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Étude Raman de semi-conducteurs nitrures
Couches minces et nanostructures

Abstract : The light emission of group-III nitride semiconductors arouses a great interest due to their optoelectronic applications. We analyzed their optical, vibrational, electronic and crystallographic properties, in particular by means of Raman spectroscopy. Typical systems we investigated are paragons of the state of art of group-III nitride growth: we considered InN microscopic islands and films, as well as GaN/AlN heterostructures such as superlattices and quantum dots.
We discussed strain relaxation processes in both islands and quantum dots, inelastic light scattering mechanisms involved in InN and lattice dynamics in nanostructures. The experimental aspect, especially under high pressure, constitutes an important part of this work.
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Contributor : Claire Pinquier <>
Submitted on : Friday, March 9, 2007 - 10:19:57 AM
Last modification on : Friday, January 10, 2020 - 9:10:04 PM
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  • HAL Id : tel-00135839, version 1



Claire Pinquier. Étude Raman de semi-conducteurs nitrures
Couches minces et nanostructures. Physique [physics]. Université Paul Sabatier - Toulouse III, 2006. Français. ⟨tel-00135839⟩



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