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Modélisation des isolations axisymétriques basées sur l'utilisation des matériaux semi-conducteurs par couplage des éléments finis et des éléments de frontière

Abstract : The insulation high voltage based on semiconductor materials became a very widespread technique for the reduction of the strong constraints in electric field. It forms integral part of the new systems of insulation containing polymeric materials such as for example the high voltage cables with synthetic insulation. There is a great quantity of semiconductor products designed for the high voltage insulation, but their use remains rather empirical because of their double behavior conducting/insulator, of the nonlinear character of conductivity and the permittivity and their anisotropy. This thesis answers the growing interest of these materials in the industrial field. It relates to the modeling of their behavior using digital techniques. The selected procedure consists in coupling the boundary element method (BEM) and the finite element method (FEM). The first is well adapted to the modeling of the great fields with isotropic and uniform property whereas the second makes it possible to take into account non linearities and the anisotropy present in semiconductor materials. In order to model semiconductor materials having a conductivity which depends on the module of the electric field, a temporal diagram based on the method of the trapezoids for temporal integration and on the method of the fixed point for the resolution of nonthe linearities, were developed. The numerical validations show that the strong non linearities of exponential type, appearing at the time of the thunderbolts, can from now on be taken into account. Moreover, the good estimate of the normal field at the borders proved to be essential when conductivity is dependent on the module of the electric field. This good taking into account was allowed thanks to the use of BEM in the dielectric areas. Lastly, the use of BEM required the taking into account of the geometrical singularities in the presence of a semiconductor area. The equations being able to treat these cases known, of the numerical tests not being based on the equations treating the singularities in the electrostatic case were carried out, which made it possible to take into account certain cases of these singularities.
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  • HAL Id : tel-00139534, version 1

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Thierry Toledo. Modélisation des isolations axisymétriques basées sur l'utilisation des matériaux semi-conducteurs par couplage des éléments finis et des éléments de frontière. Autre. Ecole Centrale de Lyon, 2004. Français. ⟨tel-00139534⟩

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