8, p.4730, 2002. ,
DOI : 10.1063/1.1508432
Investigation of flicker noise and deep-levels in GaN/AlGaN transistors, Journal of Electronic Materials, vol.74, issue.3, pp.297-301, 2000. ,
DOI : 10.1007/s11664-000-0066-8
On the low frequency noise mechanism in AlGaN/GaN HFET's, Semicond.Sci.Technol, vol.6, pp.589-593, 2003. ,
Power and temperature dependence of low frequency noise in AlGaN???GaN transmission line model structures, Journal of Applied Physics, vol.96, issue.10, pp.10-5625, 2004. ,
DOI : 10.1063/1.1805719
Low 1/f noise in AlGaN/GaN HEMTs on SiC substrates, Proceedings of the third international conference on Nitride Semiconductor (ICNS3), pp.176-201, 1999. ,
Generation-Recombinaison Noise in GaN/AlGaN Heterostructure Field Effect Transistor, IEEE Transaction on Electron Devices, pp.48-51, 2001. ,
Non linear noise modeling of a PHEMT device through residual phase Noise and low frequency noise measurements, IEEE Microwave Theory and Technique Symposium, pp.831-833, 2001. ,
Evaluation of noise parameter extraction methods, IEEE Transactions on Microwave Theory and Techniques, vol.41, issue.3, p.387, 1993. ,
DOI : 10.1109/22.223735
Etude du bruit basse fréquence de transistors HEMT AlGaN, Si et SiC" XIVe Journées Nationales Microondes (JNM'2005), p.4, 2005. ,
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers, IEEE Transactions on Microwave Theory and Techniques, vol.33, issue.12, pp.1383-1394, 1985. ,
DOI : 10.1109/TMTT.1985.1133229
A new empirical nonlinear model for HEMT and MESFET devices, IEEE Transactions on Microwave Theory and Techniques, vol.40, issue.12, pp.2258-2266, 1992. ,
DOI : 10.1109/22.179888
Extensions of the Chalmers nonlinear HEMT and MESFET model, IEEE Transactions on Microwave Theory and Techniques, vol.44, issue.10, pp.1664-1667, 1996. ,
DOI : 10.1109/22.538957
Development of Models for large RF Power Transistors including Temperature, Memory and Packaging Effects" WSM Advances in GaN HEMT Device Technology, Modeling and Applications, Microwave Theory and Technique Symposium, 2006. ,
On the largesignal modelling of AlGaN/GaN HEMTs and SiC MESFETs, 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GaAs'2005), pp.309-312, 2005. ,
RF Breakdown and large-signal modelling of AlGaN/GaN HFET's" Microwave Theory and Technique Symposium, pp.643-646, 2006. ,
Strongly Reduced Gate Lag in Undoped AlGaN/GaN HEMTs on Sapphire, IEEE Electron Device Letter, vol.6, pp.618-621, 2003. ,
A new method for determining the FET small-signal equivalent circuit, IEEE Transactions on Microwave Theory and Techniques, vol.36, issue.7, pp.1151-1159, 1988. ,
DOI : 10.1109/22.3650
Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol.71, issue.25, pp.71-3673, 1997. ,
DOI : 10.1063/1.120477
Determination of small-signal parameters of GaN-based HEMTs, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2000. ,
DOI : 10.1109/CORNEL.2000.902526
Nonlinear Device Model of Microwave Power GaN HEMTs for High Power-Amplifier Design, IEEE Transactions on Microwave Theory and Techniques, vol.52, issue.11, pp.2585-2592, 2004. ,
DOI : 10.1109/TMTT.2004.837196
Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.12, pp.2834-2842, 2002. ,
DOI : 10.1109/TMTT.2002.805187
Floating-Body Effects in AlGaN, 10th Gallium Arsenide and other Compound Semiconductors Application Symposium (GaAs'2002), pp.23-27, 2002. ,
Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs, IEEE Electron Device Letters, vol.17, issue.10, pp.473-475, 1996. ,
DOI : 10.1109/55.537079
Development of Models for large RF Power Transistors including Temperature, Memory and Packaging effects" WSM Advances in GaN HEMT Device Technology, Modeling and Applications, Microwave Theory and Technique Symposium, 2006. ,
4-Watt Ka-Band AlGaN/GaN Power Amplifier MMIC" Microwave Theory and Technique Symposium, 2006. ,
DOI : 10.1109/mwsym.2006.249737
20W GaN HPAs for Next Generation X-Band T/R-Modules" Microwave Theory and Technique Symposium, 2006. ,
Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design" Microwave Theory and Technique Symposium, pp.747-750, 2006. ,
Noise Assessment of AlGaN/GaN HEMTs on Si or SiC Substrates: Application to X-band Low Noise Amplifiers, 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GaAs'2005), pp.229-232, 2005. ,
URL : https://hal.archives-ouvertes.fr/hal-00126458
Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs, IEEE Transactions on Microwave Theory and Techniques, vol.53, issue.1, pp.55-65, 2005. ,
DOI : 10.1109/TMTT.2004.839336
Phase noise study of AlGaN/GaN HEMT X Band oscillator, Phys. Stat. Sol, vol.2, pp.2615-2618, 2005. ,
Oscillator integrated with Ba x Sr 1-x TiO 3 Thin Film, IEEE Microwave Theory and Technique Symposium, vol.3, pp.1509-1512, 2004. ,
A 10 GHz dielectric resonator oscillator using GaN technology, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), pp.1497-1500, 2004. ,
DOI : 10.1109/MWSYM.2004.1338858
URL : https://hal.archives-ouvertes.fr/hal-00183505
Design of a new X-band active resonator oscillator" Microwave and optical Technology Letters, pp.472-475, 2004. ,
A low phase noise X-band MMIC GaAs MESFET VCO, IEEE Microwave and Guided Wave Letters, vol.10, issue.8, pp.325-327, 2000. ,
DOI : 10.1109/75.862229
An 11 GHz 3-V SiGe Voltage Controlled Oscillator with Integrated Resonator, IEEE Journal of Solid-State circuits, vol.32, issue.9, pp.1451-1454, 1997. ,
An X-Band BiCMOS SiGe 0,35 µm Volatge Control Oscillator in Parallel and Reflection Topology and External Phase Noise Improvement Solution, IEEE Radio Frequency Integrated Circuits Symposium, pp.281-284, 2003. ,