A. O. Konstantinov, Emis Datareviews Series N° 13, INSPEC, p.170, 1995.

R. C. Glass, D. Henshall, V. F. Tovetkov, and C. H. Carter, SiC-Seeded Crystal Growth, MRS Bulletin, vol.375, issue.03, p.30, 1997.
DOI : 10.1557/S0883769400032735

W. Wesch, Silicon carbide: synthesis and processing, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.116, issue.1-4, pp.305-321, 1996.
DOI : 10.1016/0168-583X(96)00065-1

G. L. Harris, Properties of Silicon Carbide , INSPEC, Institution of Electrical Engineers, 1995.

R. Rurali, P. Godignon, J. Rebollo, E. Hernandez, and P. Ordejon, First-principles study of n-type dopants and their clustering in SiC, Applied Physics Letters, vol.82, issue.24, pp.4298-300, 2003.
DOI : 10.1063/1.1583870

D. J. Larkin, An Overview of SiC Epitaxial Growth, MRS Bulletin, vol.32, issue.03, p.36, 1997.
DOI : 10.1557/S0883769400032747

J. A. Freitas, Emis Datareviews Series N° 13, INSPEC, p.29, 1995.

J. C. Gauthier, G. Brinkmann, B. Copsey, and M. Lecomte, ANTARES: The HTR/VHTR project at Framatome ANP, 2nd International Topical Meeting on High Temperature Reactor Technology, 2004.
DOI : 10.1016/j.nucengdes.2005.10.030

A. Zywietz, J. Furthmuller, and F. Bechstedt, Physical-Review-B-Condensed-Matter, pp.15166-80, 1999.

L. Torpo, R. M. Nieminen, K. E. Laasonen, and S. Poykko, Applied-Physics-Letters, pp.221-224, 1999.

L. Torpo, T. Staab, M. Marlo, and R. M. Nieminen, study of properties of monovacancies and antisites in 4H-SiC, Journal of Physics: Condensed Matter, vol.13, issue.28, pp.6203-6231, 2001.
DOI : 10.1088/0953-8984/13/28/305

M. Bockstedte, A. Mattausch, and O. Pankratov, Physical-Review-B-Condensed-Matter-and-Materials-Physics, pp.205201-205202, 2003.

L. Torpo, T. E. Staab, and R. M. Nieminen, Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15 Feb, pp.85202-85203, 2002.

A. Mattausch, M. Bockstedte, and O. Pankratov, Physical-Review-B-Condensed-Matter-and-Materials-Physics, pp.235211-235212, 2004.

S. Arpiainen, K. Saarinen, P. Hautojarvi, L. Henry, M. F. Barthe et al., Physical-Review-B- Condensed-Matter-and-Materials-Physics, pp.75206-75207, 2002.

A. Polity, S. Huth, and M. Lausmann, Physical-Review-B-Condensed-Matter, pp.10603-10609, 1999.

L. Henry, M. F. Barthe, C. Corbel, P. Desgardin, G. Blondiaux et al., Physical- Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.115210-115211, 2003.

T. Friessnegg and S. Dannefaer, Defects-in-Electronic-Materials-II.-Symposium, pp.625-634, 1997.

M. G. Spencer, Emis Datareviews Series N° 13, INSPEC, p.93, 1995.

E. Balanzat and S. Bouffard, Materials under irradiation, Solid State Phenomena vols, pp.30-31, 1993.

P. Favennec, L'implantation ionique pour la microélectronique et l'optique, 1993.

W. Jiang, W. J. Weber, S. Thevuthasan, and D. E. Mccready, Nuclear-Instruments-&-Methods-in-Physics- Research,-Section-B-Beam-Interactions-with-Materials-and-Atoms, pp.1-4, 1999.

R. Devanathan and W. J. Weber, Journal-of-Nuclear-Materials, pp.258-65, 2000.

M. Bockstedte, M. Heid, and O. Pankratov, Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.193102-193103, 2003.

V. Y. Bratus, T. T. Petrenko, S. M. Okulov, and T. L. Petrenko, Physical-Review-B-Condensed-Matter-and- Materials-Physics. 15, pp.125202-125203, 2005.

H. Itoh, M. Yoshikawa, I. Nashiyama, S. Misawa, H. Okumura et al., Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons, Journal of Electronic Materials, vol.37, issue.7, pp.707-717, 1992.
DOI : 10.1007/BF02655600

B. Von, H. J. Cantin, J. L. Vickridge, I. Battistig, and G. , Physical-Review-B-Condensed-Matter, pp.10126-10160, 2000.

B. Von, H. J. Cantin, J. L. Henry, L. Barthe, and M. F. , Physical-Review-B-Condensed-Matter, pp.10841-10847, 2000.

T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzen et al., Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.193202-193203, 2005.

T. T. Petrenko, T. L. Petrenko, and V. Y. Bratus, Journal-of-Physics:-Condensed-Matter, pp.12433-12473, 2002.

N. T. Son, W. M. Chen, J. L. Lindstrom, B. Monemar, and E. Janzen, Materials-Science-&-Engineering-B- Solid-State-Materials-for-Advanced-Technology, pp.61-62, 1999.

P. G. Baranov, I. V. Ilyin, E. N. Mokhov, H. J. Von-bardeleben, and J. L. And-cantin, Physical-Review-B-Condensed- Matter-and-Materials-Physics, pp.165206-165207, 2002.

N. M. Pavlov, M. I. Iglitsyn, M. G. Kosaganova, and V. N. Solomatin, Fizika-i-Tekhnika-Poluprovodnikov, Soviet-Physics-Semiconductors, vol.9, issue.97, pp.845-854, 1975.

V. S. Vainer and V. A. Il-'in, Soviet-Physics-Solid-State Original: Fizika-Tverdogo- Tela, pp.2126-2159, 1981.

L. A. Balona and J. H. Loubser, Journal-of-Physics-C-Solid-State-Physics, Nov, vol.3, issue.11, pp.2344-51, 1970.

S. Dannefaer, D. Craigen, and D. Kerr, Physical-Review-B-Condensed-Matter. 15, pp.1928-1958, 1995.

S. Arpiainen, K. Saarinen, P. Hautojarvi, L. Henry, M. F. Barthe et al., Physical-Review-B- Condensed-Matter-and-Materials-Physics, pp.75206-75207, 2002.

M. O. Aboelfotoh and J. P. Doyle, silicon carbide, Physical Review B, vol.59, issue.16, pp.10823-10832, 1999.
DOI : 10.1103/PhysRevB.59.10823

Z. Zolnai, N. T. Son, C. Hallin, and E. Janzen, Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC, Journal of Applied Physics, vol.96, issue.4, pp.2406-2408, 2004.
DOI : 10.1063/1.1771472

T. Lingner, S. Greulich-weber, J. M. Spaeth, U. Gerstmann, E. Rauls et al., Physical-Review-B-Condensed-Matter-and-Materials-Physics, pp.245212-245213, 2001.

C. C. Ling, C. D. Beling, and S. Fung, -SiC with positron lifetime spectroscopy, Physical Review B, vol.62, issue.12, pp.8016-8038, 2000.
DOI : 10.1103/PhysRevB.62.8016
URL : https://hal.archives-ouvertes.fr/in2p3-00459276

P. A. Dirac, . Poc, and . Camb, On the Annihilation of Electrons and Protons, Mathematical Proceedings of the Cambridge Philosophical Society, vol.26, issue.03, p.361, 1930.
DOI : 10.1017/S0305004100016091

W. Brandt and R. Paulin, Positron implantation-profile effects in solids, Physical Review B, vol.15, issue.5, p.2511, 1997.
DOI : 10.1103/PhysRevB.15.2511

A. Uedono, H. Itoh, T. Ohshima, Y. Aoki, M. Yoshikawa et al., Defects in Ion-Implanted 3C???SiC Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics, vol.35, issue.Part 1, No. 12A, p.5986, 1996.
DOI : 10.1143/JJAP.35.5986

J. C. Bodineau, Mémoire d'ingénieur CNAM, 1992.

K. G. Lynn, International School of Physics "Enrico Fermi, p.609, 1983.

P. Hautojärvi, J. Mäkinen, S. Palko, K. Saarinen, and C. Corbel, Point defects in III???V materials grown by molecular beam epitaxy at low temperature, Materials Science and Engineering: B, vol.22, issue.1, p.16, 1993.
DOI : 10.1016/0921-5107(93)90216-A

P. J. Schulz and K. G. Et-lynn, Interaction of positron beams with surfaces, thin films, and interfaces, Reviews of Modern Physics, vol.60, issue.3, p.701, 1988.
DOI : 10.1103/RevModPhys.60.701

R. N. West, Positrons in solids (Topics in current Phys, 12) Edité par Hautojärvi P, p.89, 1979.

M. Puska, C. Corbel, and R. M. Nieminen, Positron trapping in semiconductors, Physical Review B, vol.41, issue.14, p.9980, 1990.
DOI : 10.1103/PhysRevB.41.9980

R. Krause-rehberg and H. S. Leipner, Positron studies of semiconductors, 1999.

C. Corbel, M. Stucky, P. Hautojärvi, and P. Moser, Positron-annihilation spectroscopy of native vacancies in as-grown GaAs, Physical Review B, vol.38, issue.12, p.8192, 1988.
DOI : 10.1103/PhysRevB.38.8192

K. Saarinen, P. Hautojärvi, J. Keinsnen, E. Rauhala, J. Raïsänen et al., Defect structure and recovery in hydrogen-implanted semi-insulating GaAs, Physical Review B, vol.43, issue.5, p.4249, 1991.
DOI : 10.1103/PhysRevB.43.4249

G. Brauer, W. Anwand, P. G. Coleman, A. P. Knights, E. Plazaola et al., Positron studies of defects in ion-implanted SiC, Physical Review B, vol.54, issue.5, p.3084, 1996.
DOI : 10.1103/PhysRevB.54.3084

T. E. Staab, L. M. Torpo, M. J. Puska, and R. M. Nieminen, Materials Science Forum Vols, pp.353-356533, 2001.

L. Henry, M. F. Barthe, C. Corbel, P. Desgardin, G. Blondiaux et al., Physical- Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.115210-115211, 2003.

G. Brauer, W. Anwand, E. M. Nicht, P. G. Coleman, N. Wagner et al., Applied- Surface-Science, pp.19-22, 1997.

A. Polity, S. Huth, and M. Lausmann, Physical-Review-B-Condensed-Matter, pp.10603-10609, 1999.

S. Dannefaer, D. Craigen, and D. Kerr, Physical-Review-B-Condensed-Matter. 15, pp.1928-1958, 1995.

D. T. Britton, M. F. Barthe, C. Corbel, A. Hempel, L. Henry et al., Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation, Applied Physics Letters, vol.78, issue.9, pp.1234-1240, 2001.
DOI : 10.1063/1.1350961

L. Henry, M. F. Barthe, C. Corbel, P. Desgardin, G. Blondiaux et al., Physical- Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.115210-115211, 2003.

R. Devanathan and W. J. Weber, Journal-of-Nuclear-Materials, pp.258-65, 2000.

B. Von, H. J. Cantin, J. L. Henry, L. Barthe, and M. F. , Physical-Review-B-Condensed-Matter, pp.10841-10847, 2000.

S. Dannefaer, D. Craigen, and D. Kerr, Physical-Review-B-Condensed-Matter. 15, pp.1928-1958, 1995.

A. Zywietz, J. Furthmuller, and F. Bechstedt, Physical-Review-B-Condensed-Matter, pp.15166-80, 1999.

A. Polity, S. Huth, and M. Lausmann, Physical-Review-B-Condensed-Matter, pp.10603-10609, 1999.

S. Bouffard, J. Dural, F. Levesque, and J. M. And-ramillon, Annales-de-Physique, pp.395-402, 1989.

R. Devanathan and W. J. Weber, Journal-of-Nuclear-Materials, pp.258-65, 2000.

L. Henry, M. F. Barthe, C. Corbel, P. Desgardin, G. Blondiaux et al., Physical- Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.115210-115211, 2003.

B. Von, H. J. Cantin, J. L. Vickridge, I. Battistig, and G. , Physical-Review-B-Condensed-Matter, pp.10126-10160, 2000.

A. Polity, S. Huth, and M. Lausmann, Physical-Review-B-Condensed-Matter, pp.10603-10609, 1999.

S. Arpiainen, K. Saarinen, P. Hautojarvi, L. Henry, M. F. Barthe et al., Physical-Review-B- Condensed-Matter-and-Materials-Physics, pp.75206-75207, 2002.

F. Gao and W. J. Weber, Recovery of close Frenkel pairs produced by low energy recoils in SiC, Journal of Applied Physics, vol.94, issue.7, p.4348, 2003.
DOI : 10.1063/1.1605254

L. Henry, M. F. Barthe, C. Corbel, P. Desgardin, G. Blondiaux et al., Physical- Review-B-Condensed-Matter-and-Materials-Physics. 15, pp.115210-115211, 2003.

B. Von, H. J. Cantin, J. L. Vickridge, I. Battistig, and G. , Physical-Review-B-Condensed-Matter, pp.10126-10160, 2000.

N. T. Son, W. M. Chen, J. L. Lindstrom, B. Monemar, and E. Janzen, Materials-Science-&-Engineering-B- Solid-State-Materials-for-Advanced-Technology, pp.61-62, 1999.

T. T. Petrenko, T. L. Petrenko, and V. Y. Bratus, Journal-of-Physics:-Condensed-Matter, pp.12433-12473, 2002.

B. Von, H. J. , and J. L. , Cantin: Nuclear-Instruments-&-Methods-in-Physics-Research,-Section-B-Beam- Interactions-with-Materials-and-Atoms, pp.201-206, 2002.

A. Polity, S. Huth, and M. Lausmann, Physical-Review-B-Condensed-Matter, pp.10603-10609, 1999.

A. A. Rempel and H. E. Schaefer, Irradiation-induced atomic defects in SiC studied by positron annihilation, Applied Physics A Materials Science & Processing, vol.30, issue.87, pp.51-54, 1995.
DOI : 10.1007/BF01538210

T. Lingner, S. Greulich-weber, J. M. Spaeth, U. Gerstmann, E. Rauls et al., Physical-Review-B-Condensed-Matter-and-Materials-Physics, pp.245212-245213, 2001.

F. Salvat, J. D. Martinez, R. Mayol, and J. Parellada, Analytical Dirac-Hartree-Fock-Slater screening function for atoms (Z=1???92), Physical Review A, vol.36, issue.2, p.467, 1987.
DOI : 10.1103/PhysRevA.36.467
URL : http://diposit.ub.edu/dspace/bitstream/2445/9406/1/10294.pdf

E. Zeitler and H. Olsen, Screening Effects in Elastic Electron Scattering, Physical Review, vol.136, issue.6A, p.1546, 1964.
DOI : 10.1103/PhysRev.136.A1546

D. Lesueur, J. Morillo, H. Mutka, A. Audouard, and J. C. Rousset, , homogeneous intermediate valence compound SmS, Radiation Effects, vol.45, issue.1-2, p.125, 1983.
DOI : 10.1051/jphyslet:019790040010500

W. A. Mckinley and H. Feshbach, The Coulomb Scattering of Relativistic Electrons by Nuclei, Physical Review, vol.74, issue.12, p.1759, 1948.
DOI : 10.1103/PhysRev.74.1759

D. Lesueur, Cascades de d??placement dam les solides polyatomiques, Philosophical Magazine A, vol.41, issue.14, p.905, 1981.
DOI : 10.1080/01418618108239557