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Modélisation de différentes technologies de transistors bipolaires à grille isolée pour la simulation d'applications en électronique de puissance

Rodolphe de Maglie 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Analysis and systems design in power electronics must taking into account of specific complex phenomena to each components of the system but also in agreement with its environment. Accurate description of a system needs for simulations sufficiently accurate models of all its components. In our study, the models based on the semiconductor physics make it possible to describe the behavior of the stored charge in the deep and low doped base in the bipolar devices. This fine description is essential to the good precision of our models because the evolution of the carriers in the base is indissociable of the in static and dynamic behaviors of the component. Thus, the analytical physical models of PiN diode, NPT or PT IGBT with planar or trench gate structure are presented then validated. The modeling of complex systems in power electronics is approached through two studies. The first deals with to the association of our semiconductor models and wiring model of an industrial power module (3300V /1200A). An analysis on imbalances between the different chips in parallel is given. The second study presents a innovating architecture resulting from the functional integration. This low losses improve the tradeoff between on-state drop voltage and turn-off transient energy in IGBT component. Its technological realization is presented through measurements.
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Submitted on : Monday, June 11, 2007 - 2:20:36 PM
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  • HAL Id : tel-00153597, version 1

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Rodolphe de Maglie. Modélisation de différentes technologies de transistors bipolaires à grille isolée pour la simulation d'applications en électronique de puissance. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2007. Français. ⟨tel-00153597⟩

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