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Theses

Modélisation et réalisation de terminaisons de jonctions haute tension compatibles avec la technologie planar : les anneaux polarisés et la spirale de SIPOS

Abstract : This thesis deals with the breakdown capability of discrete power devices or integrated circuits. It presents a study about guard techniques which allows the breakdown capability of an ideal plane junction. We study two techniques of potential linearization: the biased rings and the spiral SIPOS. The work achieved here is about:
- comprehension and analysis of the static and dynamic state,
- determination of design rules: evaluation of critical parameters for a breakdown voltage of 1000V. The main parameters of this study are: the surface used, the complexity of the technological fabrication process, the sensibility of parameters to the technology (oxide charges),
- realisation of test devices. The main results obtained are: fabrication of diodes in the range of 600 to 1200 V, efficiency of protection about 95 % (biased rings and spiral SIPOS), insensitivity to oxide charges density, robustness of the technology, large tolerance of the design rules.
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https://tel.archives-ouvertes.fr/tel-00139694
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Submitted on : Tuesday, April 3, 2007 - 11:06:48 AM
Last modification on : Friday, January 10, 2020 - 9:08:08 PM
Long-term archiving on: : Saturday, May 14, 2011 - 3:36:13 AM

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  • HAL Id : tel-00139694, version 1

Citation

Corinne Mingues. Modélisation et réalisation de terminaisons de jonctions haute tension compatibles avec la technologie planar : les anneaux polarisés et la spirale de SIPOS. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1997. Français. ⟨tel-00139694⟩

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