Etude des Propriétés Morphologiques, Electriques et Chimiques
de l'Interface Métal/Isolant et de leur Impact sur les Performances
de la Capacité TiN/Ta2O5/TiN

Abstract : Current scaling trend in microelectronic involves the introduction of metals and high-k dielectrics in MOS transistors and MIM capacitors manufacturing in order to maintain their electrical performances. Nevertheless, the integration of these materials must deal with some physical phenomena localized at the metal/insulator interface that can degrade the devices performances. As a result, the choice of materials cannot be done on the simple consideration of their intrinsic properties and necessarily passes by a careful analysis of the properties of the interface formed. We present in this study fine characterizations of the TiN/Ta2O5 interface properties as well as their impact on the performances of the MIM 5fF.mm-2 capacitor. We first present the impact of interfaces roughness on leakage-current characteristics of MIM capacitors. “In situ” simulations of the electric field in the device indicate that each interface topography can lead to asymmetrical MIM electrical behavior. Next, our analysis treats the fundamental properties which control metal layers work function. This study requires the use of a local probe (KFM) which allows to characterize the impact of metal films crystallography on work function. Finally, the effect on the barrier height of the TiN/Ta2O5 interface chemistry is presented. This study, carried out by X-ray and UV-ray photoelectrons spectroscopy, provides the complete band diagram of the TiN/Ta2O5/Si MIS structure. We report here large shifts of the vacuum level induced by dipoles at both the Si/Ta2O5 and Ta2O5/TiN interfaces.
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Nicolas Gaillard. Etude des Propriétés Morphologiques, Electriques et Chimiques
de l'Interface Métal/Isolant et de leur Impact sur les Performances
de la Capacité TiN/Ta2O5/TiN. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2006. Français. ⟨tel-00142484⟩

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