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Croissance hétéroépitaxiale du SiC-3C sur substrats SiC hexagonaux; Analyses par faisceaux d'ions accélérés des impuretés incorporées

Abstract : Using silicon as substrate for growing 3C-SiC monocrystalline material generates too many defects in the layers due to lattice and thermal expansion mismatch. Though these difficulties are avoided by
using hexagonal SiC substrates, the random formation of 60° rotated domains in the 3C layers generate a high density of twins.
The use of vapour phase epitaxy for the growth did not allow reducing significantly the twin density
despite the optimization of the in situ surface preparation of the seeds. On the other hand, these defects were eliminated by using Vapor-Liquid-Solid mechanism which consists in feeding a Si-Ge melt with
propane.
The characterization of these twin-free layers showed excellent crystalline quality. Some of the
impurities incorporated during growth (Ge, Al, B, Sn) were successfully analysed using accelerated
ion beam techniques though the detection and quantification of these elements inside SiC thin films
are challenging.
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Submitted on : Tuesday, March 13, 2007 - 9:37:39 AM
Last modification on : Thursday, June 4, 2020 - 3:08:02 PM
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Maher Soueidan. Croissance hétéroépitaxiale du SiC-3C sur substrats SiC hexagonaux; Analyses par faisceaux d'ions accélérés des impuretés incorporées. Matériaux. Université Claude Bernard - Lyon I, 2006. Français. ⟨tel-00136231⟩

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