Skip to Main content Skip to Navigation

Modélisation mathématique du transport diffusif de charges partiellement quantiques.

Abstract : This thesis is concerned with the mathematical modeling and analysis
with the aim of implementing numerical simulations of the electrons
transport in nanoscale semiconductor devices.
In such devices like ultrashort double gate MOSFETs, the orders of
magnitude might not play the same role in each direction.
Electrons might be extremly confined in one or several directions.
Therefore a quantum model is necessary to describe the confinement.
In the non-confined direction(s), the transport is assumed to have a
classical nature. We present then adiabatic quantum/classical
Collisions occuring during the transport drive the electrons towards a
diffusive regime. The diffusive model is derived from a kinetic model
thanks to a diffusion limit. The mathematical analysis of this
diffusive limit and of the diffusive coupled model is presented. A
numerical simulation of the transport in a nanotransistor is obtained
with this model.
Document type :
Complete list of metadata
Contributor : Nicolas Vauchelet <>
Submitted on : Tuesday, March 6, 2007 - 4:23:10 PM
Last modification on : Friday, January 10, 2020 - 9:08:06 PM
Long-term archiving on: : Tuesday, April 6, 2010 - 10:05:49 PM


  • HAL Id : tel-00135114, version 1


Nicolas Vauchelet. Modélisation mathématique du transport diffusif de charges partiellement quantiques.. Mathématiques [math]. Université Paul Sabatier - Toulouse III, 2006. Français. ⟨tel-00135114⟩



Record views


Files downloads