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Contribution à la conception de convertisseurs de fréquence. Intégration en technologie arséniure de gallium et silicium germanium

Abstract : The current great development of spatial communication comes with the change of conception constraints of these systems. Indeed, the multiplicity of new spatial systems as well as public applications must always raise integration density and system performances but also have to satisfy reliability and production cost needs. Thus, our work deals with the study and the integration of microwave frequency converter which satisfies these imperatives. We first present mixers characteristics in order to classify the reported topologies with respect to their drawbacks and advantages. The second part of this work is dedicated to the conception of an original mixer's topology. Based on an analytical method of conception, using conversion matrix formalism, we first define generic rules of mixer conception and on the other hand we optimise the mixer performances. Finally, a great part of our investigation deals with the study of the non-linear stability of mixers, key point of our topology. The last part of this manuscript addresses the monolithic integration and the characterization of our mixer with two concurrent technologies : one based on high electron mobility field effect transistor on Gallium Arsenide and the other one based on heterojunction bipolar transistor Silicon/Silicon-Germanium. For the last technology, an effort was made on the conception of passive circuits acting at millimeter wave frequencies. The characterization of the resulting circuits demonstrates the validity of the theoretical part and the aptitude of Silicon-Germanium technology for millimetre-wave monolithic integration.
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https://tel.archives-ouvertes.fr/tel-00132419
Contributor : Emilie Marchand <>
Submitted on : Wednesday, February 21, 2007 - 1:16:59 PM
Last modification on : Friday, January 10, 2020 - 9:08:08 PM
Long-term archiving on: : Wednesday, April 7, 2010 - 12:25:43 AM

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  • HAL Id : tel-00132419, version 1

Citation

David Dubuc. Contribution à la conception de convertisseurs de fréquence. Intégration en technologie arséniure de gallium et silicium germanium. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2001. Français. ⟨tel-00132419⟩

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