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Conception et caractérisation de circuits intégrés en technologie BiCMOS SiGe pour application de télécommunication en bande X

Abstract : This memory addresses the investigation of the potentialities of the BiCMOS silicon germanium technology for the realization of low noise circuits in the X band range. The report is organized in three parts. Part I deals with a description of the general properties of a bipolar device. A description of a BiCMOS SiGe technology is presented. We end this part by the validation of the model provided by the foundery through electrical characterization up to 40 GHz. The second part of the report focuses on the design and the characterization of low noise amplifier in the X band range. A theoretical study has been done in order to determine the most appropriate bias and device. Two low noise amplifier topologies have been investigated based on conventional and folded cascode. From simulations, it has been demonstrated that the conventional cascode topology represents the best trade off with respect to the noise figure, gain, power consumption and linearity. We end the chapter by the characterization of the low noise amplifier. In the last part, we focus on the design of low phase noise oscillators at X band range based on SiGe technology. We have worked on the design of three topologies of microwave oscillator using integrated LC resonator. From theoretical investigations, a 10 GHz oscillator has been realized and measured. In the last part of this chapter, we have worked on the design of an original topology of low phase noise oscillator based on the degenerescence concept. As conclusion, this memory represents a contribution to the design and the characterization of low noise circuits at X band using BiCMOS SiGe technology.
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Submitted on : Monday, February 19, 2007 - 2:16:17 PM
Last modification on : Friday, January 10, 2020 - 9:08:08 PM
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  • HAL Id : tel-00131800, version 1

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Anthony Coustou. Conception et caractérisation de circuits intégrés en technologie BiCMOS SiGe pour application de télécommunication en bande X. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2001. Français. ⟨tel-00131800⟩

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