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Nanostructures III-V pour l'électronique de spin

Pascal Gallo 1
1 LAAS-PHOTO - Équipe Photonique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Self-organised growth of quantum dots seems to be one of the best methods to obtain nanostructures able to confine carriers in the three directions of space. Growth is performed by molecular beam epitaxy; this technique provides high quality crystals, coherently with their environment. However, its major drawback is that it generates randomly sized structures, which is detrimental for device applications. A solution to this odd is to pattern the substrate in order to create regularly spaced nucleation sites for the quantum dots. The technique employed to do so is nanoimprint, which prevents from creating non radiative recombination centers in the substrate. This work shows state of the art results of luminescence from nanoimprinted regrown structures. Quantum dots are here applied to spintronics, which principle is to use the spin of the carriers as a support of quantum information. Three major obstacles have to be overcome in this field; first, polarized carriers have to be injected in the semiconductor; second, the polarized carriers have to be transported through the material; finally, the carriers may recombine, providing polarized photons. In this thesis, we design a device that allows characterizing all these parameters: the spinLED. Quantum dots allow a particularly good efficiency in the conversion of polarized carriers into polarized photons. As the spin relaxation times of the carriers are short, about 100ps, it was necessary to adapt the spinLED structure to make it compatible with hyperfrequency measurements.
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https://tel.archives-ouvertes.fr/tel-00134772
Contributor : Emilie Marchand <>
Submitted on : Monday, March 5, 2007 - 1:41:28 PM
Last modification on : Thursday, June 10, 2021 - 3:01:43 AM
Long-term archiving on: : Tuesday, April 6, 2010 - 10:34:59 PM

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  • HAL Id : tel-00134772, version 1

Citation

Pascal Gallo. Nanostructures III-V pour l'électronique de spin. Micro et nanotechnologies/Microélectronique. INSA de Toulouse, 2006. Français. ⟨tel-00134772⟩

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