Local structure of dilute nitrides and effects of post-growth treatments

STRUCTURE LOCALE DES NITRURES D'ELEMENTS III-V GaAsN ET InGaAsN ET EFFETS DES TRAITEMENTS POST-CROISSANCE

Gianluca Ciatto (1)

1 ESRF - European Synchrotron Radiation Facility

THIS THESIS ADDRESSES THE ISSUE OF A STRUCTURAL CHARACTERIZATION OF THE TECHNOLOGICALLY IMPORTANT III-V DILUTE NITRIDES GAASN AND INGAASN, PROVIDING A USEFUL FRAME TO BETTER UNDERSTAND THE ANOMALOUS OPTICAL PROPERTIES THAT HAVE BEEN OBSERVED FOR EIGHT YEARS AND ARE NOWADAYS EXPLOITED IN OPTOELECTRONIC DEVICES DESIGN. THE MAIN TECHNIQUES USED WERE X-RAY ABSORPTION SPECTROSCOPY (XAS) AND X-RAY DIFFRACTION (XRD). DIFFRACTION ANOMALOUS FINE STRUCTURE (DAFS) TOOK ALSO A LIMITED BUT MEANINGFUL ROLE IN THIS WORK. THE SUBJECTS ADDRESSED IN THIS THESIS WERE THE SHORT RANGE ORDERING IN INGAASN AND THE EFFECTS OF POST-GROWTH ANNEALING ON THE LOCAL STRUCTURE, THE COMPOSITION DEPENDENCE OF THE BOND LENGTHS AT THE N-DILUTE LIMIT IN GAASN, AND THE EFFECTS OF HYDROGENATION ON THE STRUCTURE OF DILUTE NITRIDES. WE GAVE EVIDENCE FOR THE PRESENCE OF A PREFERENTIAL IN-N BONDING OVER IN-AS IN INGAASN DRIVEN BY THERMAL ANNEALING, AND OF A REMARKABLE RELAXATION OF THE UNIT CELL UPON HYDROGENATION

CE TRAVAIL DE THESE A LE BUT DE FOURNIR UNE CARACTERISATION STRUCTURALE DES SEMICONDUCTEURS III-V GaAsN ET InGaAsN, MATERIAUX DE GRANDE IMPORTANCE TECHNOLOGIQUE POUR LA REALISATION D'EMETTEURS LASERS A 1.3 MICRONS SUR SUBSTRAT GaAs, ET D'OFFRIR UNE ASSISE POUR MIEUX COMPRENDRE LES PROPRIETES OPTIQUES ET ELECTRONIQUES ANOMALES QUI ONT ETE OBSERVEES IL Y A HUIT ANS ET QUI SONT DESORMAIS EXPLOITEES DANS LA REALISATION DES COMPOSANTES OPTOELECTRONIQUES. LES TECHNIQUES PRINCIPALES QUE NOUS AVONS UTILISEES DANS CE BUT SONT L'ABSORPTION DE RAYONS X (XAS) AVEC RAYONNEMENT DE SYNCHROTRON ET LA DIFFRACTION DE RAYONS X (XRD); LA SPECTROSCOPIE DE DIFFRACTION ANOMALE (DAFS) A EU UN ROLE LIMITE, MAIS NEANMOINS SIGNIFICATIF.
TROIS SUJETS ONT ETE ABORDES: L'ORDRE LOCAL EN ALLIAGES InGaAsN ET LES EFFETS DU RECUIT POST-CROISSANCE SUR LA STRUCTURE LOCALE, L'ETUDE DES DISTANCES INTERATOMIQUES EN GaAsN ET, ENFIN, LES EFFETS DE L'HYDROGENATION SUR LA STRUCTURE LOCALE ET GLOBALE DE GaAsN ET InGaAsN.

Mots clés: SEMICONDUCTORS; DILUTE NITRIDES; SHORT RANGE ORDERING; SYNCHROTRON RADIATION; NANOSTRUCTURES; SOLID STATE PHYSICS

Mots clés: SEMI-CONDUCTEURS; NITRURES; EXAFS; ORDRE LOCAL; HYDROGENATION; RAYONNEMENT SYNCHROTRON; NANOSTRUCTURES<br />8) PHYSIQUE DE L'ETAT SOLIDE

Domaines: Matière Condensée [cond-mat]

Gianluca Ciatto. Local structure of dilute nitrides and effects of post-growth treatments. Condensed Matter [cond-mat]. Université Joseph-Fourier - Grenoble I, 2004. English. ⟨NNT : ⟩. ⟨tel-00124342⟩