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Hétérostructures Antimoniures/Arséniures pour les applications optoélectroniques dans le moyen infrarouge

Abstract : The progress made during the thirty last years in the field of crystalline growth and technology of III-V semiconductors allowed the optoelectronic components (laser, detector) functioning in the band 0,4-1,8 µm to be nowadays essential elements for telecommunications, data storage or medical field. However, many applications, like infrared detection, molecular spectroscopy of atmospheric pollutants, require the development of lasers and detectors functioning with higher wavelength, in particular in the atmospheric transparency windows (3-5 µm and 8-12 µm). The realization of these various devices is possible by using the mixed antimonide/arsenide heterostructures. However, several difficulties are associated with the epitaxial growth of these heterostructures (lattice mismatch between materials, characterization of the heterostructures, competitive incorporation of the group V elements...). The aim of this thesis consisted firstly in determining the conditions of growth allowing the realization of quantum cascade lasers based on AlAsSb/GaInAs materials grown on InP substrate and photovoltaic detectors InAsSb grown on GaSb substrate. With this intention, the whole parameters influencing the competing incorporation of the two group V elements (temperature, growth rate, nature of element III...) was studied. A procedure of determination of the individual thicknesses and compositions of the GaInAs/AlAsSb heterostructures, by X-ray diffraction, based on the use of a double superlattice was also proposed. This work made it possible to better understand the phenomena occuring at the interfaces with the growth conditions used and thus obtain a rigorous and reproducible calibration. Satisfactory preliminary results were finally obtained on the quantum cascade electroluminescent diodes AlAsSb/GaInAs on InP and on the photovoltaic detectors InAsSb on GaSb. The second part of this thesis consisted in the optimization of the growth conditions of (Al,Ga)Sb/InAs heterostructures grown on InAs and GaSb substrate. In this material system, the existence of indium segregation at the AlSb/InAs interfaces was highlighted by various techniques of characterization (HRTEM, RHEED, HRXRD). The taking into account of this segregation made it possible to improve the performances of QCLs InAs/AlSb and reach operation at ambient temperature. Promising results were also obtained for GaSb/AlSb/InAs. interband cascade detecting structures.
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Contributor : Charles Renard <>
Submitted on : Wednesday, April 11, 2007 - 11:55:05 AM
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  • HAL Id : tel-00124336, version 3


Charles Renard. Hétérostructures Antimoniures/Arséniures pour les applications optoélectroniques dans le moyen infrarouge. Matière Condensée [cond-mat]. Université Paris-Diderot - Paris VII, 2005. Français. ⟨tel-00124336v3⟩



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