Cramming More Components Onto Integrated Circuits, Proceedings of the IEEE, vol.86, issue.1, pp.114-117, 1965. ,
DOI : 10.1109/JPROC.1998.658762
Trends in optical lithography. Optics and Photonics News, 1996. ,
Analyse des mécanismes mis en jeu lors de l'´ elaboration par gravure plasma de structures de dimensions déca-nanométriques : Application au transistor CMOS ultime, Thèse de doctorat de l'Université Joseph Fourier, 2004. ,
Improving resolution in photolithography with a phase-shifting mask, IEEE Transactions on Electron Devices, vol.29, issue.12, pp.1828-1836, 1982. ,
DOI : 10.1109/T-ED.1982.21037
Wafer stepper trends. Semiconductor International, 1997. ,
Thin organic bottom antireflective coatings for 193 nm lithography, Advances in Resist Technology and Processing XIX, pp.1074-1084, 2002. ,
DOI : 10.1117/12.474183
Surface tension, adhesion and wetting of materials for photolithographic process, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.4, pp.2485-2492, 1996. ,
DOI : 10.1116/1.588757
The chemical behavior of positive working systems, Proceedings of Kodak Microelectronics Seminar, pp.116-122, 1976. ,
Chemical amplification resists : History and development within IBM, IBM J. Res. Develop, vol.41, p.69, 1997. ,
DOI : 10.1147/rd.441.0119
Principle of lithography, SPIE Optical Engineering Press, 2001. ,
The new, new limits of optical lithography, Emerging Lithographic Technologies VIII, pp.1-8, 2004. ,
DOI : 10.1117/12.546201
157 nm: Deepest deep-ultraviolet yet, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.17, issue.6, pp.173262-3266, 1999. ,
DOI : 10.1116/1.591137
Pushing the limits of lithography for IC production, International Electron Devices Meeting. IEDM Technical Digest, pp.9-13, 1997. ,
DOI : 10.1109/IEDM.1997.649433
Projection printing characterization, Proc. SPIE, pp.80-84, 1977. ,
DOI : 10.1117/12.955357
Understanding across-chip line-width variation: the first step toward optical proximity correction, Optical Microlithography X, pp.124-136, 1997. ,
DOI : 10.1117/12.276015
Corner rounding and line end shortening in optical lithography, Proc. SPIE, pp.83-92, 2000. ,
Phase-shifting masks gain an edge, IEEE Circuits and Devices Magazine, vol.9, issue.2, pp.28-35, 1993. ,
DOI : 10.1109/101.200850
<title>Contact performance with an attenuated phase shift reticle and variable partial coherence</title>, Optical/Laser Microlithography VIII, pp.524-531, 1995. ,
DOI : 10.1117/12.209282
Van den hove. NA/sigma optimization strategies for an advanced DUV stepper applied to 0, µm critical levels. Proc. SPIE, pp.320-332, 1997. ,
Depth of focus and resolution enhancement of i-line and deep-UV lithography using annular illumination, Optical/Laser Microlithography, pp.137-157, 1927. ,
DOI : 10.1117/12.150420
Sub-half micron lithography system with phase-shifting effect, Proc. SPIE, pp.92-104, 1992. ,
The history and potential of maskless e-beam lithography. Microlithography World, 2005. ,
Shaped e-beam lithography integration work for advanced ASIC manufacturing, Proc. SPIE, pp.607-618, 2002. ,
Status and issues of EPL, Photomask and Next-Generation Lithography Mask Technology XI, pp.880-889, 2004. ,
DOI : 10.1117/12.557818
Total performance of Nikon EB stepper R&D tool, Emerging Lithographic Technologies VIII, pp.468-477, 2004. ,
DOI : 10.1117/12.537008
OML: optical maskless lithography for economic design prototyping and small-volume production, Optical Microlithography XVII, pp.777-787, 2004. ,
DOI : 10.1117/12.537391
Extreme ultraviolet lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.16, issue.6, pp.3142-3149, 1998. ,
DOI : 10.1116/1.590453
Imprint of sub???25 nm vias and trenches in polymers, Applied Physics Letters, vol.67, issue.21, pp.3114-3116, 1995. ,
DOI : 10.1063/1.114851
Sub-10 nm imprint lithography and applications, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.15, issue.6, pp.2897-2904, 1997. ,
DOI : 10.1116/1.589752
Nano-compact disks with 400???Gbit/in2 storage density fabricated using nanoimprint lithography and read with proximal probe, Applied Physics Letters, vol.71, issue.21, pp.713174-3176, 1997. ,
DOI : 10.1063/1.120280
Characterization of 8-in. wafers printed by nanoimprint lithography, Microelectronic Engineering, vol.73, issue.74, pp.172-177, 2004. ,
DOI : 10.1016/S0167-9317(04)00094-2
Replication technology for photonic band gap applications, Optical Materials, vol.17, issue.1-2, pp.15-18, 2001. ,
DOI : 10.1016/S0925-3467(01)00073-8
Nanoembossing of thermoplastic polymers for microfluidic applications, Applied Physics Letters, vol.80, issue.19, pp.3614-3616, 2002. ,
DOI : 10.1063/1.1479202
Etude et caractérisation des films minces lors du procédé de lithographie par nanoimpression, Thèse de doctorat de l'Université Joseph Fourier, 2005. ,
Step and flash imprint lithography: a new approach to high-resolution patterning, Emerging Lithographic Technologies III, p.379, 1999. ,
DOI : 10.1117/12.351155
Imprint lithography for integrated circuit fabrication, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.21, issue.6, pp.2624-2631, 2003. ,
DOI : 10.1116/1.1618238
The evolution of the modern microscope, Proceedings fo the american society of microscopists, pp.25-47 ,
Apparatus for the photolithographic manufacture of intergrated circuit element, U.S. Patent, p.4509852, 1985. ,
The future of subhalf-micrometer optical lithography, Microelectronic Engineering, vol.6, issue.1-4, pp.31-51, 1987. ,
DOI : 10.1016/0167-9317(87)90015-3
Optical projection lithography using lenses with numerical apertures greater than unity, Microelectronic Engineering, vol.9, issue.1-4, pp.31-36, 1989. ,
DOI : 10.1016/0167-9317(89)90008-7
Fabrication of 0.2 ??m Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens, Japanese Journal of Applied Physics, vol.31, issue.Part 1, No. 12B, pp.4174-4177, 1992. ,
DOI : 10.1143/JJAP.31.4174
1/8 ??m optical lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.6, pp.3032-3035, 1992. ,
DOI : 10.1116/1.585966
The k 3 coefficient in nonparaxial ?/N A scaling equations for resolution, depth of focus, and immersion lithography, Journal of Microlithography, Microfabrication and Microsystems, vol.1, issue.1, pp.7-12, 2002. ,
Fundamentals of Optics, American Journal of Physics, vol.26, issue.4, 1976. ,
DOI : 10.1119/1.1996127
Simulation study of process latitude for liquid immersion lithography, Journal of Microlithography, Microfabrication and Microsystems, vol.3, issue.1, pp.52-60, 2004. ,
Benefits and limitations of immersion lithography, Journal of Microlithography, Microfabrication and Microsystems, vol.3, issue.1, pp.104-114, 2004. ,
Immersion lithography; its potential performance and issues, Optical Microlithography XVI, pp.724-733, 2003. ,
DOI : 10.1117/12.504599
Advantage and feasibility of immersion lithography, Journal of Micro/Nanolithography, MEMS, and MOEMS, vol.3, issue.1, pp.97-103, 2004. ,
DOI : 10.1117/1.1637593
The development of dioptric projection lenses for DUV lithography. IODM conf, 2002. ,
Feasibility of immersion lithography, Optical Microlithography XVII, pp.264-272, 2004. ,
DOI : 10.1117/12.536852
Full-field exposure tools for immersion lithography, Optical Microlithography XVIII, pp.655-668, 2005. ,
DOI : 10.1117/12.599352
Immersion lithography exposure systems: today's capabilities and tomorrow's expectations, Optical Microlithography XVIII, pp.710-724, 2005. ,
DOI : 10.1117/12.606799
Extending optical lithography with immersion, Optical Microlithography XVII, pp.285-305, 2005. ,
DOI : 10.1117/12.534009
Immersion liquids for lithography in the deep ultraviolet, Optical Microlithography XVI, pp.690-699, 2003. ,
DOI : 10.1117/12.485329
Resolution enhancement of 157 nm lithography by liquid immersion, Journal of Microlithography, Microfabrication and Microsystems, vol.1, issue.3, pp.225-228, 2002. ,
Measurement of the refractive index and thermo-optic coefficient of water near 193 nm, Proc. SPIE, pp.1742-1749, 2003. ,
Controlled contamination studies in 193-nm immersion lithography, Optical Microlithography XVIII, pp.148-153, 2005. ,
DOI : 10.1117/12.601473
Liquid immersion lithography: Why, how, and when?, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.22, issue.6, pp.222877-2881, 2004. ,
DOI : 10.1116/1.1802955
Immersion lithography fluids for high NA 193 nm lithography, Optical Microlithography XVIII, pp.630-637, 2005. ,
DOI : 10.1117/12.602533
Material design for immersion lithography with high refractive index fluid (HIF), Advances in Resist Technology and Processing XXII, pp.10-19, 2005. ,
DOI : 10.1117/12.599165
Amplification of the index of refraction of aqueous immersion fluids by ionic surfactants, Advances in Resist Technology and Processing XXII, pp.537-553, 2005. ,
DOI : 10.1117/12.606105
Nanocomposite liquids for 193 nm immersion lithography: a progress report, Advances in Resist Technology and Processing XXII, pp.847-850, 2005. ,
DOI : 10.1117/12.601479
Fluids and resists for hyper NA immersion lithography, Advances in Resist Technology and Processing XXII, pp.836-846, 2005. ,
DOI : 10.1117/12.600771
High refractive index immersion fluids for 193 nm immersion lithography, Optical Microlithography XVIII, pp.622-629, 2005. ,
DOI : 10.1117/12.600025
Second generation fluids for 193 nm immersion lithography, Optical Microlithography XVIII, pp.427-434, 2005. ,
DOI : 10.1117/12.606448
Analysis and improvement of defectivity in immersion lithography, Optical Microlithography XIX, pp.1531-1542, 2006. ,
DOI : 10.1117/12.656195
Improvement of watermark defect in immersion lithography: mechanism of watermark defect formation and its reduction by using alkaline-soluble immersion topcoat, Advances in Resist Technology and Processing XXIII ,
DOI : 10.1117/12.655517
Influence of the watermark in immersion lithography process, Advances in Resist Technology and Processing XXII, pp.818-826, 2005. ,
DOI : 10.1117/12.599314
Liquid immersion lithography: evaluation of resist issues, Advances in Resist Technology and Processing XXI, pp.21-33, 2004. ,
DOI : 10.1117/12.536576
Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography, Optical Microlithography XVIII, pp.243-253, 2005. ,
DOI : 10.1117/12.599792
Study of air-bubble-induced light scattering effect on image quality in 193-nm immersion lithography, Optical Microlithography XVII, pp.477-486, 2004. ,
DOI : 10.1117/12.537255
Anti-bubble topcoat for immersion lithography, Advances in Resist Technology and Processing XXII, pp.527-536, 2005. ,
DOI : 10.1117/12.599643
Extending optics to 50 nm and beyond with immersion lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.21, issue.6, pp.2794-2799, 2003. ,
DOI : 10.1116/1.1624257
Understanding the photoresist surface-liquid interface for ArF immersion lithography, Advances in Resist Technology and Processing XXII, pp.64-77, 2005. ,
DOI : 10.1117/12.601482
Evaluation of functional properties of imaging materials for water immersion lithography, Advances in Resist Technology and Processing XXII, pp.508-518, 2005. ,
DOI : 10.1117/12.600560
Study of barrier coats for application in immersion 193-nm lithography, Advances in Resist Technology and Processing XXII, pp.78-94, 2005. ,
DOI : 10.1117/12.601768
Strain-relieved, dislocation-free InxGa1???xAs???GaAs(001) heterostructure by nanoscale-patterned growth, Applied Physics Letters, vol.85, issue.18, pp.4181-4183, 2004. ,
DOI : 10.1063/1.1811799
Fabrication of an integrated nanofluidic chip using interferometric lithography, J. Vac. Sci. Technol. B, vol.21, pp.2941-2945, 2003. ,
Magnetic behavior of lithographically patterned particle arrays (invited), Journal of Applied Physics, vol.91, issue.10, pp.6848-6853, 2002. ,
DOI : 10.1063/1.1452247
Single-longitudinal-mode emission from interband cascade DFB laser with a grating fabricated by interferometric lithography, IEE Proceedings - Optoelectronics, vol.150, issue.4, pp.288-292, 2003. ,
DOI : 10.1049/ip-opt:20030613
Fabrication of photonic crystals for the visible spectrum by holographic lithography, Nature, vol.404, pp.53-56, 2000. ,
Midinfrared Resonant Magnetic Nanostructures Exhibiting a Negative Permeability, Physical Review Letters, vol.94, issue.3, p.37402, 2005. ,
DOI : 10.1103/PhysRevLett.94.037402
Holographic lithography for microcircuits, Proc. SPIE, pp.290-296, 1990. ,
DOI : 10.1117/12.17991
High spatial frequency evanescent wave holographic recording in photopolymers, Journal of Optics A: Pure and Applied Optics, vol.5, issue.2, pp.142-146, 2003. ,
DOI : 10.1088/1464-4258/5/2/311
Micro-optical technologies for measurement sensors and microsystems and optical fiber sensor technologies and applications : Large-field, high-resolution photolithography, 1997. ,
Effects of beam pointing instability on two-beam interferometric lithography, Optical Microlithography XIX, p.61542, 2006. ,
DOI : 10.1117/12.656698
Coherence properties of optical fields, Reviews of modern physics, vol.37, issue.2, pp.231-287, 1965. ,
Assembly of a 193-nm interferometer for immersion lithography: vibration effects on image contrast, Optical Microlithography XIX, p.61544, 2006. ,
DOI : 10.1117/12.652227
Imaging capabilities of resist in deep ultraviolet liquid immersion interferometric lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.22, issue.6, pp.223459-3464, 2004. ,
DOI : 10.1116/1.1824951
Development Status of High Performance Materials for Immersion Lithography, Journal of Photopolymer Science and Technology, vol.17, issue.4, pp.603-607, 2004. ,
DOI : 10.2494/photopolymer.17.603
Optical Lithography for the 32nm Node, Journal of Photopolymer Science and Technology, vol.18, issue.5, pp.579-586, 2005. ,
DOI : 10.2494/photopolymer.18.579
Hyper NA water immersion lithography at 193???nm and 248???nm, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.22, issue.6, pp.223439-3443, 2004. ,
DOI : 10.1116/1.1825018
Three-dimensional imaging of 30-nm nanospheres using immersion interference lithography, Proc. SPIE, pp.1563-1569, 2006. ,
Liquid immersion deep-ultraviolet interferometric lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.17, issue.6, pp.3306-3309, 1999. ,
DOI : 10.1116/1.591000
Immersion lithography at 193 nm with a Talbot prism interferometer, Proc. SPIE, pp.1573-1578, 2004. ,
Two beam interferometer using a solid-state 193-nm laser, International Symposium on immersion and 157 nm lithography, 2004. ,
Deep UV immersion interferometric lithography, Proc. SPIE, pp.667-678, 2003. ,
DOI : 10.1117/12.536772
Approaching the numerical aperture of water immersion lithography at 193-nm, Optical Microlithography XVII, pp.273-284, 2004. ,
DOI : 10.1117/12.537262
25 nm immersion lithography at 193 nm wavelength, Optical Microlithography XVIII, pp.141-147, 2005. ,
DOI : 10.1117/12.602414
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.165.5441
Early learning on hyper-NA lithography using two-beam immersion interference, Optical Microlithography XIX, p.61541, 2006. ,
DOI : 10.1117/12.659007
Achromatic holographic lithography in the deep ultraviolet, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.6, issue.1, pp.216-218, 1988. ,
DOI : 10.1116/1.584008
Achromatic holographic configuration for 100-nm-period lithography, Applied Optics, vol.31, issue.22, pp.314540-4545, 1992. ,
DOI : 10.1364/AO.31.004540
Large-area achromatic interferometric lithography for 100 nm period gratings and grids, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.6, pp.4167-4170, 1996. ,
DOI : 10.1116/1.588613
Interferometer based on four diffraction gratings, Journal of Scientific Instruments, vol.36, issue.5, pp.227-230, 1959. ,
DOI : 10.1088/0950-7671/36/5/306
Space-Invariant Holography with Quasi-Coherent Light, Applied Optics, vol.12, issue.8, p.1957, 1973. ,
DOI : 10.1364/AO.12.001957
Hyper high numerical aperture achromatic interferometer for immersion lithography at 193 nm, J ,
Formulation for stable and efficient implementation of the rigorous coupled-wave analysis of binary gratings, Journal of the Optical Society of America A, vol.12, issue.5, pp.1068-1076, 1995. ,
DOI : 10.1364/JOSAA.12.001068
Sub-10 nm Linewidth and Overlay Performance Achieved with a Fine-Tuned EBPG-5000 TFE Electron Beam Lithography System, Japanese Journal of Applied Physics, vol.39, issue.Part 1, No. 12B, pp.6836-6842, 2000. ,
DOI : 10.1143/JJAP.39.6836
Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.18, issue.6 ,
DOI : 10.1116/1.1319682
The structural transformation and properties of spin-on poly(silsesquioxane) films by thermal curing, Journal of Non-Crystalline Solids, vol.311, issue.3, pp.233-240, 2002. ,
DOI : 10.1016/S0022-3093(02)01373-X
Fabrication of high-numerical-aperture phase zone plates with a single lithography exposure and no etching, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.21, issue.6, pp.2956-2960, 2003. ,
DOI : 10.1116/1.1619957
Nanoscale topography control for the fabrication of advanced diffractive optics, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.21, issue.6, pp.2980-2984, 2003. ,
DOI : 10.1116/1.1622938
Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.6, pp.2896-2901, 2002. ,
DOI : 10.1116/1.1515311
Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.21, issue.2, pp.688-692, 2003. ,
DOI : 10.1116/1.1545754
100mm : fused silica wafers ,
FOX(R)-12 FLOWABLE OXIDE ,
Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.5, pp.2137-2148, 2002. ,
DOI : 10.1116/1.1511219
OPTOOL DSX : fluorine surface antifouling coating ,
AFM characterization of anti-sticking layers used in nanoimprint, Microelectronic Engineering, vol.83, issue.4-9, pp.851-854, 2006. ,
DOI : 10.1016/j.mee.2006.01.011
URL : https://hal.archives-ouvertes.fr/hal-00394748
Uniformity across 200???mm silicon wafers printed by nanoimprint lithography, Journal of Physics D: Applied Physics, vol.38, issue.1, pp.70-73, 2005. ,
DOI : 10.1088/0022-3727/38/1/012
URL : https://hal.archives-ouvertes.fr/hal-00385736
Transmission gratings ,
Excimers and excimer lasers, Applied Physics, vol.32, issue.2, pp.95-114, 1980. ,
DOI : 10.1007/BF00900671
Excimer lasers ,
Update on 193 nm immersion exposure tool, Litho Forum International SEMATEH, 2004. ,
Toward controlled resist line-edge roughness: material origin of line-edge roughness in chemically amplified positive-tone resists, Advances in Resist Technology and Processing XVII, pp.230-239, 2000. ,
DOI : 10.1117/12.388307
A study of 193-nm immersion lithography using novel high refractive index fluids, Microelectronic Engineering, vol.83, issue.4-9, pp.651-654, 2006. ,
DOI : 10.1016/j.mee.2005.12.028
Immersion liquid refractive index determination at 193.7 nm and characterization of liquid-top coat interaction by EPA, 2 nd International symposium on immersion lithography, 2005. ,
Challenges with hyper-NA (NA>1.0) polarized light lithography for sub ??/4 resolution, Optical Microlithography XVIII, pp.53-68, 2005. ,
DOI : 10.1117/12.599913
Imaging enhancements by polarized illumination: theory and experimental verification, Optical Microlithography XVIII, pp.734-750, 2005. ,
DOI : 10.1117/12.599626
Challenges in high NA, polarization, and photoresists, Optical Microlithography XV, pp.11-24, 2002. ,
DOI : 10.1117/12.474562
Liquid immersion lithography at 193 nm using a high-NA achromatic interferometer, Optical Microlithography XIX, p.61541, 2006. ,
DOI : 10.1117/12.654404
URL : https://hal.archives-ouvertes.fr/hal-00080602
Experimental Investigation of the Impact of LWR on Sub-100-nm Device Performance, IEEE Transactions on Electron Devices, vol.51, issue.12, pp.1984-1988, 2004. ,
DOI : 10.1109/TED.2004.839115
A study of the effects of image contrast and resist types upon line edge roughness (LER), Proc. SPIE, pp.357-365, 2002. ,
Measuring line roughness through aerial image contrast variation using coherent extreme ultraviolet spatial filtering techniques, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.23, issue.6 ,
DOI : 10.1116/1.2134717
Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.16, issue.6, pp.163689-3694, 1998. ,
DOI : 10.1116/1.590392
Acid generation and acid diffusion in photoresist films, Advances in Resist Technology and Processing IX, pp.94-103, 1992. ,
DOI : 10.1117/12.59751
The Mechanism of Phenolic Polymer Dissolution:??? A New Perspective, Macromolecules, vol.30, issue.16, pp.4656-4664, 1997. ,
DOI : 10.1021/ma9707594
Polarized light. Fundamentals and applications, Optical Engineering, 1992. ,
Microscopié electroniquè a balayage : Principe etéquipementetéquipement ,
Microscopiè a force atomique (AFM) ,
From CD to 3D sidewall roughness analysis with 3D CD-AFM, Metrology, Inspection, and Process Control for Microlithography XIX, pp.966-976, 2005. ,
DOI : 10.1117/12.599229
Etude duprobì eme inverse en diffractométrie spectroscopique : applicationàapplicationà la métrologie dimensionnelle en microélectronique, Thèse de doctorat de l'Institut National Polytechnique de Grenoble, 2005. ,