I. Sommaire, .. Un-ion, and .. Et-le-range, 31 II.1.1. Pouvoir d'arrêt d'un ion dans la matière (LET) 31 II.1.2. Range ou parcours total d'un ion dans la matière, p.35

.. Les-types-d-'interaction-nucléaire, 40 II.2.2.3. Le facteur de réaction (Q) et l'énergie seuil (E seuil ) des réactions, p.44

V. Garelli, A. Grichine, A. Heikkinen, J. Johnson, M. Kallenbach et al., GEANT4 -A simulation toolkit, Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, p.250, 2003.
URL : https://hal.archives-ouvertes.fr/in2p3-00020246

K. C. Armstrong and . Chandler, HETC Monte-Carlo Nucleon-Meson Transport Code, Nucl.Sci.Eng, vol.49, p.110, 1972.

H. W. Bertini, Monte Carlo calculations on intranuclear cascade, 1963.

R. C. Bateman, G. L. Haight, E. Morgan, J. P. Bauge, P. Delaroche et al., Importance of isovector effects in reproducing neutron total cross section differences in the W isotopes, Physical Review C -Nuclear Physics, vol.67, issue.4, p.446061, 2003.

H. Duarte, Cascade Intranucléaire pour la simulation des réactions de spallation, 2000.

M. Girod, J. Libert, J. P. Delaroche, and P. Romain, Microscopic structure of superdeformed states in Th, U, Pu and Cm isotopes with Gogny force, The European Physical Journal A, vol.15, issue.1, p.209, 2002.
DOI : 10.1140/epja/i2001-10256-2
URL : https://hal.archives-ouvertes.fr/in2p3-00012381

G. Hubert, J. M. Palau, K. Castellani-coulie, M. C. Calvet, and S. Fourtine, Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs, IEEE Transactions on Nuclear Science, vol.48, issue.6, pp.1953-1959, 2001.
DOI : 10.1109/23.983156

X. Girod, P. Ledoux, D. G. Romain, K. Madland, P. K. Amos et al., Elastic neutron scattering at 96 MeV from 12C and 208Pb, Physical Review C -Nuclear Physics, vol.67, issue.3, p.316011, 2003.
URL : https://hal.archives-ouvertes.fr/in2p3-00020017

.. De-silicium, 70 III.3.1.1. Evolution de la densité des porteurs en fonction du temps pour différentes distances du point source, III.3.1, p.73

. Shaneyfelt, Charge Enhancement Effects in NMOS Bulk Transistors Induced by Heavy Ion Irradiation, IEEE Transactions on Nuclear Science, vol.51, issue.6, pp.3255-3262, 2004.

G. Gasiot, V. Ferlet-cavrois, J. Baggio, P. Roche, P. Flatresse et al., SEU sensitivity of bulk and SOE technologies to 14-MeV neutrons, IEEE Transactions on Nuclear Science, vol.49, issue.6, pp.3032-3037, 2002.
DOI : 10.1109/TNS.2002.805395

P. Gasiot, Etude de la sensibilité de technologies CMOS/Bulk et CMOS/SOI Partiellement Désertée très largement sub-microniques dans l'environnement radiatif terrestre, PhD, 2004.

K. Hirose, H. Saito, S. Fukuda, Y. Kuroda, S. Ishii et al., Analysis of body-tie effects on SEU resistance of advanced FD-SOI SRAMs through mixed-mode 3-D Simulations, IEEE Transactions on Nuclear Science, vol.51, issue.6, p.3349, 2004.
DOI : 10.1109/TNS.2004.839513

]. L. Hite, H. Lu, T. W. Houston, D. S. Hurta, and W. E. Bailey, An SEU resistant 256 K SOI SRAM, IEEE Transactions on Nuclear Science, vol.39, issue.6, pp.2121-2125, 1992.
DOI : 10.1109/23.211411

. B. Kuang-1997-]-j and . Kuang, SRAM Bitline Circuits on PD SOI: Advantages and Concerns, IEEE Journal of Solid State Circuits, vol.32, issue.6, 1997.

]. G. Masetti, M. Severi, and S. Solmi, Modelling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus-, and Boron-Doped Silicon, IEEE Trans. Electron Devices, vol.30, issue.7, pp.746-769, 1983.

]. L. Massengill, SEU Modeling and Prediction Techniques", présenté à IEEE Nuclear and Space Radiation Effects Conference Short Course, 1993.

]. O. Musseau, J. L. Leray, V. Ferlet-cavrois, Y. M. Coic, and B. Giffard, SEU in SOI SRAMs-a static model, SEU in SOI SRAMsa static model, pp.607-612, 1994.
DOI : 10.1109/23.299807

]. E. Normand and W. R. Doherty, Incorporation of ENDF-V neutron cross section data for calculating neutron-induced single event upsets, IEEE Transactions on Nuclear Science, vol.36, issue.6, pp.2349-2355, 1989.
DOI : 10.1109/23.45447

. Yamagushi, A Novel 0.20µm Full CMOS SRAM Cell Using Stacked Cross Couple with Enhanced Soft Error Immunity, présenté à International Electron Devices Meeting, IEDM '98 Technical Digest, 1998.

]. J. Pelloie, SOI for low-power low-voltage - bulk versus SOI, Microelectronic Engineering, vol.39, issue.1-4, pp.155-166, 1997.
DOI : 10.1016/S0167-9317(97)00173-1

]. E. Petersen, J. C. Pickel, J. H. Adams, J. , and E. C. Smith, Rate prediction for single event effects-a critique, IEEE Transactions on Nuclear Science, vol.39, issue.6, p.1577, 1992.
DOI : 10.1109/23.211340

]. P. Roche, J. M. Palau, G. Bruguier, C. Tavernier, R. Ecoffet et al., Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations, IEEE Transactions on Nuclear Science, vol.46, issue.6, pp.1354-1362, 1999.
DOI : 10.1109/23.819093

P. Roche, F. Jacquet, C. Caillat, and J. P. Schoellkopf, An alpha immune and ultra low neutron SER high density SRAM, 2004 IEEE International Reliability Physics Symposium. Proceedings, 2004.
DOI : 10.1109/RELPHY.2004.1315444

]. L. Rockett, An SEU-hardened CMOS data latch design, IEEE Transactions on Nuclear Science, vol.35, issue.6, pp.1682-1687, 1988.
DOI : 10.1109/23.25522

]. L. Rockett, Simulated SEU hardened scaled CMOS SRAM cell design using gated resistors, IEEE Transactions on Nuclear Science, vol.39, issue.5, pp.1532-1541, 1992.
DOI : 10.1109/23.173239

J. R. Schwank, V. Ferlet-cavrois, M. R. Shaneyfelt, P. Paillet, and P. E. Dodd, Radiation effects in SOI technologies, IEEE Transactions on Nuclear Science, vol.50, issue.3, pp.522-538, 2003.
DOI : 10.1109/TNS.2003.812930

S. Hanbyung, J. Byoungkeun, K. Youngchul, and . Kinam, Soft error immune 0.46 µm SRAM cell with MIM node capacitor by 65 nm CMOS technology for ultra high speed SRAM, présenté à IEEE International Electron Devices Meeting, IEDM '03 Technical Digest, 2003.

B. Evaluation-du, 103 IV.2.3.1 Modèle au premier ordre : charge déposée dans zone sensible, p.105

]. W. Références and . Abare, Signal Data Processing Subsystem, IEEE Nuclear and Space Radiation Effects Conference Short Course, 1989.

J. Baggio, V. Ferlet-cavrois, H. Duarte, and O. Flament, Analysis of proton/neutron SEU sensitivity of commercial SRAMs-application to the terrestrial environment test method, IEEE Transactions on Nuclear Science, vol.51, issue.6, pp.3420-3426, 2004.
DOI : 10.1109/TNS.2004.839135

[. Phd, Castellani-CouliéRecherche des paramètres déterminants pour la prévision des aléas logiques induits par les protons et les neutrons sur les technologies CMOS avancées, Thèse de doctorat, 2002.

]. C. Dai, N. Hakim, S. Hareland, J. Maiz, and S. Lee, Alpha-SER Modeling and Simulation for Sub-0.25µm CMOS Technology, Symposium on VLSI Technology Digest of Technical Papers, 1999.

C. Dyer, S. Clucas, F. Lei, P. Truscott, R. Nartello et al., Comparative Simulations of Single Event Upsets Induced by Protons and Neutrons in Commercial SRAMs, IEEE Radiation and Its Effects on Components and Systems Conference, 2003.

G. Marcandella, G. Giraud, T. Gasiot, O. Colladant, C. Musseau et al., Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation, IEEE Transactions on Nuclear Science, vol.49, issue.3, pp.1456-1461, 2002.

V. Ferlet-cavrois, P. Paillet, D. Mcmorrow, J. S. Melinger, A. B. Campbell et al., Analysis of the Transient Response of High Performance 50-nm Partially Depleted SOI Transistors Using a Laser Probing Technique, Radiation and Its Effects on Components and Systems, 2005.

P. Gasiot, Etude de la sensibilité de technologies CMOS/Bulk et CMOS/SOI Partiellement Désertée très largement sub-microniques dans l'environnement radiatif terrestre, PhD, 2004.

H. Hirose, Y. Saito, S. Kuroda, Y. Ishii, D. Fukuoka et al., SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design, IEEE Transactions on Nuclear Science, vol.49, issue.6, pp.2965-2968, 2002.
DOI : 10.1109/TNS.2002.805978

L. W. Ball, K. A. Massengill, J. W. Label, J. Howard, and N. F. Haddad, Role of heavy-ion nuclear reactions in determining on-orbit single event error rates, IEEE Transactions on Nuclear Science, vol.52, issue.6, p.2182, 2005.

G. Hubert, N. Buard, C. Weulersse, T. Carrière, M. C. Palau et al., A review of DASIE code family: contribution to SEU/MBU understanding, 11th IEEE International On-Line Testing Symposium, 2005.
DOI : 10.1109/IOLTS.2005.12

S. Inguimbert, R. Duzellier, and . Ecoffet, Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs, IEEE Transactions on Nuclear Science, vol.49, issue.3, pp.1480-1485, 2002.
DOI : 10.1109/TNS.2002.1039687

H. Hane, T. Nakamura, K. Yamada, and . Kumagai, Investigation of soft error rate including multi-bit upsets in advanced SRAM using neutron irradiation test and 3D mixed-mode device simulation, Electron Devices Meeting, 2004.

]. J. Letaw and E. Normand, Guidelines for predicting single-event upsets in neutron environments (RAM devices), IEEE Transactions on Nuclear Science, vol.38, issue.6, pp.1500-1506, 1991.
DOI : 10.1109/23.124138

T. Merelle, F. Saigne, B. Sagnes, G. Gasiot, P. Roche et al., Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs, IEEE Transactions on Nuclear Science, vol.52, issue.5, pp.1538-1544, 2005.
DOI : 10.1109/TNS.2005.855823
URL : https://hal.archives-ouvertes.fr/hal-00328657

F. Palau, J. M. Wrobel, and . Palau, Monte-Carlo simulations to quantify neutron-induced Multiple Bit Upsets in advanced SRAMs, Proceedings RADECS, pp.351-358, 2004.
URL : https://hal.archives-ouvertes.fr/hal-00328657

[. Phd, Conception et validation d'un simulateur Monte-Carlo d'aléas logiques induits par l'environnement radiatif terrestre sur les technologies très largement submicroniques, Thèse de doctorat, 2005.

T. Mérelle, H. Chabane, J. Palau, K. Castellani-coulie, F. Wrobel et al., Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER, IEEE Transactions on Nuclear Science, vol.52, issue.4, pp.1148-1155, 2005.
DOI : 10.1109/TNS.2005.852319

]. P. Murley and G. R. Srinivasan, Soft-error Monte Carlo modeling program, SEMM, IBM Journal of Research and Development, vol.40, issue.1, pp.109-118, 1996.
DOI : 10.1147/rd.401.0109

]. E. Normand, Single-event effects in avionics, IEEE Transactions on Nuclear Science, vol.43, issue.2, pp.461-474, 1996.
DOI : 10.1109/23.490893

]. J. Palau, G. Hubert, K. Coulie, B. Sagnes, M. C. Calvet et al., Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions, IEEE Transactions on Nuclear Science, vol.48, issue.2, pp.225-231, 2001.
DOI : 10.1109/23.915368

J. M. Palau, F. Wrobel, K. Castellani-coulie, M. C. Calvet, P. E. Dodd et al., Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs, IEEE Transactions on Nuclear Science, vol.49, issue.6, pp.3075-3081, 2002.
DOI : 10.1109/TNS.2002.805420
URL : https://hal.archives-ouvertes.fr/hal-00325124

]. J. Palau, M. C. Calvet, P. E. Dodd, F. W. Sexton, and P. Roche, Contribution of device simulation to SER understanding, Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International, 2003.

A. Mccurdy, J. Witulski, T. Pickel, and . Jordan, Application of the RADSAFE Concept, Geant4 Space Users Workshop, 2005.

P. Roche, G. Gasiot, K. Forbes, V. O. Sullivan, and V. Ferlet, Comparisons of soft error rate for srams in commercial soi and bulk below the 130-nm technology node, IEEE Transactions on Nuclear Science, vol.50, issue.6, pp.2046-2054, 2003.
DOI : 10.1109/TNS.2003.821588

H. H. Tang and E. H. Cannon, SEMM-2: a modeling system for single event upset analysis, IEEE Transactions on Nuclear Science, vol.51, issue.6, p.3342, 2004.
DOI : 10.1109/TNS.2004.839507

S. Tosaka, T. Satoh, and . Itakura, The International Technology Roadmap for Semiconductor http://public.itrs.net [Tosaka -1997Neutron-induced soft error simulator and its accurate predictions, Simulation of Semiconductor Processes and Devices SISPAD '97 International Conference on, 1997.

H. Tosaka, T. Kanata, S. Itakura, and . Satoh, Simulation technologies for cosmic ray neutron-induced soft errors: Models and simulation systems, IEEE Transactions on Nuclear Science, vol.46, issue.3, pp.774-780, 1999.
DOI : 10.1109/23.774176

M. L. Olson, L. W. Alles, R. D. Massengill, N. F. Schrimpf, S. E. Haddad et al., The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM, IEEE Transactions on Nuclear Science, vol.52, issue.6, p.2125, 2005.

. Heins, DASIE Analytical Version: A Predictive Tool for Neutrons, Protons and Heavy Ions Induced SEU Cross Section", Radiation and Its Effects on Components and Systems, Cap d, 2005.

F. Wrobel, J. M. Palau, M. C. Calvet, O. Bersillon, and H. Duarte, Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections, IEEE Transactions on Nuclear Science, vol.48, issue.6, pp.1946-1952, 2001.
DOI : 10.1109/23.983155

F. Wrobel, J. M. Palau, M. C. Calvet, and P. Iacconi, Contribution of SiO/sub 2/ in neutron-induced seu in SRAMs, IEEE Transactions on Nuclear Science, vol.50, issue.6, pp.2055-2059, 2003.
DOI : 10.1109/TNS.2003.821596

]. J. Ziegler, Terrestrial cosmic rays, IBM Journal of Research and Development, vol.40, issue.1, pp.19-39, 1996.
DOI : 10.1147/rd.401.0019

]. J. Ziegler, J. P. Biersack, and A. Littmark, The stoping power and range of ions in solids, 1996.

]. J. Ziegler and J. P. Biersack, The Stopping and Range of Ions in Matter 2003. www.srim.com, SER-History, Trends and Challenges A guide for Designing with Memory ICs, 2003.

M. Pour-des-composants-intégrés and .. , 152 V.1.3. Analyse des résultats de simulation, p.158

.. Spectre-neutronique, 166 V.2.3. Résultats expérimentaux, p.169

.. N-si-+-n-o-»-apport-de-la-prise-en-compte-de-deux-matériaux, 178 V.3.1. Introduction, p.180

J. Références, V. Baggio, H. Ferlet-cavrois, O. Duarte, and . Flament, Analysis of Proton/Neutron SEU Sensitivity of Commercial SRAMs -Application to the Terrestrial Environment Test Method, IEEE Transactions on Nuclear Science, vol.51, issue.6, pp.3420-3426, 2004.

J. Baggio, D. Lambert, V. Ferlet-cavrois, C. D. 'hose, K. Hirose et al., Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment, 2004 IEEE International Reliability Physics Symposium. Proceedings, 2004.
DOI : 10.1109/RELPHY.2004.1315447

. Blackmore, Neutron-Induced Single Event Upsets in Advanced Commercial Fully Depleted SOI SRAMs, IEEE Transactions on Nuclear Science, vol.52, issue.6, pp.2319-2325, 2005.

E. W. Blackmore, Operation of the TRIUMF (20-500 MeV) proton irradiation facility, 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527), pp.1-5, 2000.
DOI : 10.1109/REDW.2000.896260

]. A. Campbell and W. J. Stapor, The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMs, IEEE Transactions on Nuclear Science, vol.31, issue.6, pp.1175-1177, 1984.
DOI : 10.1109/TNS.1984.4333477

]. S. Campbell, The Science and Engineering of Microelectronic Fabrication, 1996.

. Sexton, Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation, Nuclear Science IEEE Transactions on, vol.50, issue.6, pp.2239-2244, 2003.
URL : https://hal.archives-ouvertes.fr/hal-00327361

]. P. Dodd and F. W. Sexton, Critical charge concepts for CMOS SRAMs, IEEE Transactions on Nuclear Science, vol.42, issue.6, p.1764, 1995.
DOI : 10.1109/23.488777

F. W. Schwank, P. S. Sexton, and . Winokur, SEU-sensitive volumes in bulk and SOI SRAMs from firstprinciples calculations and experiments, IEEE Transactions on Nuclear Science, vol.48, issue.6, pp.1893-1903, 2001.

]. P. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies, Digest. International Electron Devices Meeting,, 2002.
DOI : 10.1109/IEDM.2002.1175846

S. N. Dyer, C. Clucas, A. D. Sanderson, R. T. Frydland, and . Green, An experimental study of single-event effects induced in commercial SRAMs by neutrons and protons from thermal energies to 500 MeV, IEEE Transactions on Nuclear Science, vol.51, issue.5
DOI : 10.1109/TNS.2004.835083

. Shaneyfelt, Charge Enhancement Effects in NMOS Bulk Transistors Induced by Heavy Ion Irradiation, IEEE Transactions on Nuclear Science, vol.51, issue.6, pp.3255-3262, 2004.

P. Gasiot, Etude de la sensibilité de technologies CMOS/Bulk et CMOS/SOI Partiellement Désertée très largement sub-microniques dans l'environnement radiatif terrestre, PhD, 2004.

T. Granlund, B. Granbom, and N. Olsson, Soft error rate increase for new generations of srams, IEEE Transactions on Nuclear Science, vol.50, issue.6, pp.2065-2068, 2003.
DOI : 10.1109/TNS.2003.821593

T. Granlund, B. Granbom, and N. Olsson, A comparative study between two neutron facilities regarding SEU, IEEE Transactions on Nuclear Science, vol.51, issue.5, p.2922, 2004.
DOI : 10.1109/TNS.2004.835070

N. Olssom, A Comparative Study between Proton and Neutron Induced SEUs in SRAMs, IEEE Radiation and Its Effects on Components and Systems, 2005.

P. Hazucha, T. Karnik, J. Maiz, S. Walstra, B. Bloechel et al., Neutron Soft Error Rate Measurements in a 90-nm CMOS Process and Scaling Trends in SRAM from 0.25-µm to 90-nm Generation, Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, 2003.

B. Kruseman, Impact of process variations on the alpha-particle-induced SER of embedded SRAMs, International Conference on Memory Technology and Design, 2005.

]. K. Johansson, P. Dyreklev, B. Granbom, N. Olsson, J. Blomgren et al., Energy-resolved neutron SEU measurements from 22 to 160 MeV, IEEE Transactions on Nuclear Science, vol.45, issue.6, pp.2519-2526, 1998.
DOI : 10.1109/23.736493

H. Kobayashi, H. Usuki, K. Shiraishi, H. Tsuchiya, N. Kawamoto et al., Comparison between neutron-induced system-SER and accelerated-SER in SRAMS, 2004 IEEE International Reliability Physics Symposium. Proceedings, 2004.
DOI : 10.1109/RELPHY.2004.1315339

R. Koga, J. George, G. Swift, C. Yui, L. Edmonds et al., Comparison of Xilinx Virtex-II FPGA SEE sensitivities to protons and heavy ions, IEEE Transactions on Nuclear Science, vol.51, issue.5, p.2825, 2004.
DOI : 10.1109/TNS.2004.835057

. Carriere, Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments, IEEE Transactions on Nuclear Science, vol.51, issue.6, p.3435, 2004.
URL : https://hal.archives-ouvertes.fr/hal-00330001

J. Duarte, B. Boch, N. Sagnes, T. Buard, and . Carrière, Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions, IEEE Transactions on Nuclear Science, vol.52, issue.6, pp.2332-2339, 2005.
URL : https://hal.archives-ouvertes.fr/hal-00328123

J. Maiz, S. Hareland, K. Zhang, and P. Armstrong, Characterization of multi-bit soft error events in advanced SRAMs, IEEE International Electron Devices Meeting 2003, 2003.
DOI : 10.1109/IEDM.2003.1269335

]. E. Normand, Extensions of the burst generation rate method for wider application to proton/neutron-induced single event effects, IEEE Transactions on Nuclear Science, vol.45, issue.6, pp.2904-2914, 1998.
DOI : 10.1109/23.736546

]. A. Prokofiev, M. Chadwick, S. Mashnik, N. Olssom, and L. Waters, Development and Validation of the 7Li(p,n) Nuclear Data Library and Its Application in Monitoring of Intermediate Energy Neutrons, International Conference on Nuclear Data for Science and Technology, 2001.

. Tippawan, A new neutron facility for single-event effect testing, IEEE Radiation Effects Data Workshop Record, 2004.

P. [-roche-phd and . Roche, Etude de l'alea logique (SEU) induit par une particule ionisante dans des mémoires SRAM développées en technologies CMOS submicroniques, 1999.

J. R. Schwank, P. E. Dodd, A. R. Shaneyfelt, J. A. Felix, G. L. Hash et al., Issues for single-event proton testing of SRAMs, IEEE Transactions on Nuclear Science, vol.51, issue.6, pp.3692-3700, 2004.
DOI : 10.1109/TNS.2004.839301

D. Paillet, F. Lambert, G. L. Sexton, E. W. Hash, and . Blackmore, Effects of Particle Energy on Proton and Neutron-Induced Single-Event Latchup, IEEE Transactions on Nuclear Science, vol.52, issue.2, pp.2622-2629, 2005.

H. Tosaka, M. Ehara, T. Igeta, H. Uemura, N. Oka et al., The International Technology Roadmap for SemiconductorComprehensive study of soft errors in advanced CMOS circuits with 90, public.itrs.net, 2004.

H. Tosaka, M. Ehara, T. Igeta, H. Uemura, N. Oka et al., Comprehensive Study of Soft Errors in Advanced CMOS Circuits, IEEE IEDM, 2004.

S. Yamamoto, K. Kokuryou, Y. Okada, J. Komori, E. Murakami et al., Neutron-induced soft error in logic devices using quasi-monoenergetic neutron beam, 2004 IEEE International Reliability Physics Symposium. Proceedings, 2004.
DOI : 10.1109/RELPHY.2004.1315342

. Carrière, Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments, IEEE Transactions on Nuclear Science, vol.51, issue.6, p.3435, 2004.

J. Saigné, B. Boch, N. Sagnes, T. Buard, and . Carrière, Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications, IEEE Transactions on Nuclear Science, vol.53, 2006.

. Blackmore, Neutron-Induced Single Event Upsets in Advanced Commercial Fully Depleted SOI SRAMs, Nuclear Science IEEE Transactions on, vol.52, issue.6, pp.2319-2325, 2005.

D. Paillet, F. Lambert, G. L. Sexton, E. W. Hash, and . Blackmore, Effects of Particle Energy on Proton and Neutron-Induced Single-Event Latchup, Nuclear Science IEEE Transactions on, vol.52, issue.6, pp.2622-2629, 2005.

. Carriere, Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments", présenté à IEEE Nuclear And Space Radiation Effects Conference, 2004.

J. Duarte, B. Boch, N. Sagnes, T. Buard, and . Carrière, Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions", présenté à IEEE Nuclear And Space Radiation Effects Conference, 2005.

J. Saigné, B. Boch, N. Sagnes, E. T. Buard, and . Carrière, Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications," présenté à la conférence IEEE Radiation and Its Effects on Components and Systems, Cap d, pp.19-23, 2005.

. Blackmore, Neutron-Induced Single Event Upsets in Advanced Commercial Fully Depleted SOI SRAMs", présenté à IEEE Nuclear And Space Radiation Effects Conference, 2005.

D. Paillet, F. Lambert, G. L. Sexton, E. W. Hash, and . Blackmore, Effects of Particle Energy on Proton and Neutron-Induced Single-Event Latchup", présenté à IEEE Nuclear And Space Radiation Effects Conference, 2005.

B. Saigne, N. Sagnes, T. Buard, and . Carriere, Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment, IEEE Internationnal Reliability Physics Symposium, 2004.

@. V. Ferlet-cavrois, J. Baggio, A. Torres, D. Lambert, P. Paillet et al., SOI Technologies In Space And Terrestrial Environnements, présenté au 6th Int. Workshop on Radiation Effects on Semiconductor Devices For Space Application (invited), 2004.

F. Baggio, F. Wrobel, R. Saigné, and . Gaillard, A review of DASIE code family: contribution to SEU/MBU understanding, 11th IEEE International On-Line Testing Symposium, 2005.