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Theses

Conception, réalisation et caractérisation de diodes laser InGaAsN/GaAs à
diaphragme d'oxyde pour les télécommunications optiques à 1,3μm.

Abstract : The works reported in this thesis concern the study of a multiple quantum well (QW)
InGaAsN laser diode emitting at 1.3μm, grown on GaAs substrate, and comprising a ridge structure
obtained by a selective lateral thermal wet oxidation of an AlAs layer (Alox). First of all, a
complete optimization study of the properties of the InGaAsN QW emission is carried out. This
study uses a model based on the band structure modelling of InGaAsN.
We deduce the parameters of two-dimensional structural design to obtain a 1.3μm laser
emission wavelength, presenting good thermal stability and high dynamic response compatible with
the optical access networks.
In the second time, after the development of the selective wet oxidation process, we present
a complete and reproducible technological realization process of ridge laser diodes with side
injection of the carriers and oxide diaphragm by taking account of the technological constraints of
the various stages.
The realization and the characterization of laser diodes constituted the last part of this work.
After validating the technological process in the AlGaAs/GaAs material system, we carry out a
comprehensive characterization of the components including 3QW InGaAsN active layers in order
to evaluate the potentialities of this new material system and to confirm the interest of the lateral
confinement by oxide layers to obtain stable single-mode components.
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Submitted on : Thursday, February 15, 2007 - 3:10:05 PM
Last modification on : Friday, January 10, 2020 - 9:08:08 PM
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  • HAL Id : tel-00131210, version 1

Citation

Benoit Messant. Conception, réalisation et caractérisation de diodes laser InGaAsN/GaAs à
diaphragme d'oxyde pour les télécommunications optiques à 1,3μm.. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2006. Français. ⟨tel-00131210⟩

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