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propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InP

Abstract : This thesis deals with the understanding of InAs quantum dots on InP substrate.
Chapter 0 is a detailed introduction to quantum dots. This part presents the motivations for studying quantum dots, and especially in the InAs/InP system. Epitaxial growth principles are thus explained.
Chapter 1 presents a theoretical study of quantum dots on InP substrate. These dots are studied from a theoretical point of view, by a eight-band k•p calculation. The impact of the dot composition (InAs or InAsSb) and of the substrate orientation ((311)B or (100)) on quantum dots optical properties is analyzed for telecoms or gas detection applications between 1.5 and 5 µm.
In chapter 2, quantum dots are then studied experimentally. Various experimental spectroscopic setups have been used (photoluminescence, magneto-photoluminescence, absorption spectroscopy) in order to determine fundamental constants of our quantum dots. The absorption coefficient, exciton Bohr radius, effective mass, and binding energy are measured, as well as the separation between excited states transitions and ground state transition. It is then demonstrated that using a quaternary alloy InGaAsP is a judicious choice for laser applications.
The lateral coupling between quantum dots is studied both experimentally and theoretically in chapter 3. In the quaternary alloy InGaAsP, with optimised growth conditions, high quantum dot densities can be reached, with a good in-plane organisation. A new reciprocal space calculation method has been developed in order to simulate such a quantum dot lattice. These calculations predicts lateral coupling between dots for these quantum dot densities. Magneto-photoluminescence, photoluminescence and electroluminescence are used to study this lateral coupling. The impact of coupling on charge carrier redistribution is also discussed.
Finally, pump-probe experiments on InAs/InP quantum dots are presented in chapter 4. Decay times of quantum dots energy levels are measured. An interpretation of the measurements is given in term of exciton and biexciton lifetimes, and consequences for quantum dots-based devices are discussed.
Conclusions and prospects are also given, and a confrontation with existing literature is proposed in this manuscript.
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Submitted on : Thursday, February 22, 2007 - 11:50:27 AM
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  • HAL Id : tel-00132644, version 1


Charles Cornet. propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InP. Physique [physics]. INSA de Rennes, 2006. Français. ⟨tel-00132644⟩



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