B. Murari, Smart Power IC's Technologies and Applications, 1995.

B. J. Baliga, The future of power semiconductor device technology, Proceedings of the IEEE, pp.822-8320018
DOI : 10.1109/5.931471

B. Murari, Smart power technologies evolution, Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), pp.10-19, 2000.
DOI : 10.1109/IAS.2000.880960

A. Feybesse, Développement et optimisation par simulation de Transisor MOS verticaux de puissance adaptés au secteur automobile (batterie 42V), 2003.

D. Kahng and S. M. Sze, A Floating Gate and Its Application to Memory Devices, Bell System Technical Journal, vol.46, issue.6, p.1288, 1969.
DOI : 10.1002/j.1538-7305.1967.tb01738.x

R. Cuppens, C. Hartgring, J. Verwey, H. Peek, F. Vollebregt et al., A EEPROM for microprocessors and custom logic, IEEE J.Sol.St.Circ, vol.20, p.2603, 1985.

M. Ciao, A simple EEPROM cell using twin polysilicon thin film transistors, IEEE Trans. On Elect.Dev.Lett, vol.15, p.4, 1994.

W. D. Brown and J. E. Brewer, Nonvolatile semiconductor memory technology, IEEE PRESS, 1998.
DOI : 10.1109/9780470545409

B. Euzent, N. Boruta, J. Lee, and C. Jenq, Reliability aspects of a floating gate EEPROM, Proc. IRPS, pp.11-16, 1981.

J. J. Dwyer, Theory of Electrical Conduction and Breakdown in solids Dielectrics, 1973.

C. Chang, Dissertation for degree of Doctor of Philosophy, 1984.

Z. A. Weinberg, On tunneling in metal???oxide???silicon structures, Journal of Applied Physics, vol.53, issue.7, pp.5052-5058, 1982.
DOI : 10.1063/1.331336

J. Suné, M. Lanzoni, and P. Olivo, Temperature dependence of Fowler-Nordheim injection from accumulated n-type silicon into silicon dioxide, IEEE Transactions on Electron Devices, vol.40, issue.5, p.1017, 1993.
DOI : 10.1109/16.210213

B. Ricco and M. Fichetti, in the high field tunneling regime, Journal of Applied Physics, vol.55, issue.12, p.4322, 1984.
DOI : 10.1063/1.333044

G. Pananakakis, G. Ghibaudo, R. Kies, and C. Papadas, Temperature dependence of the Fowler???Nordheim current in metal???oxide???degenerate semiconductor structures, Journal of Applied Physics, vol.78, issue.4, pp.78-2635, 1995.
DOI : 10.1063/1.360124

R. H. Good and W. Muller, Field emission, hanbuch der Physik, 1956.

G. Salace, A. Hadjadj, C. Petit, and M. Jourdain, structures: Effect of the oxide thickness, Journal of Applied Physics, vol.85, issue.11, p.7768, 1999.
DOI : 10.1063/1.370583

M. O. Aboelfotoh, Schottky???barrier behavior of a Ti???W alloy on Si(100), Journal of Applied Physics, vol.61, issue.7, pp.612558-65, 1987.
DOI : 10.1063/1.337933

K. S. Kim and M. E. Lines, Temperature dependence of chromatic dispersion in dispersion???shifted fibers: Experiment and analysis, Journal of Applied Physics, vol.73, issue.5, pp.2069-74, 1993.
DOI : 10.1063/1.353152

D. Schoeder, Physical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models, Applied Physics Letters, vol.82, issue.25, pp.4510-4512
DOI : 10.1063/1.1587256

J. G. Simmons, Richardson-Schottky Effect in Solids, Physical Review Letters, vol.15, issue.25, p.967, 1965.
DOI : 10.1103/PhysRevLett.15.967

H. Nozawa and S. Kohyama, A Thermionic Electron Emission Model for Charge Retention in SAMOS Structure, Japanese Journal of Applied Physics, vol.21, issue.Part 2, No. 2, pp.111-112, 1982.
DOI : 10.1143/JJAP.21.L111

H. Nozawa, Y. Niitou, N. Matsukawa, J. Matsumaga, and S. Kohyama, Characteristic and reliabilityof the SEPROM cell, IEEE Trans. On Electron Dev, vol.10, pp.31-1413, 1984.

D. J. Di-maria and D. R. Kerr, Interface effects and high conductivity in oxides grown from polycrystalline silicon, Applied Physics Letters, vol.27, issue.9, p.505, 1975.
DOI : 10.1063/1.88536

H. Iizuka, F. Masuoka, T. Sato, and M. Ishikawa, Electrically alterable avalanche-injectiontype MOS read only memory with stacked gate structure (SAMOS) Quasi-breakdown of ultrathin gate oxide under high field stress, IEEE Trans on Electron Dev, vol.30, issue.4, pp.379-387605, 1976.

R. Yoshikawa and N. Matsukawa, EPROM and EEPROM cell structures for EPLD's compatible with single poly gate process, 1986.

J. Maszejian and N. Zamatsu, Behavior of the Si/SiO2 intergace observed by F-N tunnelling, J.Appl.Phys, vol.53, pp.559-567, 1982.

P. Olivo, High-field-induced degradation in ultra-thin SiO/sub 2/ films, IEEE Transactions on Electron Devices, vol.35, issue.12, pp.2259-2267, 1988.
DOI : 10.1109/16.8801

G. J. Hemink, K. Shimizu, S. Aritome, and R. Shirota, Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides, Proceedings of International Reliability Physics Symposium RELPHY-96, pp.117-121
DOI : 10.1109/RELPHY.1996.492070

D. J. Dumin and J. R. Maddux, Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides, IEEE Transactions on Electron Devices, vol.40, issue.5, p.986, 1993.
DOI : 10.1109/16.210209

J. Maserjian and N. Zamatsu, interface during Fowler???Nordheim tunneling, Journal of Vacuum Science and Technology, vol.20, issue.3, pp.743-746, 1982.
DOI : 10.1116/1.571448

M. S. Liang, S. Haddad, W. Cox, and S. Dagnina, Degradation of very thin gate oxide MOS devices under dynamic high field/current stress, pp.394-1986

K. Kobayashi, A. Teramoto, and M. Hirayama, Electron traps and excess current induced by hot-hole injection into thin SiO2 films, 33rd IEEE International Reliability Physics Symposium, pp.168-176, 1995.
DOI : 10.1109/IRPS.1995.363352

N. Matsukawa, S. Yamada, K. Ameniya, and H. Hazama, A hot hole-induced low-level leakage current in thin silicon dioxide films, IEEE Transactions on Electron Devices, vol.43, issue.11, pp.1924-1933, 1996.
DOI : 10.1109/16.543028

T. N. Nguyen, P. Olivo, and B. Ricco, A New Failure Mode of Very Thin (<50A) Thermal SiO2 Films, 25th International Reliability Physics Symposium, p.66, 1987.
DOI : 10.1109/IRPS.1987.362157

N. R. Mielke, New EPROM Data-Loss Mechanisms, 21st International Reliability Physics Symposium, pp.106-113, 1983.
DOI : 10.1109/IRPS.1983.361969

G. Crisenza, G. Ghidhini, S. Manzini, A. Modelli, and M. Tosi, Charge loss in EPROM due to ion generation and transport in interlevel dielectric, International Technical Digest on Electron Devices, pp.107-117, 1990.
DOI : 10.1109/IEDM.1990.237215

S. Tanaka, Alkali ion drift model for data retention in stacked gate structures, Journal of Applied Physics, vol.88, issue.6, p.3629, 2000.
DOI : 10.1063/1.1285957

E. Sakagami, N. Arai, H. Tsunoda, H. Egawa, Y. Yamaguchi et al., The impact of intermetal dielectric layer and high temperature bake test on the reliability of nonvolatile memory devices, Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94, pp.359-67, 1994.
DOI : 10.1109/RELPHY.1994.307812

R. Shiner, J. M. Caywood, and B. L. Euzent, Data rentention in EPROMS, IEEE IRPS, pp.238-281, 1980.

P. L. Hefley and J. W. Mc-pherson, The impact of an external sodium diffusion source on the reliability of MOS circuitry, IEEE IRPS, pp.167-72, 1988.

S. M. Gladstone and D. J. Dumin, Thickness dependence of thin oxide wearout, Sol.St. Electron, vol.42, pp.3-317, 1998.

T. Nishida and S. E. Thompson, Oxide field and thickness dependence of trap generation in 9???30 nm dry and dry/wet/dry oxides, Journal of Applied Physics, vol.69, issue.7, p.3986, 1991.
DOI : 10.1063/1.348914

K. Naruke, S. Taguchi, and M. Wada, Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness, Technical Digest., International Electron Devices Meeting, p.424, 1988.
DOI : 10.1109/IEDM.1988.32846

B. De-salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, and G. Reimbold, Study of stress induced leakage current by using high resolution measurements, Microelectronics Reliability, vol.39, issue.6-7, pp.6-7797, 1999.
DOI : 10.1016/S0026-2714(99)00103-1

M. Kimura and H. Koyama, Stress-induced low-level leakage mechanism in ultrathin silicon dioxide films caused by neutral oxide trap generation, Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94, pp.167-72, 1994.
DOI : 10.1109/RELPHY.1994.307841

D. A. Buchanan, A. D. Marwick, D. J. Dimaria, and L. Dori, Hot???electron???induced hydrogen redistribution and defect generation in metal???oxide???semiconductor capacitors, Journal of Applied Physics, vol.76, issue.6, p.3595, 1994.
DOI : 10.1063/1.357420

R. Rofan and C. Hu, Stress-induced oxide leakage, IEEE Electron Device Letters, vol.12, issue.11, p.632, 1991.
DOI : 10.1109/55.119221

D. J. Dumin, J. R. Cooper, J. R. Maddux, R. S. Scoot, and D. P. Wong, Low???level leakage currents in thin silicon oxide films, Journal of Applied Physics, vol.76, issue.1, pp.319-346
DOI : 10.1063/1.357147

S. Takagi, N. Yauda, and A. Toriumi, Experimental evidence of inelastic tunnelling and new I-V model for stress induced leakage current, IEDM, pp.323-326, 1996.

E. Rosenbaum and L. F. Register, Mechanism of stress-induced leakage current in MOS capacitors, IEEE Transactions on Electron Devices, vol.44, issue.2, p.317, 1997.
DOI : 10.1109/16.557724

S. Takagi, N. Yasuda, and A. Toriumi, A new I-V model for stress-induced leakage current including inelastic tunneling, IEEE Transactions on Electron Devices, vol.46, issue.2, p.348, 1999.
DOI : 10.1109/16.740901

S. Kamohara, D. Park, and C. Hu, Deep trap SILC model for nominal and weak oxides, pp.57-61, 1998.
DOI : 10.1143/jjap.47.6208

B. Ricco, M. Azbel, M. Ya, and M. H. Brodsky, Films, Physical Review Letters, vol.51, issue.19, pp.1795-1803, 1983.
DOI : 10.1103/PhysRevLett.51.1795

R. Moazzami and C. Hu, Stress-induced current in thin silicon dioxide films, International Technical Digest on Electron Devices Meeting, p.139, 1992.
DOI : 10.1109/IEDM.1992.307327

B. and D. Salvo, Etude du transport électrique et de la fiabilité des isolants des mémoires non volatiles à grille flottante, Thèse INPG, 1999.

M. Lanzoni, Evaluation of EEPROM data retention by field acceleration, Qual

A. Gehring, Modeling of retention time degradation die to inelastic trap-assisted tunneling in EEPROM devices, pp.43-1465, 2003.

A. Manabe, H. Nozoe, M. Uchida, K. Hidaka, and . Ogura, New data retention mechanism endurance stress on flash memory, 2000.

D. Ielmini, A. S. Spinelli, A. Lacaita, and A. Modelli, A statistical model for SILC in flash memories, IEEE Transactions on Electron Devices, vol.49, issue.11, pp.1955-61, 2002.
DOI : 10.1109/TED.2002.804730

L. Montagner, NVM Data Retention, Rapport interne Motorola, 2001.

R. M. Alexander, Accelerated Testing in FAMOS Devices - 8K EPROM, 16th International Reliability Physics Symposium, p.229, 1978.
DOI : 10.1109/IRPS.1978.362851

M. Herrmann and A. Schenk, Field and high???temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling, Journal of Applied Physics, vol.77, issue.9, p.4522, 1995.
DOI : 10.1063/1.359414

C. S. Pan, High temperature charge loss mechanism in a floating gate EPROM with an ONO interpoly stacked dielectric, IEEE Elect. Dev. Lett, vol.12, pp.12-713, 1991.

P. J. Kuhn, A. Hoefler, T. Harp, B. Hornung, R. Paulsen et al., A reliability methodology for low temperature data retention in floating gate non-volatile memories, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), pp.266-270, 2001.
DOI : 10.1109/RELPHY.2001.922912

D. J. Dimaria and M. V. Fischetti, Vacuum emission of hot electrons from silicon dioxide at low temperatures, Journal of Applied Physics, vol.64, issue.9, 1988.
DOI : 10.1063/1.341252

D. Ielmini, A. S. Spinelli, A. L. Lacaita, and A. Modelli, A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories, Microelectronic Engineering, vol.59, issue.1-4, pp.189-195
DOI : 10.1016/S0167-9317(01)00621-9

Y. Laghla, Elaboration et caractérisation de couches minces de silicium polycristallin déposées par LPCVD pour application photovoltaïque, Thèse LAAS soutenue en, p.3038, 1998.

A. Aboubacar, Réalisation et études expérimentale des cathodes à réseaux de pointes en silicium pour émission de charges et photoémission de champ en régime continu et pulsé, Thèse de l, 1993.

A. Chbihi and . Wahoudi, Approche théorique de champ à partir de semiconducteur dégénéré cas des pointes de Silicium faiblement dopé P, Thèse de l'Université Blaise Pascal- Clermont II soutenue en, 1996.

M. Boussoukaya, Electron sources, pp.90-91, 1990.
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