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Theses

ÉLABORATION ET CARACTERISATION DE FILMS MINCES
D'OXYDE D'INDIUM DOPE A L'ETAIN OBTENUS PAR VOIE SOL-GEL
Potentialité pour la réalisation d'électrodes sur silicium poreux

Abstract : Tin doped indium oxide thin films present a good transparency in the visible range and
important electrical conductivity. In this work we present a study of the performances of
multilayered thin films of ITO obtained through the sol-gel route.
Using transmission electron microscopy (TEM) study, we demonstrate the complexity
of the morphology and structure of such stacked layers. TEM and Rutherford Backscattering
Spectrometry study evidences the correlation between density, crusts at interfaces and
resulting electrical conductivity.
This work renders valid the rapid thermal annealing process for densification and
crystallisation of sol-gel films in comparison with classical thermal process.
We demonstrate the potentiality of the sol-gel route to obtain transparent electrode on
porous silicon (PS). ITO/PS structure with partly photoluminescence preserved has been
studied in term of Schottky diodes.
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https://tel.archives-ouvertes.fr/tel-00103297
Contributor : Kais Daoudi <>
Submitted on : Wednesday, October 4, 2006 - 4:41:26 AM
Last modification on : Thursday, October 15, 2020 - 9:00:03 AM
Long-term archiving on: : Tuesday, April 6, 2010 - 5:56:12 PM

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Kais Daoudi. ÉLABORATION ET CARACTERISATION DE FILMS MINCES
D'OXYDE D'INDIUM DOPE A L'ETAIN OBTENUS PAR VOIE SOL-GEL
Potentialité pour la réalisation d'électrodes sur silicium poreux. Matière Condensée [cond-mat]. Université Claude Bernard - Lyon I, 2003. Français. ⟨tel-00103297⟩

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