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Contribution à la réalisation d'une Mémoire Magnétique Intégrée sur Silicium

Abstract : This work is focused on the study of the injection and the collection of spin-polarized electrons into silicon. Different studies were conducted whose principal results will be presented. In all these studies, a simple diode-like ferromagnetic metal/insulator/semiconductor (FM/I/S) structure is used. The first study aimed to investigate whether a magnetic “dead” layer is obtained at the ferromagnet/oxide barrier that could lead to spin depolarization of the injected electrons. In the second study, magnetic characterization of diodes that may be used for spin injection and collection were performed. The third study focused on the contamination of the insulator barrier and the silicon by the ferromagnetic metal. The results underline the importance of controlling the contamination in obtaining defect-free insulator barrier, a prerequisite to spin conservative direct tunnel transport process. In the last study, capacitance-voltage as well as current-voltage characteristics have been measured. The electrical results show that the mechanisms of transport through the insulator barrier are assisted by defects whose the origin is probably linked to the diffusion of the 3d metal through the insulator barrier. Finally, a silicon-based device was made and studied to attempt to detect a magnetoresistance signal.
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https://tel.archives-ouvertes.fr/tel-00153556
Contributor : Christophe Duluard <>
Submitted on : Monday, June 11, 2007 - 12:08:08 PM
Last modification on : Wednesday, November 4, 2020 - 2:48:51 PM
Long-term archiving on: : Monday, June 27, 2011 - 4:19:55 PM

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  • HAL Id : tel-00153556, version 1

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Christophe Duluard. Contribution à la réalisation d'une Mémoire Magnétique Intégrée sur Silicium. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨tel-00153556⟩

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