Cramming More Components Onto Integrated Circuits, www.itrs.net/Common, 1965. ,
DOI : 10.1109/JPROC.1998.658762
Modification of hydrogen???passivated silicon by a scanning tunneling microscope operating in air, Applied Physics Letters, vol.56, issue.20 ,
DOI : 10.1063/1.102999
Fabrication of nanometer???scale side???gated silicon field effect transistors with an atomic force microscope, Applied Physics Letters, vol.66, issue.11, pp.1388-90, 1995. ,
DOI : 10.1063/1.113210
Nanometer scale lithography of silicon(100) surfaces using tapping mode atomic force microscopy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.3 ,
DOI : 10.1116/1.580268
Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique, Applied Physics Letters, vol.74, issue.26, pp.4049-51, 1999. ,
DOI : 10.1063/1.123257
Observation of single-electron charging effects in small tunnel junctions, Physical Review Letters, vol.59, issue.1, pp.109-121, 1987. ,
DOI : 10.1103/PhysRevLett.59.109
Shell Filling and Spin Effects in a Few Electron Quantum Dot, Physical Review Letters, vol.77, issue.17, pp.3613-3629, 1996. ,
DOI : 10.1103/PhysRevLett.77.3613
Coulomb blockade, single-electron transistors and circuits in silicon, Physica E: Low-dimensional Systems and Nanostructures, vol.17 ,
DOI : 10.1016/S1386-9477(02)00874-3
Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire, Journal of Applied Physics, vol.81, issue.6, pp.2699-703, 1997. ,
DOI : 10.1063/1.363934
Single-electron effects in heavily doped polycrystalline silicon nanowires, Applied Physics Letters, vol.73, issue.8, pp.1113-1128, 1998. ,
DOI : 10.1063/1.122101
URL : http://spiral.imperial.ac.uk/bitstream/10044/1/13755/2/Durrani_Irvine%20et%20al%2c%20Single-electron%20effects%20in%20heavily%20doped%20polycrystalline%20silicon%20nanowires.pdf
Si complementary single-electron inverter with voltage gain, Applied Physics Letters, vol.76, issue.21, pp.3121-3124, 2000. ,
DOI : 10.1063/1.126543
Logic circuit elements using single-electron tunnelling transistors, Electronics Letters, vol.35, issue.21, pp.1883-1887, 1999. ,
DOI : 10.1049/el:19991231
A high-speed silicon single-electron random access memory, IEEE Electron Device Letters, vol.20, issue.11, pp.583-588, 1999. ,
DOI : 10.1109/55.798051
Manipulation and detection of single electrons for future information processing, Journal of Applied Physics, vol.97, issue.3, pp.31101-31112, 2005. ,
DOI : 10.1063/1.1843271
Single-electron devices and their applications, Proceedings of the IEEE, vol.87, issue.4, pp.606-638, 1999. ,
DOI : 10.1109/5.752518
Fabrication and transport characterization of a primary thermometer formed by Coulomb islands in a suspended silicon nanowire, Applied Physics Letters, vol.82, issue.21 ,
DOI : 10.1063/1.1578184
High Inversion Current in Silicon Nanowire Field Effect Transistors, Nano Letters, vol.4, issue.11, pp.2197-201, 2004. ,
DOI : 10.1021/nl0486517
Silicon nanowires as chemical sensors, Chemical Physics Letters, vol.369, issue.1-2, pp.220-224, 2003. ,
DOI : 10.1016/S0009-2614(02)02008-0
Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species, Science, vol.293, pp.1289-92, 2001. ,
Electron beam lithography: resolution limits and applications, Applied Surface Science, vol.164, issue.1-4, pp.111-118, 2000. ,
DOI : 10.1016/S0169-4332(00)00352-4
Self-Assembly at All Scales, Science, vol.295, issue.5564, pp.2418-2439, 2002. ,
DOI : 10.1126/science.1070821
Doping and electrical transport in silicon nanowires, J. Phys. Chem. B, vol.104, pp.5213-5229, 2000. ,
Tunneling through a controllable vacuum gap, Applied Physics Letters, vol.40, issue.2, pp.178-80, 1982. ,
DOI : 10.1063/1.92999
Atomic Force Microscope, Physical Review Letters, vol.56, issue.9, pp.930-933, 1986. ,
DOI : 10.1103/PhysRevLett.56.930
Scanning Probe Microscopy Training Notebook version 3, 2000. ,
Nanofabrication by scanning probe microscope lithography: A review, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.23, issue.3, pp.877-94, 2005. ,
DOI : 10.1116/1.1926293
Lift-off metallization using poly(methyl methacrylate) exposed with a scanning tunneling microscope, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.6, issue.1, pp.293-299, 1988. ,
DOI : 10.1116/1.583981
Noncontact nanolithography using the atomic force microscope, Applied Physics Letters, vol.73, issue.17, pp.2527-2536, 1998. ,
DOI : 10.1063/1.122504
Characteristics of scanning-probe lithography with a current-controlled exposure system, Applied Physics Letters, vol.72, issue.13, pp.1581-1584, 1998. ,
DOI : 10.1063/1.121121
Application of scanning tunneling microscopy nanofabrication process to single electron transistor, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.2, pp.1331-1336, 1996. ,
DOI : 10.1116/1.589091
Single???atom point contact devices fabricated with an atomic force microscope, Applied Physics Letters, vol.69, issue.2, pp.269-71, 1996. ,
DOI : 10.1063/1.117946
Fabrication of nanometer???scale side???gated silicon field effect transistors with an atomic force microscope, Applied Physics Letters, vol.66, issue.11, pp.1388-90, 1995. ,
DOI : 10.1063/1.113210
Voltage modulation scanned probe oxidation, Applied Physics Letters, vol.75, issue.2, pp.199-201, 1999. ,
DOI : 10.1063/1.124318
Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges, Journal of Applied Physics, vol.86, issue.4, pp.1898-903, 1999. ,
DOI : 10.1063/1.370985
Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.16, issue.6 ,
DOI : 10.1116/1.590325
InP patterning using contact mode and non-contact AFM lithography for quantum dot localization, Superlattices and Microstructures, vol.36, issue.1-3, pp.325-358, 2004. ,
DOI : 10.1016/j.spmi.2004.08.011
Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system, Applied Physics Letters, vol.76, issue.4, pp.457-466, 2000. ,
DOI : 10.1063/1.125786
Direct writing of nanostructures from silane on silicon (111), Direct writing of nanostructures from silane on silicon, pp.786-794, 1995. ,
DOI : 10.1063/1.115467
Josephson junctions defined by a nanoplough, Applied Physics Letters, vol.73, issue.14, pp.2051-2054, 1998. ,
DOI : 10.1063/1.122364
Haug et al. Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip ,
Lift???off lithography using an atomic force microscope, Applied Physics Letters, vol.69, issue.20 ,
DOI : 10.1063/1.117317
Positioning single atoms with a scanning tunnelling microscope, Nature, vol.344, issue.6266, pp.524-530, 1990. ,
DOI : 10.1038/344524a0
"Dip-Pen" Nanolithography, Science, vol.16, issue.5402, pp.661-664, 1999. ,
DOI : 10.1039/a827001z
The ???Millipede??????More than thousand tips for future AFM storage, IBM Journal of Research and Development, vol.44, issue.3, pp.323-363, 2000. ,
DOI : 10.1147/rd.443.0323
Etude prospective sur les dispositifs silicium a blocage de Coulomb dans la prespective d'application à la microélectronique, 2000. ,
Fabrication of Si nanostructures with an atomic force microscope, Applied Physics Letters, vol.64, issue.15, pp.1932-1936, 1994. ,
DOI : 10.1063/1.111746
Nanometer scale patterning of silicon (100) surfaces by an atomic force microscope operating in air, Applied Physics Letters, vol.64, issue.16, pp.2133-2138, 1994. ,
DOI : 10.1063/1.111707
Nanometer???structure writing on Si(100) surfaces using a non???contact???mode atomic force microscope, Applied Physics Letters, vol.65, issue.11, pp.1415-1422, 1994. ,
DOI : 10.1063/1.112068
Direct visualization of the dynamic behavior of a water meniscus by scanning electron microscopy, Journal of Applied Physics, vol.84, issue.9, pp.4880-4884, 1998. ,
DOI : 10.1063/1.368731
Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation, Applied Physics Letters, vol.70, issue.24, pp.3272-3276, 1997. ,
DOI : 10.1063/1.118425
Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication, Applied Physics Letters, vol.71, issue.2, pp.285-292, 1997. ,
DOI : 10.1063/1.119521
Role of space charge in scanned probe oxidation, Journal of Applied Physics, vol.84, issue.12, pp.6891-900, 1998. ,
DOI : 10.1063/1.368986
Density variations in scanned probe oxidation, Applied Surface Science, vol.158, issue.3-4, pp.205-221, 2000. ,
DOI : 10.1016/S0169-4332(00)00017-9
on Si, Nanotechnology, vol.12, issue.2, pp.110-112, 2001. ,
DOI : 10.1088/0957-4484/12/2/307
Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope, Physica C: Superconductivity, vol.368, issue.1-4, pp.211-228, 2002. ,
DOI : 10.1016/S0921-4534(01)01168-6
URL : https://hal.archives-ouvertes.fr/hal-00081868
Anisotropic etching of silicon in TMAH solutions, Sensors and Actuators A: Physical, vol.34, issue.1, pp.51-58, 1992. ,
DOI : 10.1016/0924-4247(92)80139-T
Nanocircuits en silicium sur isolant élaborés par microscopie à force atomique ,
Field Effect Devices and Applications, 1998. ,
Physique des semiconducteurs et des composants électroniques. 2e édition révisée, 1990. ,
Architectures innovantes pour les transistors SOI. INP Grenoble, soutenance, 2005. ,
Transistor MOS et sa technologie de fabrication ,
Etude prospective sur les dispositifs silicium a blocage de Coulomb dans la prespective d'application à la microélectronique, 2000. ,
Nanocircuits en silicium sur isolant élaborés par microscopie à force atomique ,
Si film characterisation in SOI substrates by the HgFET technique. Soild States Electron, pp.1311-1333, 2003. ,
Characterization of silicon surface preparation processes for advanced gate dielectrics, IBM Journal of Research and Development, vol.43, issue.3, pp.351-65, 1999. ,
DOI : 10.1147/rd.433.0351
High performance silicon nanowire field effect transistors, Nano Lett, vol.3, pp.149-52, 2003. ,
Density variations in scanned probe oxidation, Applied Surface Science, vol.158, issue.3-4 ,
DOI : 10.1016/S0169-4332(00)00017-9
High Performance Electrolyte Gated Carbon Nanotube Transistors, Nano Letters, vol.2, issue.8, pp.869-72, 2002. ,
DOI : 10.1021/nl025639a
Gate-Defined Quantum Dots on Carbon Nanotubes, Nano Letters, vol.5, issue.7, pp.1267-71, 2005. ,
DOI : 10.1021/nl050364v
Manuel de thermique : théorie et pratique, 2000. ,
Current-induced structural modification of silicon-on-insulator nanocircuits, Applied Physics Letters, vol.82, issue.11, pp.1727-1736, 2003. ,
DOI : 10.1063/1.1561573
Low Temperature Electronics: Physics, Devices, Circuits and Applications, 1996. ,
Loss of dimensionality, localisation and conductance oscillations in N-type GaAs FET's, Physica B+C, vol.117, issue.118, pp.117-118, 1983. ,
DOI : 10.1016/0378-4363(83)90627-7
Physique des semiconducteurs et des composants électroniques. 2e édition révisée, 1990. ,
Electronic Properties of Doped Semiconductors, 1984. ,
DOI : 10.1007/978-3-662-02403-4
Metal-Insulator Transitions. London: Taylor&Francis, 1974. ,
Variable-Range Hopping in Finite One-Dimensional Wires, Physical Review Letters, vol.53, issue.21, pp.2042-2047, 1984. ,
DOI : 10.1103/PhysRevLett.53.2042
Conduction in amorphous materials, Electron. Power, vol.19, p.321, 1973. ,
Conductance fluctuations near the localized-to-extended transition in narrow Si metal-oxide-semiconductor field-effect transistors, Physical Review B, vol.36, issue.15, pp.8015-8046, 1987. ,
DOI : 10.1103/PhysRevB.36.8015
Conductance in Restricted-Dimensionality Accumulation Layers, Physical Review Letters, vol.48, issue.3, pp.196-205, 1982. ,
DOI : 10.1103/PhysRevLett.48.196
URL : http://scholarcommons.sc.edu/cgi/viewcontent.cgi?article=1086&context=phys_facpub
Electronic transport in small strongly localized structures, IBM Journal of Research and Development, vol.32, issue.3, pp.372-83, 1988. ,
DOI : 10.1147/rd.323.0372
Théorie du blocage de Coulomb appliquée aux nanostructures semi-conductrices : modélisation des nanodispositifs à nanocristaux de silicium, 2003. ,
The isolation of an ion, a precision measurement of its charge and the correction of Stokes's law, Phys. Rev, vol.32, p.349, 1911. ,
On the Elementary Electrical Charge and the Avogadro Constant, Physical Review, vol.2, issue.2 ,
DOI : 10.1103/PhysRev.2.109
Single-electron devices and their applications, Proceedings of the IEEE, vol.87, issue.4, pp.606-638, 1999. ,
DOI : 10.1109/5.752518
Observation of single-electron charging effects in small tunnel junctions, Physical Review Letters, vol.59, issue.1, pp.109-121, 1987. ,
DOI : 10.1103/PhysRevLett.59.109
Effet de champ et électronique à un électron dans des nanotubes de carbone auto-assemblés par CVD assisté d'un filament chaud, 2004. ,
Shell Filling and Spin Effects in a Few Electron Quantum Dot, Physical Review Letters, vol.77, issue.17, pp.3613-3629, 1996. ,
DOI : 10.1103/PhysRevLett.77.3613
Zero-dimensional states and single electron charging in quantum dots ,
Excitation spectra of circular, few-electron quantum dots, Science, vol.278, pp.1788-92, 1997. ,
Theory of Coulomb-blockade oscillations in the conductance of a quantum dot, Physical Review B, vol.44, issue.4, pp.1646-56, 1991. ,
DOI : 10.1103/PhysRevB.44.1646
Transport through a strongly interacting electron system: Theory of periodic conductance oscillations, Physical Review Letters, vol.66, issue.23, pp.3048-51, 1991. ,
DOI : 10.1103/PhysRevLett.66.3048
Coulomb-blockade oscillations in disordered quantum wires, Physical Review B, vol.45, issue.16, pp.9222-9258, 1992. ,
DOI : 10.1103/PhysRevB.45.9222
One-dimensional electron gas in ,
Coulomb gap and low temperature conductivity of disordered systems, Journal of Physics C: Solid State Physics, vol.8, issue.4, pp.49-51, 1975. ,
DOI : 10.1088/0022-3719/8/4/003
Single-electron charging effects in insulating wires, Physical Review Letters, vol.67, issue.20, pp.2862-2867, 1991. ,
DOI : 10.1103/PhysRevLett.67.2862
Observation of conductance fluctuations in large ,
Coulomb gap, Coulomb blockade, and dynamic activation energy in frustrated single-electron arrays, Physical Review B, vol.68, issue.4, pp.45321-45322, 2003. ,
DOI : 10.1103/PhysRevB.68.045321
URL : http://arxiv.org/abs/cond-mat/0303439
Electronic properties of two-dimensional systems, Reviews of Modern Physics, vol.54, issue.2 ,
DOI : 10.1103/RevModPhys.54.437
Metal-insulator transition in Si: As, Physical Review B, vol.28, issue.2, pp.638-678, 1983. ,
DOI : 10.1103/PhysRevB.28.638
Nanocircuits en silicium sur isolant élaborés par microscopie à force atomique, 2003. ,
Electron transport in silicon nanostructures based on ultra-thin SOI, Journal de Physique IV (Proceedings), vol.12, issue.3, p.97, 2002. ,
DOI : 10.1051/jp420020044
The observation of interaction and localisation effects in a two-dimensional electron gas at low temperatures, Journal of Physics C: Solid State Physics, vol.13, issue.33, pp.985-93, 1980. ,
DOI : 10.1088/0022-3719/13/33/005
Mesoscopic transport phenomena in ultrashort channel MOSFETs, Solid-State Electronics, vol.43, issue.7, pp.1245-50, 1999. ,
DOI : 10.1016/S0038-1101(99)00060-X
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.574.9946
Single-electron charging in nanocrystalline silicon point-contacts, Microelectronic Engineering, vol.63, issue.1-3, pp.267-75, 2002. ,
DOI : 10.1016/S0167-9317(02)00602-0
Doped silicon single electron transistors with single island characteristics, Applied Physics Letters, vol.76, issue.15, pp.2065-2072, 2000. ,
DOI : 10.1063/1.126256
Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire, Journal of Applied Physics, vol.81, issue.6, pp.2699-703, 1997. ,
DOI : 10.1063/1.363934
Coulomb-blockade-structures in poly-crystalline silicon, Microelectronic Engineering, vol.57, issue.58, pp.989-93, 2001. ,
DOI : 10.1016/S0167-9317(01)00429-4
Single-electron effects in heavily doped polycrystalline silicon nanowires, Applied Physics Letters, vol.73, issue.8, pp.1113-1128, 1998. ,
DOI : 10.1063/1.122101
Room temperature nanocrystalline silicon single-electron transistors, Journal of Applied Physics, vol.94, issue.1, pp.633-640, 2003. ,
DOI : 10.1063/1.1569994
URL : http://spiral.imperial.ac.uk/bitstream/10044/1/13743/2/Durrani_Tan%20et%20al%2c%20Room%20temperature%20nanocrystalline%20silicon%20single-electron%20transistors.pdf
Coulomb Blockade without Tunnel Junctions, Physical Review Letters, vol.82, issue.6, pp.1245-1253, 1999. ,
DOI : 10.1103/PhysRevLett.82.1245
Coulomb blockade in quasimetallic silicon-on-insulator nanowires, Applied Physics Letters, vol.75, issue.23, pp.3704-3710, 1999. ,
DOI : 10.1063/1.125435
Disorder, Pseudospins, and Backscattering in Carbon Nanotubes, Physical Review Letters, vol.83, issue.24, pp.5098-101, 1999. ,
DOI : 10.1103/PhysRevLett.83.5098
Electron transport through double quantum dots, Rev. Mod. Phys, vol.75, pp.1-22, 2003. ,
Resonant tunneling through two discrete energy states, Phys. Rev. Lett, vol.74, pp.4702-4707, 1995. ,
Stochastic Coulomb blockade in a double-dot system, Physical Review B, vol.45, issue.23, pp.13469-78, 1992. ,
DOI : 10.1103/PhysRevB.45.13469
Variable-Range Hopping in Finite One-Dimensional Wires, Physical Review Letters, vol.53, issue.21, pp.2042-2047, 1984. ,
DOI : 10.1103/PhysRevLett.53.2042
Measuring interactions between tunnel-coupled quantum dots, Physical Review B, vol.53, issue.3, pp.1413-1433, 1996. ,
DOI : 10.1103/PhysRevB.53.1413
Coulomb-blockade oscillations in disordered quantum wires, Physical Review B, vol.45, issue.16, pp.9222-9258, 1992. ,
DOI : 10.1103/PhysRevB.45.9222
Collective transport in arrays of small metallic dots, Physical Review Letters, vol.71, issue.19 ,
DOI : 10.1103/PhysRevLett.71.3198
Coulomb gap, Coulomb blockade, and dynamic activation energy in frustrated single-electron arrays, Physical Review B, vol.68, issue.4, pp.45321-45322, 2003. ,
DOI : 10.1103/PhysRevB.68.045321
Electronic Transport in Metal Nanocrystal Arrays: The Effect of Structural Disorder on Scaling Behavior, Physical Review Letters, vol.87, issue.18, pp.1-4, 2001. ,
DOI : 10.1103/PhysRevLett.87.186807
Electronic transport in quasi-one-dimensional arrays of gold nanocrystals, Physical Review B, vol.71, issue.20, pp.205412-205413, 2005. ,
DOI : 10.1103/PhysRevB.71.205412
Temperature evolution of multiple tunnel junction devices made with disordered two-dimensional arrays of metallic islands, Applied Physics Letters, vol.74, issue.20, pp.3047-3056, 1999. ,
DOI : 10.1063/1.124060
Spin-Dependent Tunneling in Self-Assembled Cobalt-Nanocrystal Superlattices, Science, vol.290, issue.5494, pp.1131-1135, 2000. ,
DOI : 10.1126/science.290.5494.1131