M. Singh and J. Singh, Design of high electron mobility devices with composite nitride chan- nels

T. Inushima, T. Sakon, and M. Motokawa, Relationship between the optical properties and superconductivity of InN with high carrier concentration, Journal of Crystal Growth, vol.269, issue.1
DOI : 10.1016/j.jcrysgro.2004.05.072

H. Schulz and K. H. Thiemann, Crystal structure renement of AlN and GaN, Solid State Commun, p.815, 1977.

W. Paszkowickz, R. Cerny, and S. Krukowski, Rietveld renement for indium nitride in the 105-295K range, p.114, 2003.

P. Lawaetz, Stability of the Wurtzite Structure, Physical Review B, vol.5, issue.10
DOI : 10.1103/PhysRevB.5.4039

T. L. Tansley and C. P. Foley, Optical band gap of indium nitride, Journal of Applied Physics, vol.59, issue.9
DOI : 10.1063/1.336906

A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, Indium nitride (InN): A review on growth, characterization, and properties, Journal of Applied Physics, vol.94, issue.5
DOI : 10.1063/1.1595135

E. J. Wiley, . Sons, and . Wiley-interscience, [18] R. Loudon. The Raman eect in crystals, Advances in Physics, p.423, 1964.

G. Feuillet, B. Daudin, F. Widmann, J. L. Rouvière, and M. Arléry, Plastic versus elastic mist relaxation in III-nitrides grown by molecular beam epitaxy
DOI : 10.1016/s0022-0248(98)00197-3

O. Briot, B. Maleyre, and S. Ruenach, Indium nitride quantum dots grown by metalorganic vapor phase epi- taxy

B. Maleyre, O. Briot, and S. Ruenach, MOVPE growth of InN lms and quantum dots

A. Cros, N. Garro, J. M. Llorens, A. García-cristóbal, A. Cantarero et al., Raman study and theoretical calculations of strain in GaN quantum dot multilayers, Physical Review B, vol.73, issue.11, p.115313, 2006.
DOI : 10.1103/PhysRevB.73.115313

V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, M. Schubert et al., Infrared ellipsometry and Raman studies of hexagonal InN lms: correlation between strain and vibrational properties, Superlattices and Microstructures, p.573, 2004.

J. Stangl, V. Holý, and G. Bauer, Structural properties of self-organized semiconductor nanostructures, Reviews of Modern Physics, vol.76, issue.3, p.725, 2004.
DOI : 10.1103/RevModPhys.76.725

I. Kegel, T. H. Metzger, P. Fratzl, J. Peisl, A. Lorke et al., Interdependance of strain and shape in self-assembled coherent InAs islands on GaAs, Varga. Coupling of plasmons to polar phonons in degenerate semiconductors. Phys. Rev., !% :A1896, p.222, 1965.

A. Mooradian and A. L. Mcwhorter, Polarization and Intensity of Raman Scattering from Plasmons and Phonons in Gallium Arsenide, Physical Review Letters, vol.19, issue.15, p.849, 1967.
DOI : 10.1103/PhysRevLett.19.849

T. Shiraishi, V. Yu, and . Davydov, Spectrométrie Raman des excitations élémentaires et de leur couplage dans les nitrures d'éléments III à large bande interdite Phonon structure of InN grown by atomic layer epitaxy, Solid State Commun, p.491, 1998.

T. Inushima, M. Higashiwaki, and T. Matsui, Optical properties of Si-doped InN grown on sapphire

V. M. Naik, R. Naik, D. B. Haddad, J. S. Thakur, G. W. Auner et al., Room-temperature photoluminescence and resonance-enhanced Raman scattering in highly degenerate InN lms
DOI : 10.1063/1.1935031

G. Abstreiter, M. Cardona, and G. Güntherodt, Light scattering in solids, p.5

G. D. Holah, J. S. Webb, R. B. Dennis, and C. R. Pidgeon, Resonant Raman scattering from screened longitudinal optical phonons in EuTe, 46] N. D. Mermin. Lindhard Dielectric function in the relaxation-time approximation, p.209, 1973.
DOI : 10.1016/0038-1098(73)90227-5

G. Abstreiter, R. Trommer, M. Cardona, and A. Pinczuk, Coupled plasmon-LO phonon modes and Lindhard-Mermin dielectric function of n-GaAs, Solid State Communications, vol.30, issue.11
DOI : 10.1016/0038-1098(79)91165-7

A. Pinczuk and E. Burstein, Light scattering in solids, p.23

R. M. Martin and L. M. Falicov, Light scattering in solids, p.79

M. V. Klein, B. N. Ganguly, and P. J. Colwell, Theoretical and Experimental Study of Raman Scattering from Coupled LO-Phonon-Plasmon Modes in Silicon Carbide, Physical Review B, vol.6, issue.6
DOI : 10.1103/PhysRevB.6.2380

G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy, physica status solidi (b), vol.5, issue.2
DOI : 10.1002/pssb.2221190219

L. Artús, R. Cuscó, J. Ibáñez, N. Blanco, and G. González-díaz, -type InP, Physical Review B, vol.60, issue.8
DOI : 10.1103/PhysRevB.60.5456

URL : https://hal.archives-ouvertes.fr/in2p3-00533343

K. Wan and J. F. Young, Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p -type GaAs, Phys. Rev. B, p.5456, 1999.

M. Ramsteiner, J. Wagner, P. Hiesinger, K. Köhler, and U. Rössler, Raman spectroscopic and Hall eect analysis of the free electron concentration in GaAs with ultrahigh silicon doping

D. Olego, M. Cardona, M. Ramsteiner, O. Brandt, and K. H. Ploog, Raman scattering by coupled LO-phonon-plasmon modes and forbidden TO-phonon Raman scattering in heavily doped p -type GaAs, Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy

D. Olego and M. Cardona, Raman scattering by LO-phonon-plasmon coupled modes in p-type GaAs: Wave vector non conservation, Solid State Communications, vol.32, issue.5
DOI : 10.1016/0038-1098(79)90470-8

N. W. Ashcroft and N. D. Mermin, Solid State Physics, p.340

E. D. Crane, Holt-Saunders International Editions, p.39, 1976.

A. Polian, M. Grimsditch, and I. Grzegory, Elastic constants of gallium nitride, Journal of Applied Physics, vol.79, issue.6
DOI : 10.1063/1.361236

R. A. Cowley and G. Dolling, Conduction Electrons and Optic Modes of Ionic Crystals, Physical Review Letters, vol.14, issue.14
DOI : 10.1103/PhysRevLett.14.549

K. Kim, W. R. Lambrecht, and B. Segall, Elastic constants and related properties of tetrahedrally bonded BN

B. A. Weinstein and R. Zallen, Light scattering in solids, p.463

C. E. Wier, E. R. Lippincott, A. Van-valkenburg, and E. N. Bunting, Infrared studies in to 1-15 micron region to 30

H. K. Mao, P. M. Bell, J. W. Shaner, and D. J. Steinberg, Specic volume measurements of Cu, Mo, Pd, and Ag and calibration of the ruby R 1 uorescence pressure gauge from 0

J. Chervin, B. Canny, and M. Mancinelli, Ruby-spheres as pressure gauge for optically transparent high pressure cells, High Pressure Research, vol.56, issue.6, p.305, 2001.
DOI : 10.1063/1.365025

Y. Xu and W. Y. Ching, Electronic, optical, and structural properties of some wurtzite crystals, Physical Review B, vol.48, issue.7, p.4335, 1993.
DOI : 10.1103/PhysRevB.48.4335

N. E. Christensen and I. Gorczyca, Optical and structural properties of III-V nitrides under pressure, Physical Review B, vol.50, issue.7
DOI : 10.1103/PhysRevB.50.4397

A. F. Wright and J. S. Nelson, Consistent structural properties for AlN
DOI : 10.1103/physrevb.51.7866

C. Stamp, C. G. Van-de-walle, J. Serrano, A. Rubio, E. Hernández et al., Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation Theoretical study of the relative stability of structural phases in group- III nitrides at high pressures, Phys. Rev. B, p.16612, 2000.

N. Farrer, L. Bellaiche, and $. $. , Properties of hexagonal ScN versus wurtzite GaN and InN, Physical Review B, vol.66, issue.20, p.201203, 2002.
DOI : 10.1103/PhysRevB.66.201203

L. Mancera, J. A. Rodríguez, and N. Takeuchi, Theoretical study of the stability of wurtzite, zinc-blende, NaCl and CsCl phases in group IIIB and IIIA nitrides, physica status solidi (b), vol.36, issue.10, p.2424, 2004.
DOI : 10.1002/pssb.200404910

J. Furthmüller, P. H. Hahn, F. Fuchs, and F. Bechstedt, Band structures and optical spectra of InN polymorphs: inuence of quasiparticle and excitonic eects, Phys. Rev. B, p.205106, 2005.

A. U. Sheleg and V. A. Savastenko, Determination of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements, Inorg. Mater. (USSR), p.1257, 1979.

M. Ueno, M. Yoshida, A. Onodera, O. Shimomura, and K. Takemura, Stability of the wurtzite-type structure under high pressure: GaN and InN, Physical Review B, vol.49, issue.1, p.14, 1994.
DOI : 10.1103/PhysRevB.49.14

]. J. Gleize, Dynamique de réseau de nanostructures à base de nitrures d'éléments III à grande bande interdite : eets de l'anisotropie de la structure wurtzite, 2001.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager et al., Strain-related phenomena in GaN thin lms, Phys. Rev. B, p.17745, 1996.

M. Ueno, A. Onodera, O. Shimomura, and K. Takemura, X-ray observation of the structural phase transition of aluminium nitride under high pressure, Phys. Rev. B, p.10123, 1992.

S. Limpijumnong and W. R. Lambrecht, Homogeneous strain deformation path for the wurtzite to rocksalt highpressure transition in GaN

A. M. Saitta and F. Decremps, electrons on the elastic constants, Physical Review B, vol.70, issue.3
DOI : 10.1103/PhysRevB.70.035214

Q. Xia, H. Xia, and A. L. Ruo, New high pressure phases of the III-V compounds AlN

S. Uehara, T. Masamoto, A. Onodera, M. Ueno, O. Shimomura et al., Equation of state of the rocksalt phase of III???V nitrides to 72 GPa or higher, Journal of Physics and Chemistry of Solids, vol.58, issue.12
DOI : 10.1016/S0022-3697(97)00150-9

P. Perlin, C. Jauberthie-carillon, J. P. Itie, A. San-miguel, I. Grzegory et al., Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure, Physical Review B, vol.45, issue.1
DOI : 10.1103/PhysRevB.45.83

R. , L. Toullec, J. P. Pinceaux, and P. Loubeyre, The membrane diamond anvil cell: a new device for generating continuous pressure and temperature variations, Res, p.77, 1988.

B. Couzinet, N. Dahan, G. Hamel, and J. Chervin, Optically monitored high-pressure gas loading apparatus for diamond anvil cells, High Pressure Research, vol.23, issue.4
DOI : 10.1126/science.206.4422.1073

J. Chervin, C. Power, A. Polian, and V. Lemos, Quartz as a pressure sensor in the infrared, High Pressure Research, vol.21, issue.2, p.97, 2005.
DOI : 10.1080/08957950500097672

URL : https://hal.archives-ouvertes.fr/hal-00021856

M. P. Halsall, P. Harmer, P. J. Parbrook, and S. J. Henley, Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN, Physical Review B, vol.69, issue.23
DOI : 10.1103/PhysRevB.69.235207

J. Gleize, F. Demangeot, J. Frandon, M. A. Renucci, F. Widmann et al., Phonons in a strained hexagonal AlN

. Phys, . J. Rev, and . Shi, Interface optical-phonon modes and electron-interface-phonon interactions, wurtzite GaN/AlN quantum wells, p.14356, 1993.

E. L. Albuquerque, R. C. Vilela, E. F. Nobre, R. N. Costa-filho, V. N. Freire et al., Optical phonon modes in graded III???V nitride quantum wells, Solid State Communications, vol.135, issue.5, p.308, 2005.
DOI : 10.1016/j.ssc.2005.05.008

J. Frandon, J. Gleize, M. A. Renucci, J. Gleize, J. Frandon et al., Encyclopedia of nanoscience and nanotechnology, p. 513, volume & Anisotropy and strain eects on lattice dynamics in nitride, Ed. H. S. Nalwa, 2003.

V. Yu, A. N. Davydov, I. N. Smirnov, R. N. Goncharuk, M. P. Kyutt et al., Raman spectroscopy as a tool for characterization of hexagonal GaN

J. Gleize, M. A. Renucci, J. Frandon, and D. , Anisotropy eects on polar optical phonons in wurtzite AlN

F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouvière et al., Growth kinetics and optical properties of self-organized GaN quantum dots, Journal of Applied Physics, vol.83, issue.12
DOI : 10.1063/1.367878

M. Miyamura, K. Tachibana, and Y. Arakawa, High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition, Applied Physics Letters, vol.80, issue.21
DOI : 10.1063/1.1482416

J. Brown, F. Wu, P. M. Petro, and J. S. Speck, GaN quantum dots density control by rf-plasma molecular beam epi- taxy
DOI : 10.1063/1.1645333

C. Adelmann, B. Daudin, R. A. Olivier, G. A. Briggs, and R. E. Rudd, Nucleation and growth of GaN/AlN quantum dots. [133], Damilano, N. Grandjean, and J. Massies. Signature of GaN-AlN quantum dots by nonresonant Raman scatte- ring

N. Garro, A. Cros, J. A. Budagosky, A. Cantarero, A. Vinattieri et al., Reduction of the internal electric eld in wurtzite a -plane GaN selfassembled quantum dots

S. N. Ivanov, P. A. Popov, G. V. Egorov, A. A. Sidorov, B. I. Kornev et al., Thermophysical properties of aluminium nitride ceramic, Physics of the Solid State, p.81, 1997.

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt et al., Built-in electric-eld eects in wurtzite AlGaN

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet et al., Radiative lifetime of a single electron-hole pair in GaN
URL : https://hal.archives-ouvertes.fr/hal-01304534

F. M. Ross, J. Terso, and R. M. Tromp, Coarsening of Self-Assembled Ge Quantum Dots on Si(001), Physical Review Letters, vol.80, issue.5
DOI : 10.1103/PhysRevLett.80.984

.. Maille-primitive-de-la-structure-wurtzite, 10 1.2 Déplacements atomiques associés aux phonons optiques des cristaux de structure wurtzite, p.12

S. Raman and D. , InN wurtzite sous pression croissante jusqu'à la transition de phase, p.74

L. Schéma-de, échantillon étudié : boîtes quantiques de GaN sur une couche tampon d', p.116

F. Demangeot, C. Pinquier, J. Frandon, M. Gaio, and O. , Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms, Physical Review B, vol.71, issue.10, p.104305, 2005.
DOI : 10.1103/PhysRevB.71.104305

URL : https://hal.archives-ouvertes.fr/hal-00540408

F. Demangeot, C. Pinquier, J. Frandon, M. Caumont, O. Briot et al., Raman scattering in large single indium nitride dots: Correlation between morphology and strain, Physical Review B, vol.68, issue.24, p.245308, 2003.
DOI : 10.1103/PhysRevB.68.245308

URL : https://hal.archives-ouvertes.fr/hal-00540458

F. Pinquier, J. Demangeot, M. Frandon, O. Gaio, B. Briot et al., Articles de conférence Mechanisms of Raman scattering in doped indium nitride C, Gil MRS Fall Meeting, pp.29-32, 2004.

O. Briot, B. Maleyre, S. Ruenach, B. Gil, C. Pinquier et al., Absorption and Raman scattering processes in InN lms and dots, Demangeot et J. Frandon International InN workshop, pp.16-20, 2003.

F. Demangeot, J. Frandon, C. Pinquier, M. Caumont, O. Briot et al., InN Nanostructures: Strain and Morphology, MRS Proceedings, vol.798, p.1420, 2003.
DOI : 10.1063/1.1501762

O. Briot, B. Maleyre, S. Ruenach, C. Pinquier, and F. , Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications, physica status solidi (c), vol.0, issue.7, pp.25-30, 2003.
DOI : 10.1002/pssc.200303523

URL : https://hal.archives-ouvertes.fr/hal-00539936

S. Phys, C. Solidi, F. Pinquier, J. Demangeot, O. Frandon et al., Communications orales (présentations personnelles) Congrès internationaux Raman study of strain and electrons in wurtzite InN C septembre 2005 (poster) Raman scattering by the longitudinal optical phonon in InN: wave-vectors non conserving mechanisms C, Chervin et A. Polian ICNS6 Pinquier, F. Demangeot, J. Frandon, M. Gaio, O. Briot, B. Maleyre, S. Ruenach et B. Gil MRS, pp.2851-2879, 2003.

D. Raman-dans-inn-sous-pression-hydrostatique, C. Pinquier, F. Demangeot, J. Frandon, J. W. Pomeroy et al., août -3 septembre 2004 (oral) Participation à une école Lattice dynamics of nitrides nanostructures C, Pinquier, J. Frandon, F. Demangeot, B. Daudin, E. Bellet-Amalric et M. Kuball School of Physics on Nanoscience, pp.30-44, 2003.