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Contribution à l'étude de l'épitaxie par jets moléculaires à grande échelle de semi-conducteurs phosphorés

Abstract : The increase of the components frequencies strengthens the interest for phosphorus containing semiconductors. The development of phosphorus solid sources with valve and cracker enables to consider industrial prospects for Molecular Beam Epitaxy (MBE), which is competed by chemical vapour deposition. It is the objective of the joint laboratory “P-Taxy” between Riber and IEMN, in which this work has been prepared.
Several aspects of MBE of phosphides have been studied in a large volume reactor. Phosphide on arsenide interfaces have been characterized by the mean of an interface sensitive HEMT structure. Electrical properties are comparable to those measured on structures realized in a research MBE system. Arsenic memory effect is low, and good quality interfaces are achieved for short or even no growth interruption. Heavily “p” doped InGaAs layers, crucial point for Heterojunction Bipolar Transistors, have been grown by the means of a CBr4 source. Carbon diffusion is low and p-n junction is nearly ideal.
MBE cell fluxes have been modeled by Monte-Carlo method. Conical cells lead to a good uniformity with variations less than +/- 1% across the platen but suffer from a strong flux decrease when the cell empties. Cylindrical cells with a conical insert enable to achieve good intensity stability but flux becomes more directive when the filling decreases.
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Contributor : Sébastien Dhellemmes <>
Submitted on : Tuesday, September 12, 2006 - 3:42:20 PM
Last modification on : Wednesday, February 17, 2021 - 10:58:10 AM
Long-term archiving on: : Monday, September 20, 2010 - 4:56:25 PM

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  • HAL Id : tel-00087202, version 2

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Sébastien Dhellemmes. Contribution à l'étude de l'épitaxie par jets moléculaires à grande échelle de semi-conducteurs phosphorés. Matière Condensée [cond-mat]. Université des Sciences et Technologie de Lille - Lille I, 2006. Français. ⟨tel-00087202v2⟩

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