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Echantillonnage électro-optique à 1,55 µm pour la mesure de circuits rapides sur InP

Abstract : The bit rate increase of modern telecommunications requires the realization of integrated
circuits with higher cut-off frequencies. The test and the characterization of these
components reach the limits of the standard measuring instruments (network analyzer
and sampling oscilloscope). Few years ago, the electro-optic sampling techniques based
on a femtosecond pulsed laser have proven to be a good solution to answer this problem.
The trigger of the electro-optic sampling bench is in our case realized by a photoconductor
based on a InGaAs layer epitaxied on InP substrate. This semiconductive layer
allows to use of 1,55 µm femtosecond laser sources but also to make the photoconductor
compatible with the InP-related materials, main substrate for the telecommunication
components. The ionic irradiation of the InGaAs layer introduces structural defects that
act as traps for the free carriers making the component ultra-fast.
The effect of the ionic irradiation on the material properties of InGaAs is studied.
A Frenkel pair distribution model allows to explain the evolution of mobility and the
lifetime of electrons for proton- irradiated layers. The ultra-fast photoconductors based
on irradiated InGaAs layers generate electrical pulses with a full width at half maximum
close to 2.2 ps with an amplitude of 0.65 V for 3 V bias polarization. The electro-optic
sampling bench trigger is thus performed by the irradiated photoconductor and the measurement
is realized thanks to a miniature electro-optic probe of lithium tantalite (LiTaO3).
The performances of the electro-optic bench permit to caracterize various components :
photodiodes with a bandwidth higher than 65 GHz, coplanar waveguides and a 60 GHz
bandwidth distributed amplifier, realized by Alcatel-Opto+. This measurement permit to
evaluate the temporal response of the amplifier in large and small signals.
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Contributor : Laurent Joulaud <>
Submitted on : Thursday, January 4, 2007 - 6:33:02 PM
Last modification on : Friday, October 23, 2020 - 4:51:26 PM
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  • HAL Id : tel-00122780, version 1



Laurent Joulaud. Echantillonnage électro-optique à 1,55 µm pour la mesure de circuits rapides sur InP. Physique Atomique [physics.atom-ph]. Université Paris Sud - Paris XI, 2004. Français. ⟨tel-00122780⟩



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