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Magnétorésistances et transfert de spin dans des hétérostructures tunnel à base de (Ga,Mn)As

Abstract : In the field of spintronics, the ferromagnetic semiconductor (Ga,Mn)As offers many advantages to improve our knowledge of tunnel magnetotransport properties. By using (Ga,Mn)As as ferromagnetic electrodes, we report here on the influence of the height and thickness of an (In,Ga)As barrier, as well as annealing effects on tunnel magnetoresistance (TMR). Variations of the tunneling current depending on the orientation of (Ga,Mn)As magnetization attributed to the anisotropy of the valence band were also studied (TAMR). In the framework of the 6x6 transfer matrices approach adapted to the kp theory, we have modelized those 2 phenomena, in good agreement with our experimental data. The replacement of the simple tunnel junction by a GaAs quantum well gives us an insight on the influence of the different subbands of (Ga,Mn)As on spin polarized transport. Finally we have shown that the magnetization of a thin magnetic (Ga,Mn)As layer can be reversed by a spin polarized current.
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https://tel.archives-ouvertes.fr/tel-00151311
Contributor : Marc Elsen <>
Submitted on : Sunday, June 3, 2007 - 11:23:43 PM
Last modification on : Wednesday, December 9, 2020 - 3:11:08 PM
Long-term archiving on: : Thursday, April 8, 2010 - 5:07:49 PM

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  • HAL Id : tel-00151311, version 1

Citation

Marc Elsen. Magnétorésistances et transfert de spin dans des hétérostructures tunnel à base de (Ga,Mn)As. Matière Condensée [cond-mat]. Université Pierre et Marie Curie - Paris VI, 2007. Français. ⟨tel-00151311⟩

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