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VCSEL oxydés à base de GaAs émettant à 1.3 µm: conception, fabrication et caractérisation.

Abstract : This work deals with the design, the fabrication and the characterization of oxidized VCSELs on GaAs substrate. The aim of this study is to reach 1.3 μm for short range high rate transmission applications.
After describing the economical and historical context, we focus on the key points of VCSEL design : active material, doping of the Bragg reflectors, selective wet oxidation. We have realised and characterized VCSELs based on three different active materials : InGaAsN quantum wells, highly strained InGaAs quantum wells and In(Ga)As quantum dots. Their characterization revealed that their emission wavelegth exceeds 1270 nm and achieves 1300 nm for the highly strained InGaAs quantum wells. These lasers exhibit milliamps range threshold current and optical power of several hundreds of microwatts for InGaAsN quantum wells and In(Ga)As quantum dots, and deliver up to 1.77 mW for highly strained InGaAs quantum wells. Except some rare components, lasing emission becomes transverse multimode as the injected current increases. Especially highly strained InGaAs quantum well VCSELs present a specifc modal behavior and display unexpected oxide modes. To study these transverse modes we observe their spatial distribution by spectrally-resolved optical near-field microscopy. Understanding the origin of transverse modes in VCSEL is a first step toward their suppression in order to reach singlemode emission, compatible with the optical telecomminucation standards.
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Contributor : Emilie Pougeoise <>
Submitted on : Thursday, March 1, 2007 - 2:22:17 PM
Last modification on : Friday, October 23, 2020 - 4:35:22 PM
Long-term archiving on: : Tuesday, September 21, 2010 - 12:09:38 PM


  • HAL Id : tel-00134195, version 2




Emilie Pougeoise. VCSEL oxydés à base de GaAs émettant à 1.3 µm: conception, fabrication et caractérisation.. Physique Atomique [physics.atom-ph]. Université Joseph-Fourier - Grenoble I, 2006. Français. ⟨tel-00134195v2⟩



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