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Méthodologie de prédiction du niveau de robustesse d'une structure de protection ESD à l'aide de la simulation TCAD

Christophe Salamero 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : This work deals with a new method to predict ESD protection robustness with TCAD simulations and then reduce the silicon runs. This method can only be applied if a careful calibration of the simulation is firstly achieved (geometry and doping profiles). The special feature of our predictive methodology based on TCAD simulation is that the simulation is only computed within the temperature validity range of the physical models. Instead of using the temperature value as a criterion, temperature related parameters, i.e. impact ionization and thermally generated carriers, are monitored until maximum allowed temperature for the models and then extrapolated until their respective current contribution becomes equal which corresponds to the initiation of thermal breakdown. The methodology is validated on two Smart Power technologies with 0.35µm and 0.25µm minimum feature size with electrical measurement and failure analysis. Failure current is always predicted with a good accuracy compared to technology spreading. In addition, the methodology provides a significant simulation time speedup compared to classical methods based on a temperature criterion.
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  • HAL Id : tel-00126914, version 1

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Christophe Salamero. Méthodologie de prédiction du niveau de robustesse d'une structure de protection ESD à l'aide de la simulation TCAD. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2005. Français. ⟨tel-00126914⟩

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