Design of high electron mobility devices with composite nitride chan- nels ,
Relationship between the optical properties and superconductivity of InN with high carrier concentration, Journal of Crystal Growth, vol.269, issue.1 ,
DOI : 10.1016/j.jcrysgro.2004.05.072
Crystal structure renement of AlN and GaN, Solid State Commun, p.815, 1977. ,
Rietveld renement for indium nitride in the 105-295K range, p.114, 2003. ,
Stability of the Wurtzite Structure, Physical Review B, vol.5, issue.10 ,
DOI : 10.1103/PhysRevB.5.4039
Optical band gap of indium nitride, Journal of Applied Physics, vol.59, issue.9 ,
DOI : 10.1063/1.336906
Indium nitride (InN): A review on growth, characterization, and properties, Journal of Applied Physics, vol.94, issue.5 ,
DOI : 10.1063/1.1595135
[18] R. Loudon. The Raman eect in crystals, Advances in Physics, p.423, 1964. ,
Plastic versus elastic mist relaxation in III-nitrides grown by molecular beam epitaxy ,
DOI : 10.1016/s0022-0248(98)00197-3
Indium nitride quantum dots grown by metalorganic vapor phase epi- taxy ,
MOVPE growth of InN lms and quantum dots ,
Raman study and theoretical calculations of strain in GaN quantum dot multilayers, Physical Review B, vol.73, issue.11, p.115313, 2006. ,
DOI : 10.1103/PhysRevB.73.115313
Infrared ellipsometry and Raman studies of hexagonal InN lms: correlation between strain and vibrational properties, Superlattices and Microstructures, p.573, 2004. ,
Structural properties of self-organized semiconductor nanostructures, Reviews of Modern Physics, vol.76, issue.3, p.725, 2004. ,
DOI : 10.1103/RevModPhys.76.725
Interdependance of strain and shape in self-assembled coherent InAs islands on GaAs, Varga. Coupling of plasmons to polar phonons in degenerate semiconductors. Phys. Rev., !% :A1896, p.222, 1965. ,
Polarization and Intensity of Raman Scattering from Plasmons and Phonons in Gallium Arsenide, Physical Review Letters, vol.19, issue.15, p.849, 1967. ,
DOI : 10.1103/PhysRevLett.19.849
Spectrométrie Raman des excitations élémentaires et de leur couplage dans les nitrures d'éléments III à large bande interdite Phonon structure of InN grown by atomic layer epitaxy, Solid State Commun, p.491, 1998. ,
Optical properties of Si-doped InN grown on sapphire ,
Room-temperature photoluminescence and resonance-enhanced Raman scattering in highly degenerate InN lms ,
DOI : 10.1063/1.1935031
Light scattering in solids, p.5 ,
Resonant Raman scattering from screened longitudinal optical phonons in EuTe, 46] N. D. Mermin. Lindhard Dielectric function in the relaxation-time approximation, p.209, 1973. ,
DOI : 10.1016/0038-1098(73)90227-5
Coupled plasmon-LO phonon modes and Lindhard-Mermin dielectric function of n-GaAs, Solid State Communications, vol.30, issue.11 ,
DOI : 10.1016/0038-1098(79)91165-7
Light scattering in solids, p.23 ,
Light scattering in solids, p.79 ,
Theoretical and Experimental Study of Raman Scattering from Coupled LO-Phonon-Plasmon Modes in Silicon Carbide, Physical Review B, vol.6, issue.6 ,
DOI : 10.1103/PhysRevB.6.2380
Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy, physica status solidi (b), vol.5, issue.2 ,
DOI : 10.1002/pssb.2221190219
-type InP, Physical Review B, vol.60, issue.8 ,
DOI : 10.1103/PhysRevB.60.5456
URL : https://hal.archives-ouvertes.fr/in2p3-00533343
Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p -type GaAs, Phys. Rev. B, p.5456, 1999. ,
Raman spectroscopic and Hall eect analysis of the free electron concentration in GaAs with ultrahigh silicon doping ,
Raman scattering by coupled LO-phonon-plasmon modes and forbidden TO-phonon Raman scattering in heavily doped p -type GaAs, Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy ,
Raman scattering by LO-phonon-plasmon coupled modes in p-type GaAs: Wave vector non conservation, Solid State Communications, vol.32, issue.5 ,
DOI : 10.1016/0038-1098(79)90470-8
Solid State Physics, p.340 ,
Holt-Saunders International Editions, p.39, 1976. ,
Elastic constants of gallium nitride, Journal of Applied Physics, vol.79, issue.6 ,
DOI : 10.1063/1.361236
Conduction Electrons and Optic Modes of Ionic Crystals, Physical Review Letters, vol.14, issue.14 ,
DOI : 10.1103/PhysRevLett.14.549
Elastic constants and related properties of tetrahedrally bonded BN ,
Light scattering in solids, p.463 ,
Infrared studies in to 1-15 micron region to 30 ,
Specic volume measurements of Cu, Mo, Pd, and Ag and calibration of the ruby R 1 uorescence pressure gauge from 0 ,
Ruby-spheres as pressure gauge for optically transparent high pressure cells, High Pressure Research, vol.56, issue.6, p.305, 2001. ,
DOI : 10.1063/1.365025
Electronic, optical, and structural properties of some wurtzite crystals, Physical Review B, vol.48, issue.7, p.4335, 1993. ,
DOI : 10.1103/PhysRevB.48.4335
Optical and structural properties of III-V nitrides under pressure, Physical Review B, vol.50, issue.7 ,
DOI : 10.1103/PhysRevB.50.4397
Consistent structural properties for AlN ,
DOI : 10.1103/physrevb.51.7866
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation Theoretical study of the relative stability of structural phases in group- III nitrides at high pressures, Phys. Rev. B, p.16612, 2000. ,
Properties of hexagonal ScN versus wurtzite GaN and InN, Physical Review B, vol.66, issue.20, p.201203, 2002. ,
DOI : 10.1103/PhysRevB.66.201203
Theoretical study of the stability of wurtzite, zinc-blende, NaCl and CsCl phases in group IIIB and IIIA nitrides, physica status solidi (b), vol.36, issue.10, p.2424, 2004. ,
DOI : 10.1002/pssb.200404910
Band structures and optical spectra of InN polymorphs: inuence of quasiparticle and excitonic eects, Phys. Rev. B, p.205106, 2005. ,
Determination of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements, Inorg. Mater. (USSR), p.1257, 1979. ,
Stability of the wurtzite-type structure under high pressure: GaN and InN, Physical Review B, vol.49, issue.1, p.14, 1994. ,
DOI : 10.1103/PhysRevB.49.14
Dynamique de réseau de nanostructures à base de nitrures d'éléments III à grande bande interdite : eets de l'anisotropie de la structure wurtzite, 2001. ,
Strain-related phenomena in GaN thin lms, Phys. Rev. B, p.17745, 1996. ,
X-ray observation of the structural phase transition of aluminium nitride under high pressure, Phys. Rev. B, p.10123, 1992. ,
Homogeneous strain deformation path for the wurtzite to rocksalt highpressure transition in GaN ,
electrons on the elastic constants, Physical Review B, vol.70, issue.3 ,
DOI : 10.1103/PhysRevB.70.035214
New high pressure phases of the III-V compounds AlN ,
Equation of state of the rocksalt phase of III???V nitrides to 72 GPa or higher, Journal of Physics and Chemistry of Solids, vol.58, issue.12 ,
DOI : 10.1016/S0022-3697(97)00150-9
Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure, Physical Review B, vol.45, issue.1 ,
DOI : 10.1103/PhysRevB.45.83
The membrane diamond anvil cell: a new device for generating continuous pressure and temperature variations, Res, p.77, 1988. ,
Optically monitored high-pressure gas loading apparatus for diamond anvil cells, High Pressure Research, vol.23, issue.4 ,
DOI : 10.1126/science.206.4422.1073
Quartz as a pressure sensor in the infrared, High Pressure Research, vol.21, issue.2, p.97, 2005. ,
DOI : 10.1080/08957950500097672
URL : https://hal.archives-ouvertes.fr/hal-00021856
Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN, Physical Review B, vol.69, issue.23 ,
DOI : 10.1103/PhysRevB.69.235207
Phonons in a strained hexagonal AlN ,
Interface optical-phonon modes and electron-interface-phonon interactions, wurtzite GaN/AlN quantum wells, p.14356, 1993. ,
Optical phonon modes in graded III???V nitride quantum wells, Solid State Communications, vol.135, issue.5, p.308, 2005. ,
DOI : 10.1016/j.ssc.2005.05.008
Encyclopedia of nanoscience and nanotechnology, p. 513, volume & Anisotropy and strain eects on lattice dynamics in nitride, Ed. H. S. Nalwa, 2003. ,
Raman spectroscopy as a tool for characterization of hexagonal GaN ,
Anisotropy eects on polar optical phonons in wurtzite AlN ,
Growth kinetics and optical properties of self-organized GaN quantum dots, Journal of Applied Physics, vol.83, issue.12 ,
DOI : 10.1063/1.367878
High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition, Applied Physics Letters, vol.80, issue.21 ,
DOI : 10.1063/1.1482416
GaN quantum dots density control by rf-plasma molecular beam epi- taxy ,
DOI : 10.1063/1.1645333
Nucleation and growth of GaN/AlN quantum dots. [133], Damilano, N. Grandjean, and J. Massies. Signature of GaN-AlN quantum dots by nonresonant Raman scatte- ring ,
Reduction of the internal electric eld in wurtzite a -plane GaN selfassembled quantum dots ,
Thermophysical properties of aluminium nitride ceramic, Physics of the Solid State, p.81, 1997. ,
Built-in electric-eld eects in wurtzite AlGaN ,
Radiative lifetime of a single electron-hole pair in GaN ,
URL : https://hal.archives-ouvertes.fr/hal-01304534
Coarsening of Self-Assembled Ge Quantum Dots on Si(001), Physical Review Letters, vol.80, issue.5 ,
DOI : 10.1103/PhysRevLett.80.984
10 1.2 Déplacements atomiques associés aux phonons optiques des cristaux de structure wurtzite, p.12 ,
InN wurtzite sous pression croissante jusqu'à la transition de phase, p.74 ,
échantillon étudié : boîtes quantiques de GaN sur une couche tampon d', p.116 ,
Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms, Physical Review B, vol.71, issue.10, p.104305, 2005. ,
DOI : 10.1103/PhysRevB.71.104305
URL : https://hal.archives-ouvertes.fr/hal-00540408
Raman scattering in large single indium nitride dots: Correlation between morphology and strain, Physical Review B, vol.68, issue.24, p.245308, 2003. ,
DOI : 10.1103/PhysRevB.68.245308
URL : https://hal.archives-ouvertes.fr/hal-00540458
Articles de conférence Mechanisms of Raman scattering in doped indium nitride C, Gil MRS Fall Meeting, pp.29-32, 2004. ,
Absorption and Raman scattering processes in InN lms and dots, Demangeot et J. Frandon International InN workshop, pp.16-20, 2003. ,
InN Nanostructures: Strain and Morphology, MRS Proceedings, vol.798, p.1420, 2003. ,
DOI : 10.1063/1.1501762
Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications, physica status solidi (c), vol.0, issue.7, pp.25-30, 2003. ,
DOI : 10.1002/pssc.200303523
URL : https://hal.archives-ouvertes.fr/hal-00539936
Communications orales (présentations personnelles) Congrès internationaux Raman study of strain and electrons in wurtzite InN C septembre 2005 (poster) Raman scattering by the longitudinal optical phonon in InN: wave-vectors non conserving mechanisms C, Chervin et A. Polian ICNS6 Pinquier, F. Demangeot, J. Frandon, M. Gaio, O. Briot, B. Maleyre, S. Ruenach et B. Gil MRS, pp.2851-2879, 2003. ,
août -3 septembre 2004 (oral) Participation à une école Lattice dynamics of nitrides nanostructures C, Pinquier, J. Frandon, F. Demangeot, B. Daudin, E. Bellet-Amalric et M. Kuball School of Physics on Nanoscience, pp.30-44, 2003. ,