The concept of generation and recombinaison lifetime in semiconductors, IEEE Trans. Electron Devices, pp.1336-1338 ,
New insights on the electronic properties of the trivalent silicon defects at oxidized ???100??? silicon surfaces, Applied Physics Letters, vol.57, issue.12, pp.1206-1208, 1990. ,
DOI : 10.1063/1.103486
Nature of the defects generated by electric field stress at the Si-SiO 2 interface, Appl. Phys. Lett, vol.581, issue.4, p.490, 1991. ,
Statistics of the recombinaison of holes and electrons, Phys. Rev, vol.87, issue.5, pp.62-69, 1952. ,
A reliable approch to charge-pumping measurements in MOS transistors, II.12, pp.31-42, 1984. ,
Three-level charge pumping on submicronic MOS transistors, Solid State Communications, vol.84, issue.6, pp.607-611, 1992. ,
DOI : 10.1016/0038-1098(92)90200-S
Determination of interface trap capture cross sections using three-level charge pumping, IEEE Electron Device Letters, vol.11, issue.8, 1990. ,
DOI : 10.1109/55.57927
Accurate measurement of capture cross section of semiconductor insulator interface sates by a trap-filling experiment: the charge-potential feedback effect, Journal of applied physic, issue.683, pp.1104-1113, 1990. ,
Ion transport phenomena in insulated films, Journal of Applied Physic, issue.36, pp.1664-1673, 1976. ,
Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS Structures, Journal of The Electrochemical Society, vol.118, issue.4, pp.601-609, 1971. ,
DOI : 10.1149/1.2408120
Characteristics of the surface charge (Q ss ) of thermally oxydized silicon, J Electrochen. Soc, issue.114, pp.266-274 ,
Influence of nitridation in ultra-thin oxide on the gate current degradation of N and PMOS devices, Microelectronics Reliability, issue.43, pp.1433-1438, 2003. ,
Low level currents in insulated gate field effect transistors, Solid-State Electronics, vol.15, issue.3, pp.293-302, 1972. ,
DOI : 10.1016/0038-1101(72)90084-6
Problems related to p-n junctions in silicon, Solid-State Electronics, vol.2, issue.1, pp.35-67, 1961. ,
DOI : 10.1016/0038-1101(61)90054-5
Operation and modeling of The MOS Transistor, 1999. ,
Physical mechanisms responsible for short channel effects in MOS devices, 1981 International Electron Devices Meeting, 1981. ,
DOI : 10.1109/IEDM.1981.190155
Explanation of reverse short channel effect by defect gradients, Proceedings of IEEE International Electron Devices Meeting, pp.311-314, 1993. ,
DOI : 10.1109/IEDM.1993.347345
Semiconductor Device Modeling with SPICE, 1988. ,
Electron and hole mobilities in silicon as a function of concentration and temperature, IEEE Transactions on Electron Devices, vol.29, issue.2, pp.609-616, 1982. ,
DOI : 10.1109/T-ED.1982.20698
Device caracteristics of short-channel and narrow-width MOSFET's, IEEE Trans. Electron Devices, issue.25, pp.779-768 ,
A MOS model for computer-aided design, pp.71-83, 1976. ,
MOS device modelling. Englewoods Cliffs, N.J.: Design of VLSI circuits for telecommunications, Tsividis and P. Antognetti, Printice-Hall (editeurs), 1985. ,
A simple parameter extraction method for ultra-thin oxide MOSFETs, Solid-State Electronics, vol.38, issue.6, pp.1175-1177, 1995. ,
DOI : 10.1016/0038-1101(94)00248-E
MOSFET modeling with SPICE, Principles and practices. Upper Saddle River: Printice Hall, 1997. ,
DOI : 10.1109/northc.1998.731541
Dependence of channel electric field on device scaling, IEEE Electron Device Letters, vol.6, issue.10, pp.551-553, 1985. ,
DOI : 10.1109/EDL.1985.26226
Approximation of the length of velocity saturation region in MOSFET's, IEEE Transactions on Electron Devices, vol.44, issue.11, pp.2033-2036, 1997. ,
DOI : 10.1109/16.641378
An analytical effective channel-length modulation model for overshoot in submicron MOSFETs based on energy-balance formulation Microelectronic reliability, pp.1857-1864, 2002. ,
A simple two-dimensional model for IGFET operation in the saturation region, IEEE Trans. Electron Devices I, vol.244, issue.115, p.224, 1997. ,
Hot electron induced MOSFET degradation -model, monitor and improvment, IEEE Trans. Electron Devices, vol.32, issue.2 ,
Hot electrons in deepsubmicrometer MOSFETs, IEDM / IEEE, 1988. ,
Theory of the MOS transistor in weak inversion-new method to determine the number of surface states, IEEE Transactions on Electron Devices, vol.22, issue.5, p.282, 1975. ,
DOI : 10.1109/T-ED.1975.18119
A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's, IEEE Transactions on Electron Devices, vol.40, issue.4, p.773, 1993. ,
DOI : 10.1109/16.202790
Charge pumping in MOS devices, IEEE Transactions on Electron Devices, vol.16, issue.3, pp.297-302, 1969. ,
DOI : 10.1109/T-ED.1969.16744
Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps, Solid-State Electronics, vol.16, issue.1, pp.43-52, 1973. ,
DOI : 10.1016/0038-1101(73)90124-X
A reliable approach to charge-pumping measurements in MOS transistors, II.12, p.42, 1984. ,
DOI : 10.1109/T-ED.1984.21472
Determiniation of trap capture cross section using three level charge pumping, IEEE Electron Device Lett, vol.11, issue.8, 1990. ,
Use of the charge pumping technique with a sinusoidal gate waveform, Solid-State Electronics, vol.39, issue.9, pp.1394-1395, 1996. ,
DOI : 10.1016/0038-1101(96)00039-1
On the tunnling component of charge pumping current in ultrathin gate oxide MOSFET's, II.2, II.2.4, II.2.4, II.2, 1999. ,
Comparison of low leakage and high speed deep submicron pmosfet's submitted to hole injection, International Reliabilty Workshop '02 II.2.4, II, p.22, 2002. ,
Statistics of the recombinaison of holes and electrons, Phys. Rev, vol.87, issue.5, pp.62-69, 1952. ,
Etude par pompage de charge et par mesures de bruit basse fréquence de transistors mos a oxynitrure de grille ultra-mince, Thèse de doctorat, pp.13-1999 ,
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation, IEEE Transactions on Electron Devices, vol.36, issue.7, p.1318, 1989. ,
DOI : 10.1109/16.30938
The use of charge pumping currents to measure surface state densities in MOS transistors, Solid-State Electronics, vol.19, issue.3, pp.241-247, 1976. ,
DOI : 10.1016/0038-1101(76)90169-6
Analysis of interface properties in MOS transistors by means of charge pumping measurements, pp.244-253, 1974. ,
Hot Carrier Design Considerations for MOS Devices and Circuits, p.18, 1992. ,
DOI : 10.1007/978-1-4684-8547-9
Basics and applications of charge pumping in submicron MOS- FETs Microelectronic Reliability, pp.1379-1389, 1998. ,
Lateral profiling of oxide charge and interface traps near MOSFET junctions, II.3, p.187, 1993. ,
DOI : 10.1109/16.249443
Comparison of the carrier injection mechanisms in low leakage and high speed HC9L7 PMOSFET's, p.20, 2002. ,
A novel direct determination of the interface traps in sub 100nm CMOS devices with direct tunneling regime 12-16Å gate oxide, Symposium on VLSI Technology, p.74, 2002. ,
Low leakage reliability characterisation methodology for advanced CMOS with gate oxide in 1nm range (invited), IEEE IEDM ' 04, p.477, 2004. ,
Numerical simulation of 3???level charge pumping, Journal of Applied Physics, vol.71, issue.9, pp.4415-4421, 1992. ,
DOI : 10.1063/1.350781
Lateral distribution of hot-carrier-induced interface traps in MOSFET's, IEEE Trans. Electron Devices II, vol.353, issue.122, p.2221, 1988. ,
A new charge pumping method for determining the spatial distribution of hot carrier induced fixed charge in p-MOSFET's, IEEE Trans. Electron Devices II, vol.403, issue.102, pp.1768-1779, 1993. ,
A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions, IEEE Electron Device Letters, vol.12, issue.7, pp.393-395, 1991. ,
DOI : 10.1109/55.103618
Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique, IEEE Transactions on Electron Devices, vol.33, issue.10, p.1529, 1986. ,
DOI : 10.1109/T-ED.1986.22703
Sensitive technique for measuring small MOS gate currents, IEEE Electron Device Letters, vol.1, issue.11, p.231, 1980. ,
DOI : 10.1109/EDL.1980.25299
Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging, IEEE Electron Device Letters, vol.11, issue.9, p.406, 1990. ,
DOI : 10.1109/55.62971
Lucky electron model of hot electron injections in MOS- FET's, IEEE Trans. Electron Devices ,
Lucky electron model of hot electron injections in MOS- FET's, IEEE Trans. Electron Devices ,
Hot-electroninduced MOSFET degradation -model, monitor, and improvement, IEEE Trans. Electron Devices, issue.32, pp.375-385, 1985. ,
Modeling weak avalanche multiplication in IGFETs and SOS transistor for CAD, IEDM ech Dig, p.31, 1975. ,
Emission probability of hot electrons from silicon into silicon dioxide, Journal of Applied Physics, vol.48, issue.1, pp.286-293, 1977. ,
DOI : 10.1063/1.323374
Introduction to Electronic Devices, 1996. ,
The defect stucture Si/SiO 2 interface model based on trivalent silicon and its hydrogen compounds, The physic of SiO 2 and its interface, pp.329-333, 1978. ,
Relationship between MOSFET degradation and hot-electron-induced interface-state generation, IEEE Electron Device Letters, vol.5, issue.2, pp.50-52, 1984. ,
DOI : 10.1109/EDL.1984.25829
Richardson-Schottky Effect in Solids, Physical Review Letters, vol.15, issue.25, pp.967-968, 1965. ,
DOI : 10.1103/PhysRevLett.15.967
Critical analysis of the substrate hot-hole injection technique, Solid-State Electronics III, vol.371, issue.32, pp.3393-3399, 1994. ,
Silicon Processing for the VLSI Era -Volume III -The Submicron MOSFET, 1995. ,
Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude, IEEE Transactions on Electron Devices, vol.40, issue.2, pp.392-401, 1993. ,
DOI : 10.1109/16.182519
Design and characterization of the lightly doped drain-source (LDD) insulated gate field-effect transistor, IEEE Trans. Electron Devices, vol.1, issue.2, pp.27-1359, 1980. ,
Fabrication of high-performance LDDFET's with oxide sidewall-spacer technology, IEEE Trans. Electron Devices, vol.1, issue.2, pp.29-590, 1982. ,
Oxide reliability, IEEE International Reliability Physics Symposium, Tutorial Notes, 1997. ,
Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown, 1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98, p.47, 1998. ,
DOI : 10.1109/RELPHY.1998.670441
High field emission related thin oxide wearout and breakdown, Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94, p.143, 1994. ,
DOI : 10.1109/RELPHY.1994.307844
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown, IEEE Transactions on Electron Devices, vol.45, issue.4, p.904, 1998. ,
DOI : 10.1109/16.662800
Oxide reliability, IEEE International Reliability Physics Symposium, Tutorial Notes Topic 6a, pp.6-7, 1996. ,
Stress induced leakage currents in N-MOSFET's submitted to channel hot-carrier injections, Journal of Non-Crystalline Solids, vol.245, pp.1999-2040 ,
SILC -related effects in flash E2PROM's -part i : A quantitative model for steady state SILC, IEEE Trans. Electron Devices, vol.451, issue.83, p.1745, 1998. ,
Mechanism for stress???induced leakage currents in thin silicon dioxide films, Journal of Applied Physics, vol.78, issue.6, pp.3883-3894, 1995. ,
DOI : 10.1063/1.359905
Worst-case of the hot-carrier degradation between GO1-GO2 p-MOSFETs J203YB2 07A0 wafer, Rapport Interne STMicroelectronics, 2003. ,
Hole injection enhanced hotcarrier degradation in PMOSFETs used for System On Chip applications with 6.5-2nm thick gate-oxide, Microelectronic Reliability, pp.65-77 ,
Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs, Solid-State Electronics, vol.41, issue.9, pp.1293-1302, 1997. ,
DOI : 10.1016/S0038-1101(97)00074-9
Etudes des dégradations du transistor PMOS soumis aux injections de porteurs chauds, 1991. ,
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs, IEEE Transactions on Electron Devices, vol.35, issue.12, p.2194, 1988. ,
DOI : 10.1109/16.8794
Effects of hot carrier trapping in-and p-channel MOS- FET's, IEEE Trans. Electron Devices, vol.30, p.871, 1983. ,
Deep hole trapping effects in the degradation mechanisms of 6.5???2 nm thick gate-oxide PMOSFETs, Microelectronic Engineering, vol.72, issue.1-4, pp.106-11128, 2004. ,
DOI : 10.1016/j.mee.2003.12.025
Hot-carrier-induced degradation in p-channel LDD MOSFET's, IEEE Electron Device Letters, vol.7, issue.1, p.5, 1989. ,
DOI : 10.1109/EDL.1986.26273
Technique de détermination de la durée de vie des transistors MOSFET de longueur de grille ultra courte, Journées Nationales du réseau Doctoral de Micro-électronique, 2004. ,
Comparison of low leakage and high speed deep submicron PMOSFET's submitted to hole injection, IEEE International Reliabilty Workshop 02 III.57, pp.14-20, 2002. ,
An analytical effective channel-length modulation model for overshoot in submicron MOSFETs based on energy-balance formulation Microelectronic reliability, pp.1857-1864, 2002. ,
Investigation and reduction of hot electron induced punchthrough (HEIP) effect in submicron PMOSFETs, 1986 International Electron Devices Meeting, 1986. ,
DOI : 10.1109/IEDM.1986.191295
P-mosfet hot-carrier reliability in low leakage and high speed HCMOS9 technology, rapport confidentiel de ISEM-Lab pour ST- Microelectronics Crolles, 2002. ,
Interface state creation and charge trapping in the medium-to-high gate voltage range (vd/2 ? vg ? vd) during hotcarrier stressing of n-MOS transistors, EDL-37 III.3, III.3, pp.744-754, 1990. ,
A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's, IEEE Transactions on Electron Devices, vol.40, issue.4, p.773, 1993. ,
DOI : 10.1109/16.202790
Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures, Solid-State Electronics, vol.39, issue.4, pp.563-570, 1995. ,
DOI : 10.1016/0038-1101(95)00156-5
Analysis of interface properties in MOS transistors by means of charge pumping measurements, pp.244-253, 1974. ,
Charge pumping in MOS devices, IEEE Transactions on Electron Devices, vol.16, issue.3, pp.297-302, 1969. ,
DOI : 10.1109/T-ED.1969.16744
Comments on "The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors" [with reply], IEEE Transactions on Electron Devices, vol.39, issue.2, p.758, 1992. ,
DOI : 10.1109/16.121710
Hot-hole-induced negative oxide charges in n-MOSFETs, IEEE Trans. Electron Devices III, vol.423, issue.1, pp.1473-1480, 1995. ,
Recovery oh hot-carrier damage in reoxidized nitrured oxyde MOSFETs, IEEE Trans. Electron Devices III, vol.33, issue.12, pp.39-40, 1992. ,
Hot-carrier modeling and device degradation in surfacechannel p-MOSFET's, pp.1658-1666, 1990. ,
Dynamic channel hot carrier degradation in MOS transistors by enhanced-hole injection into oxide, IEEE Trans. Electron Devices, issue.1, p.237, 1987. ,
An empirical model for device degradation due to hot-carrier injection, IEEE Electron Device Letters, vol.4, issue.4, pp.111-113, 1983. ,
DOI : 10.1109/EDL.1983.25667
Submicron MOSFET structures for minimizing channel hot-electron injection, EDL-29, pp.612-618, 1982. ,
Lucky electron model of hot electron injections in MOS- FET's, IEEE Trans. Electron Devices, pp.31-1116, 1994. ,
Modeling weak avalanche multiplication in IGFETs and SOS transistor for CAD, IEDM ech Dig, p.31, 1975. ,
Hot-electroninduced mosfet degradation -model, monitor, and improvement, IV.1, pp.375-385, 1985. ,
On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs, IEEE Electron Device Letters, vol.10, issue.12, pp.553-555, 1989. ,
DOI : 10.1109/55.43137
Interface state creation and charge trapping in the medium-to-high gate voltage range (vd/2 ? vg ? vd) during hotcarrier stressing of n-MOS transistors, IEEE Trans. Electron Devices, pp.37-744, 1990. ,
Ac versus dc hot-carrier degradation in n-channel mosfet's, pp.66-104, 1993. ,
Hot-carrier-induced degradation in p-channel LDD MOSFET's, IV.1, 1989. ,
DOI : 10.1109/EDL.1986.26273
A model for the time-and biasdependance of p-MOSFET degradation, pp.392-401, 1984. ,
Three hot-carrier degradation mechanims in deep-submicron PMOSFET's, pp.392-401, 1995. ,
Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude, IEEE Transactions on Electron Devices, vol.40, issue.2, pp.40-392, 1993. ,
DOI : 10.1109/16.182519
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS, Applied Physics Letters, vol.9, issue.6, pp.242-244, 1966. ,
DOI : 10.1063/1.1754731
Critical anlaysis of the substrate hothole injection technique, Solid-State Electronics, vol.37, issue.3, pp.3393-3399, 1994. ,
Etudes des dégradations du transistor PMOS soumis aux injections de porteurs chauds, 1991. ,
Emission probability of hot electrons from silicon into silicon dioxide, Journal of Applied Physics, vol.48, issue.1, pp.286-293, 1977. ,
DOI : 10.1063/1.323374
Models and experiments on degradation of oxidized silicon, Solid State Electronics, vol.3, p.147, 1990. ,
Defect and impurities in ?-quartz and fuse Silica, dans The physics of Si-O 2 and its interfaces, 1978. ,
(4???6 nm)???Si interfaces during negative???bias temperature aging, Journal of Applied Physics, vol.77, issue.3, pp.1137-1148, 1995. ,
DOI : 10.1063/1.358977
New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing, IEEE International Integrated Reliability Workshop Final Report, 2004, pp.121-124, 2004. ,
DOI : 10.1109/IRWS.2004.1422753