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Croissance de diélectrique à forte permittivité par la technique MOCVD en phase liquide pulsée : Elaboration, et caractérisation de films de HfO2.

Abstract : MOS scaling allow an enhancement of the performance, the integration density and the integrated circuits cost. Today, the component shows fundamental limits. To continue improving the device performance, the integration of new materials is necessary. Since it exhibits high dielectric constant and large band gap, hafnium oxide is studied as an alternative to the conventional silicon oxide. The use of HfO2 is promising to improve the oxide thickness versus gate leakage current trade-off. In this context, this work deals with HfO2 deposition, characterization and integration by liquid pulsed MOCVD deposition technique. The injection system as the large process window enables the films growth under several crystalline phases. As a function of the phase, dielectric constant around 20 and 30 are obtained. This study also demonstrates existence of an amorphous to crystalline transition thickness and the nanocrystalline nature of the layers. These analyses open the way to non-destructive characterizations techniques that can be employed in clean room environment. Finally, this work allows the determination of a standard process with 1.1 nm EOT and 0.84 A/cm² density of leakage current which satisfy ITRS specifications for high performance applications.
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Contributor : Karen Dabertrand <>
Submitted on : Monday, February 12, 2007 - 9:24:46 AM
Last modification on : Wednesday, November 4, 2020 - 2:48:57 PM
Long-term archiving on: : Tuesday, April 6, 2010 - 11:48:49 PM

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Karen Dabertrand. Croissance de diélectrique à forte permittivité par la technique MOCVD en phase liquide pulsée : Elaboration, et caractérisation de films de HfO2.. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2006. Français. ⟨tel-00130390⟩

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