First-principles study of He in Si, Physical Review B, vol.46, issue.19, p.12806, 1992. ,
DOI : 10.1103/PhysRevB.46.12806
Semiempirical modified embedded-atom potentials for silicon and germanium, Physical Review B, vol.40, issue.9, p.6085, 1989. ,
DOI : 10.1103/PhysRevB.40.6085
Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line, Physical Review B, vol.55, issue.8, p.5037, 1997. ,
DOI : 10.1103/PhysRevB.55.5037
Monte-Carlo program MODEX: Simulation of point defect clustering during irradiation and subsequent annealing, Computational Materials Science, vol.9, issue.3-4, p.309, 1998. ,
DOI : 10.1016/S0927-0256(97)00155-9